高功率激光焊接光致等离子体的检测

系统地归纳了高功率激光焊接过程中光致等离子体的声、光、电、热等四种特征信号,综述了国外在等离子体信号检测方面的试验方法及研究进展,分析了未来的发展趋势。     

激光对CCD器件破坏时几种阈值的测量

本文简要回顾了近十年来激光CVD(LCVD)技术的发展概况及其在金属、电介质和半导体薄膜生长方面的应用情况。阐明了这种新发展起来的成膜技术不仅因其生长的低温化能够给器件带来优良的电学特性,同时也可利用其高精度的膜厚控制特性获得新结构的材料和器件。作者还对该技术的广泛的应用前景予以展望和肯定。     

连续运转的掺钛蓝宝石激光器

本文报导一种连续波氩离子激光泵浦的掺钛蓝宝石激光器。在氩离子激光功率(全谱线)为10.45瓦且仅用一组腔镜时,获得最大平均功率超过1000mW、调谐范围750～850nm的掺钛蓝宝石激光输出。     

改进了的光场—boson元激发非线性耦合的激光模型

在我们最近提出的光场Ｂ－ｂｏｓｏｎ元激发耦合激光模型的基础上，通过附加一个抽运系统的速率方程，将原先的激光动力学加以改进，以图整个系统的运作趋于更完备的远离平衡自组织。经过这样改动以后，改进后激光动力系统的速率方程组和描述光场与二能级原子相互作用的麦克斯韦－布洛赫方程组在形式上也有其更加相似之处；两者的自由变量与外控参量都有一一对应关系。     

复杂形体目标激光散射特征测量系统的研制

复杂形体目标激光散射特征的测量系统中，利用反射式离轴光路满足了可见到远红外波段的测量需要，通过大孔径（250mm）物方远心接收光路实现了对实际远场的模拟测量，以光滑镀金球体作为标准器，可直接获得任意目标散射截面的绝对值。在0．6328、1．06和10．6μm三个波段针对标准器的实测结果表明，平均误差小于4．95％。     

半导体激光器到单模光纤耦合技术的现状及发展趋势

简要阐述了半导体激光器到单模光纤的耦合损耗来源，详细介绍和分析了耦合技术的发展和现状，并探讨了耦合技术的发展趋势。     

激光焊接超细基胎体金刚石薄壁钻

采用激光焊接超细预合金粉胎体，开发了新的薄壁钻产品，通过对与现有的产品工艺、性能测试以及实际使用分析对比，结果表明：激光焊接与普通钎焊相比结合强度提高2－3倍，克服了胎体脱落问题，胎体耐磨性提高了50％－120％，其中轴向磨损速率提高1．2倍；钻削速度提高30．4％，工矿适应性增加，使用寿命提高25％－108％。     

Depth profiling of latex blends of fluorinated and fluorine‐free acrylates with laser‐induced secondary mass spectrometry

We explored phase separation and self‐assembly of perfluoroalkyl segments at the surface of polymer films obtained from latices of semifluorinated acrylate copolymers and the corresponding latex blends of nonfluorinated and semifluorinated polyacrylates. With laser‐induced secondary mass spectrometry the fluorine distribution was measured after annealing above the minimum film‐forming temperature of the polymers up to a depth of several micrometers. Depth profiles of a semifluorinated acrylate homopolymer and latex blends thereof with fluorine‐free alkylacrylates with 25, 50, and 75 mol % semifluorinated acrylate as well as a copolymer comprised of alkyl acrylate and semifluorinated acrylate (50/50 mol %) were investigated. In the case of latex blends containing both semifluorinated polyacrylates and fluorine‐free or low‐fluorine polymers, self‐assembly accounted for enrichment of the perfluoroalkyl segments at the surface. Coatings exhibiting low surface energy and having a substantially reduced total fluorine content were obtained. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 360–367, 2003     

荧光光纤温度传感器激励光源的选择

本文分析计算了荧光光纤温度传感器的温敏元件——GsAlAs/GaAs双异质结半导体材料的荧光辐射效率与激励光波长的关系。讨论了温度测量范围及温敏元件GaAlAs层铝含量对激励光源的限制,在0～200℃测温范围内,若采用LED作激励光源,其峰值波长应在0.70～0.76μm之间选择。     

SiGe: An attractive material for post-CMOS processing of MEMS

This work gives an overview of the different developments for silicon germanium (Si_1−xGe_x) from a MEMS post-processing perspective. First, the maximum processing temperature that does not introduce any damage or degradation into the standard characteristics of the CMOS driving electronics is specified. Then, the optimal type of silicon and germanium gas sources and deposition technique that results in an economical process are identified. Next, the selection criteria for a low thermal budget doping method and doping species are discussed. Finally, the advantage and disadvantage for the different approaches implemented for enhancing the physical properties of poly Si_1−xGe_x at a CMOS backend compatible temperature are highlighted. It is shown that the optimal method depends on the application requirements and the CMOS technology used for realizing the driving electronics.