Experience Gained Using Second-Moment Closure Modeling for Transitional Flows Due to Boundary Layer Separation

This paper presents detailed information on the experience gained during the attempts to model a set of transitional flows due to boundary layer separation. These flows are developed on a flat plate with a semi-circular leading edge and they have been coded by the ERCOFTAC Special Interest Group on Transition, as T3L flows. Different freestream velocities and turbulence intensities configure these transitional flows and, by consequence, govern the transition mechanism, resulting in larger or smaller transitional regions. The modeling of the T3L flows has been performed by adopting a low-Reynolds number second-moment closure turbulence model. The results showed satisfactory agreement with the experimental measurements, although some difficulties regarding successful convergence have been faced. The final conclusion is that turbulence modeling can present quite accurate results for transitional flows without any additional use of ad-hoc modifications or additional equations based on various transition models and intermittency transport modeling.     

隧穿问题的数值算法

本文给出一种新的数值方法，用以计算隧道效应中的透射系数和相移。这个方法适用于任意形状的势垒，不仅可以计算透射系数，还可以计算透射波和反射波的相位。分析表明该方法具有很高的精度。     

脉冲激光LGA法钛表面氮化及其XRD和SEM微观分析

用调Ｑ－ＹＡＧ和ＸｅＣｌ脉冲激光在钛表面以激光气体合金化方法生成氮化钛层，用Ｘ射线衍射仪分析了不同激光能量、不同Ｎ２气压不同作用脉冲数等条件下ＴｉＮ的结晶取向、结晶形态、氮化程度，用扫描电镜观察了它们的微观结构，对脉冲激光的ＬＧＡ法机理进行了探讨，也发现了用ＬＧＡ法对Ｍｏ的氮化生成Ｍｏ２Ｎ．     

高层印制线路板正面临的对位挑战

封装工业正在推动着印制线路板技术水平朝着半导体要求的方向发展。高密度印制线路板正广泛用于网络路由器、自动测试设备和服务器领域。高密度要求(>150 IO/cm~2)正成为客户的普通需求。为满足现有的高密度封装要求,由于线宽、线距和通孔孔径正接近传统制作极限,普遍的方法就是不断增加印制线路板的层数。这些特征正驱动着印制线路板在基材、图像转移、蚀刻、电镀、阻焊、测试流程和对位系统的变化。此文主要讲述了印制线路板特性的变化趋势和利用对位模式和雷利分布去预测满足高级对位要求的能力以及印制线路板各流程中有关对准度的控制要点。     

非线性编辑中特效图文素材的应用

Cool 3D是一款特效图文制作软件，适用于动画片段、3D文字、图形等制作场合。Cool 3D中制作的特效素材应用于非线性编辑中，可以丰富素材的表现形式，提高节目编辑制作的整体质量。     

P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory

The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.     

InAs/GaSb/AlSb resonant tunneling spin device concepts

We discuss device concepts for creating spin-polarized current sources without external magnetic fields, using non-magnetic 6.1 Å semiconductor resonant tunneling structures. Spin filters, spin pumps, and spin transistors that exploit structural and bulk inversion asymmetries will be examined.     

Scanning probe microscopy characterization of gold-chemisorbed poplar plastocyanin mutants

Two poplar plastocyanin mutants adsorbed onto gold electrodes have been characterized at single molecule level by scanning probe microscopy. Immobilization of the two redox metalloprotein mutants on Au(1 1 1) surface was achieved by either a disulphide bridge (PCSS) or a single thiol (PCSH), both the anchoring groups having been introduced by site-directed mutagenesis. Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) analysis gives evidence of a stable and robust binding of both mutants to gold. The lateral dimensions, as estimated by STM, and the height above the gold substrate, as evaluated by AFM, of the two mutants well agree with crystallographic sizes. A narrower height distribution is observed for PCSS compared to PCSH, corresponding to a more homogeneous orientation of the former mutant adsorbed onto gold. Major differences between the mutants are observed by electrochemical STM. In particular, the image contrast of adsorbed PCSS is affected by tuning the external electrochemical potential to the redox levels of the mutant, consistent with some involvement of copper active site in the tunneling process. On the contrary, no contrast variation is observed in electrochemical STM of adsorbed PCSH. Moreover, scanning tunneling spectroscopy experiments reveal asymmetric I–V characteristics for single PCSS proteins, reminiscent of a rectifying-like behaviour, whereas an almost symmetric I–V relation is observed for PCSH.     

Temperature factor effect on the structure of the separated flow within a supersonic gas stream

The effect of the temperature factor, that is, the ratio of the body temperature to the freestream stagnation temperature, on the structure of the separated flow formed in the presence of a concave corner in a supersonic stream is studied. The strong influence of the temperature factor on the separation zone length and the flow-generated aerodynamic characteristics is established. It is shown that for fairly large deflection angles this flow cannot be described by free interaction, or triple deck, theory.     

基于积分方法的二维平行剪切层声远场预测

本文采用二维Ffowcs Williams＆Hawkings(FW-H)方程对平行剪切层远声场辐射特性进行了研究。近流场时间精确数据通过计算气动声学(Computational Aeroacoustics,CAA)技术数值模拟获得,声远场信息则通过FW-H方程对近流场内的可穿透积分面进行积分获得。该方法首先采用具有解析解的涡/尾缘干涉问题进行了校核,进一步采用CAA/FW-H匹配技术对二维平行剪切层声辐射问题进行了预测,计算结果表明,积分解与计算域内的CAA数值解吻合较好。