光纤荧光传感器衰减寿命的加权对数拟合法

荧光寿命的检测是荧光光学传感器的核心内容，国际上尝试了多种方法来拟合这种理论上为单指数衰减信号的荧光衰减曲线。这些方法包括非线性函数标准拟合方法。即Levenburg-Marquardt方法，以及Prony方法、FFT方法，对数拟合法等等。为了克服在实际应用中发生的信号退化，需要在测量信号衰减寿命的同时测量信号的初始强度。文章介绍了一种加权的对数拟合法，经计算机仿真及实际数据测试均可以得到和Levenburg-Marquardt方法非常接近的结果，且拟合时间大大缩短，测量稳定性大大提高。仿真测试及具体实验测试结果显示了这种方法的有效性。该方法不仅与Levenburg-Marquardt方法的偏差曲线非常相似，而且实验测得的荧光寿命与Levenburg-Marquardt方法偏差在0．2％以内。     

GPRS业务模型和无线网络的研究

根据GPRS业务及业务发展情况，对GPRS业务模型进行深入研究，并对GPRS无线网络进行了更深入的探讨。     

组合DEA方法与成熟度模型对项目效益的评价

为全面考虑资金、管理决策能力等因素对项目效益的影响，本运用数据包络分析与项目成熟度模型结合的方法来对企业各个项目之间的相对效益进行评价，应用结果表明该评价方法对于企业资源的最优配置、提高总体效益是十分有用的。     

CNx纳米管的制备、结构观察及低场致电子发射性能研究

采用高温热解法，以乙二胺为前驱液，在沉积有铁催化剂的p型硅（111）基底上制备出了定向生长的CNx纳米管.利用扫描电子显微镜、高分辨率透射电子显微镜和拉曼光谱对CNx纳米管进行了形貌观察和表征.CNx纳米管的高度在20?μm左右，直径在50—100nm之间，具有明显的“竹节状”结构，结晶有序度较差.对CNx纳米管薄膜进行低场致发射性能测试：外加电场为1.4V/μm，观察到20?μA /cm2发射电流，外电场升至2.54V/μm时发射电流达到1.280mA/cm2，在较高外电场下，没有发现电流“饱和”.这比 关键词： CNx纳米管 高温热解 “竹节状”结构 场致发射     

激光诱导间质肿瘤热疗的数值模拟和实验研究

本文在考虑生物组织物性动态变化的情况下建立了激光诱导间质肿瘤热疗(LITT)的物理数学模型,采用MonteCarlo方法数值模拟了LITT中激光能量在生物组织内的传输过程,基于Pennes生物传热方程和Arrhenius方程数值求解了组织内的温度分布和热损伤体积的变化,分析了热物性及血液灌注率的动态变化对LITT过程的影响,并与相应的离体实验结果进行了对比。数值模拟结果表明,组织的热物性及血液灌注率的动态变化对于热损伤体积的变化具有重要的影响。因此在激光诱导间质肿瘤热疗的数值模拟中应该考虑热物性及血液灌注率的动态变化以期为临床治疗方案的制定提供更为准确的依据。     

Estimating and eliminating redundant data transfers over the web: a fragment based approach

Redundant data transfers over the Web, can be mainly attributed to the repeated transfers of unchanged data. Web caches and Web proxies are some of the solutions that have been proposed, to deal with the issue of redundant data transfers. In this paper we focus on the efficient estimation and reduction of redundant data transfers over the Web. We first prove that a vast amount of redundant data is transferred in Web pages that are considered to carry fresh data. We show this by following an approach based on Web page fragmentation and manipulation. Web pages are broken down to fragments, based on specific criteria. We then deal with these fragments as independent constructors of the Web page and study their change patterns independently and in the context of the whole Web page. After the fragmentation process, we propose solutions for dealing with redundant data transfers. This paper has been based on our previous work on ‘Web Components’ but also on related work by other researchers. It utilises a proxy based, client/server architecture, and imposes changes to the algorithms executed on the Proxy server and on clients. We show that our proposed solution can considerably reduce the amount of redundant data transferred on the Web. Copyright © 2004 John Wiley & Sons, Ltd.     

上市公司资本成本面板数据模型与实证分析

本文利用我国上市公司1997至2002年的有关财务数据,建立了我国上市公司资本成本面板数据模型,运用该模型分析了我国上市公司资本成本与财务杠杆、企业规模的关系.结果表明,财务杠杆的提升、企业规模的扩大将使资本成本下降.该结论对我国上市公司优化资本结构、提高企业价值具有一定的参考价值.     

胶子重组函数的性质

通过协变和非协变的方法研究了领头对数近似(LLA)下扭度为4的QCD演化方程中的胶子重组函数的性质.指出了GLRMQ方程中的胶子重组函数并不适用.讨论了避免红外发散的方法,这种方法可以用于高扭度下演化核和系数函数的推导.     

Highly strained InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE

Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on In_xGa_(1−x)As−In_yAl_(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In_0.84Ga_0.16As/AlAs/In_0.52Al_0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In_0.84Ga_0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated.