光纤表面自组装胶体晶体微结构的实验研究

利用自组装方法在普通单模光纤裸纤表面生长胶体晶体,采用自组装方法制备了一种新型的三维光子晶体微结构光纤。将单分散度小于2％的二氧化硅胶体微球超声分散于乙醇溶液,通过垂直沉积法在表面经湿法腐蚀处理的裸光纤表面组装胶体晶体。采用SEM对样品进行表征,胶体样品表面为六角密排列,晶体呈FCC结构,其（111）晶面平行于光纤表面。当微球直径远小于光纤直径时,在60℃温度下制备的胶体样品有较好的质量。     

ArF准分子激光器的窄线宽可调谐运转及注入放大

在一台快放电泵浦的ＡｒＦ准分子激光振荡放大系统的振荡级上采用光栅、扩束镜、光阑等腔内元件，用组合输出镜获得了线宽小于０．１ｎｍ，调谐范围～１ｎｍ的激光输出。注入到非稳腔结构的放大级，注入后放大级效率提高了约５０％，获得了平均３０ｍＪ／脉冲的高光束质量的窄线宽可调谐激光，最大单脉冲能量＞５０ｍＪ，并进行了氧气的吸收光谱实验。     

二维Kagome格子光子晶体禁带的数值模拟

采用平面波展开法模拟计算了由空气背景中的介质柱构成的二维Kagome格子光子晶体的能带结构，得到了使完全光子禁带最大化的结构参量．计算结果表明：由圆形、正六边形和正四边形三种不同形状锗介质柱构成的Kagome格子光子晶体都出现了完全光子禁带，最大禁带分别为△=0．014(ωa／2πc)、△=0．013(ωa／2πc)、△=0．011(ωa／2πc)．发现由圆形和正六边形两种介质柱构成的Kagome格子光子晶体在填充比连续变化的较大的范围内都有宽度较为稳定的完全禁带，且它们具有非常相似的能带结构．     

一种带曲率补偿、工作电压1.2 V、可调带隙基准电压电路

在分析常规带隙基准电路的基础上,设计了一种带曲率补偿可调节的带隙基准电压电路,并且具有良好的温度系数。电路设计和仿真工具使用Cadence的Spectre。采用SMIC标准0.25μmCMOS工艺。电路中包含的运放为两级放大电路,开环增益为85dB。带隙基准电压电路采用并联电阻的简单电路实现了有效的曲率补偿,在2.5V工作电压下,-25~125℃,TC=3.10ppm/℃,功耗为0.859mW。电路也可以在1.2V电压下工作,-25~125℃,TC=5.34ppm/℃,功耗为0.36mW。     

硅基槽型微环谐振器及其调谐特性研究

仿真和实验研究了含槽型(slot)光波导的反馈波导型微环谐振器的特性,将槽型光波导集成到Si基微环谐振器中,丰富Si基光波导的功能,为新型光电子器件的实现提供途径。通过锥形波导结构实现从传统波导到槽型波导的模式转换,减小传输损耗,采用时域有限差分法(FDTD)研究了光功率的分布和模式转换过程。结果显示,光功率逐渐转移到锥形结构两侧的槽型波导中并最终形成槽型波导中的传输模式,通过优化锥形结构能实现较高的模式转换效率,可以达到90%以上。采用电子束刻写技术和等离子刻蚀技术制备了反馈波导型槽型微环谐振器。实验显示,锥形波导能够实现模式的转换,光传输过程良好。通过在槽型波导中填充电光聚合物来改变槽型光波导的折射率,测量结果显示,传输谱谐振峰发生了明显移动,移动幅度达到5.6nm,器件具备很好的可调谐性。     

空心布拉格光纤及其在传感应用中的研究进展

基于一维光子带隙(PBG)效应导波机制的空心布拉格光纤(HC-BFs)具有灵活方便的带隙调控能力和优良的宽带低损耗传输特性,作为一类独特的光子带隙型空心光纤,在光波传输、色散管理与控制、光纤型器件和传感检测等领域表现出巨大的应用潜力.从光纤波导结构设计与导波模式传输特性、包层材料构成与光纤制备工艺,以及基于气态或液态被测物质填充中空纤芯的痕量气体检测和生化传感中的应用等方面对HC-BF研究的发展历程和新进展进行了综合评述.     

