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91.
92.
High temperature scanning tunneling spectroscopy (HT-STS) was used to investigate the electronic structure of Au(1 1 1) at different temperatures in the energy range 0-1 eV below the Fermi level. We concentrated on the influence of temperature on the Shockley surface state (SS) appearing on noble metals surface due to a surface projected bulk bang gap in [1 1 1] direction. The influence of temperature on the projected band gap edge (BE) was also investigated. The experiment was carried out in the temperature range 294-580 K. As the result of the experiment a delicate shift of the SS and the BE in direction of the Fermi level was reported. 相似文献
93.
Microstructure and related properties of hydrogenated silicon samples, Si:H, treated at high-temperature (HT) up to 1270 K under hydrostatic argon pressure (HP) up to 1.1 GPa are investigated. To prepare Si:H, Czochralski grown 0 0 1 oriented single crystalline Si wafer with 50 nm thick surface SiO2 layer was heavily implanted with hydrogen using the immersion plasma source of hydrogen ions with energy 24 keV.The surface of HT-HP treated Si:H was characterised by scanning electron microscopy. Reflectivity pattern measurements in the wavelength range of 350-2000 nm have been performed to analyse their surface and bulk properties. The volume averaging method for a model of layer-like structure has been used to simulate the HT-HP treated Si:H. The analysis of Si:H samples suggests the multi-layer structure composed of Si, Si:H, SiO, SiO2, and of porous Si layers in the sub-surface region. The porous Si:H samples model is in good consistency with experimental data from reflectance measurements. 相似文献
94.
A way of determining the flexibility of wood-pulp fibres is developed, which involves i) a precise measurement of the topology
of single-fibres by using a confocal laser scanning microscope and ii) the measurement of the elastic modulus of the fibres
by using a single-fibre fatigue cell. Reported in this paper are the initial results of tests carried out on black spruce
fibres, which have been subjected to three different levels of mechanical refining energy, namely ∼1100, 2300, and 3500 kWh/t.
It is found that the fibre flexibility rises significantly between the first and second energy levels, but it does not change
to the same degree between the second and third ones. The described procedure of measuring the flexibility of fibres may be
used to establish the appropriate refiner energy necessary for the production of a specific grade of paper.
Russian translation published in Mekhanika Kompozitnykh Materialov, Vol. 42, No. 1, pp. 115–128, January–February, 2006. 相似文献
95.
96.
提出了单层光学薄膜中薄膜与衬底反射光之间的双重干涉效应的理论,实验结果证实了理论分析的正确性。双重干涉效应使薄膜-衬底体系的热致反射调制度高达80%,这一效应可望有极广泛的应用 相似文献
97.
介绍了几种结构合理的超导/半导兼容材料的制作技术及其测试结果,重点讨论了超导体(YBCO)与半导体(Si,CaAs)间缓冲层的选取,并对这几种复合材料的性能作了较详细的分析。 相似文献
98.
Any global minimization algorithm is made by several local searches performed sequentially. In the classical multistart algorithm, the starting point for each new local search is selected at random uniformly in the region of interest. In the tunneling algorithm, such a starting point is required to have the same function value obtained by the last local minimization. We introduce the class of acceptance-rejection based algorithms in order to investigate intermediate procedures. A particular instance is to choose at random the new point approximately according to a Boltzmann distribution, whose temperatureT is updated during the algorithm. AsT 0, such distribution peaks around the global minima of the cost function, producing a kind of random tunneling effect. The motivation for such an approach comes from recent works on the simulated annealing approach in global optimization. The resulting algorithm has been tested on several examples proposed in the literature. 相似文献
99.
本文从“同温度层不完全平行于地面,且在变化”的“任意分层”假设出发,导出了水准折光修正公式,并利用光的色散效应在10~(-6)的精度要求下,求得r=r_T=h_1/h_2=(n_(01)-1)/(n_(02)-1)=常数最后指出,研制双波长激光水准仪的必要性和可能性,并提出了研制此种仪器的技术参数. 相似文献
100.
本文评述了单晶CoSi_2和NiSi_2的结构特点、各种制备方法、器件应用和发展前景。采用分子束外延(MBE)和“内延”法(Mesotaxy)制备的单晶硅化物质量,电学性能和热稳定性较好。由于首次得到理想的突变的金属——半导体接触,使对金属——半导体接触的理论分析成为可能。硅/单晶硅化物/硅结构在实际应用中非常重要,如单晶硅化物作集电极埋层,能降低集电极串联电阻,克服重掺杂埋层的横扩和自掺杂问题,提高了电路工作速度,减小了器件面积。埋层硅化物也可作为微波传输线的地线,是实现高频集成电路互连的好方法。而采用该结构制备的高速器件——金属基区晶体管(MBT)和穿透基区晶体管(PBT),具有很好的应用前景。 相似文献