MEMS波长可调谐激光器及其进展

论述了MEMS波长可调谐激光器及其进展。介绍了几种不同类型的波长可调谐激光器,如基于表面微机械反射镜的MEMS可调谐激光器、基于深腐蚀圆形反射镜的MEMS可调谐激光器、基于闪耀光栅的MEMS可调谐激光器、基于阵列集成的MEMS可调谐DFB激光器和VCSEL基MEMS可调谐激光器。     

一个1.2伏CMOS0.13微米工艺19.2毫瓦10位30兆采样率流水线模数转换器

A 10-bit 30-MS/s pipelined analog-to-digital converter (ADC) is presented. For the sake of lower power and area, the pipelined stages are scaled in current and area, and op amps are shared between the successive stages. The ADC is realized in the 0.13-μ m 1-poly 8-copper mixed signal CMOS process operating at 1.2-V supply voltage. Design approaches are discussed to overcome the challenges associated with this choice of process and supply voltage, such as limited dynamic range, poor analog characteristic devices, the limited linearity of analog switches and the embedded sub-1-V bandgap voltage reference. Measured results show that the ADC achieves 55.1-dB signal-to-noise and distortion ratio, 67.5-dB spurious free dynamic range and 19.2-mW power under conditions of 30 MSPS and 10.7-MHz input signal. The FoM is 0.33 pJ/step. The peak integral and differential nonlinearities are 1.13 LSB and 0.77 LSB, respectively. The ADC core area is 0.94 mm².     

In situ measurement on nonuniform velocity distributionin external detonation exhaust flow by analysis ofspectrum features using TDLAS

Instantaneous and precise velocity sensing is a critical part of research on detonation mechanism and flow evolution.This paper presents a novel multi-projection tunable diode laser absorption spectroscopy solution,to provide a real-time and reliable measurement of velocity distribution in detonation exhaust flow with obvious nonuniformity.Relations are established between overlapped spectrums along probing beams and Gauss velocity distribution phantom according to the frequency shifts and tiny variations in components of light-of-sight absorbance profiles at low frequencies analyzed by the fast Fourier transform.With simulated optical measurement using H2O feature at 7185.6 cm-1 carried out on a phantom generated using a simulation of two-phase detonation by a two-fluid model,this method demonstrates a satisfying performance on recovery of velocity distribution profiles in supersonic flow even with a noise equivalent absorbance up to 2×10^-3.This method is applied to the analysis of rapidly decreasing velocity during a complete working cycle in the external flow field of an air-gasoline detonation tube operating at 25 Hz,and results show the velocity in the core flow field would be much larger than the arithmetic average from traditional tunable diode laser doppler velocimetry.This proposed velocity distribution sensor would reconstruct nonuniform velocity distribution of high-speed flow in low cost and simple operations,which broadens the possibility for applications in research on the formation and propagation of external flow filed of detonation tube.     

High‐mobility solution‐processed zinc oxide thin films on silicon nitride

A high effective electron mobility of 33 cm² V^–1 s^–1 was achieved in solution‐processed undoped zinc oxide (ZnO) thin films. The introduction of silicon nitride (Si₃N₄) as growth substrate resulted in a mobility improvement by a factor of 2.5 with respect to the commonly used silicon oxide (SiO₂). The solution‐processed ZnO thin films grown on Si₃N₄, prepared by low‐pressure chemical vapor deposition, revealed bigger grain sizes, lower strain and better crystalline quality in comparison to the films grown on thermal SiO₂. These results show that the nucleation and growth mechanisms of solution‐processed films are substrate dependent and affect the final film structure accordingly. The substantial difference in electron mobilities suggests that, in addition to the grain morphology and crystalline structure effects, defect chemistry is a contributing factor that also depends on the particular substrate. In this respect, interface trap densities measured in high‐κ HfO₂/ZnO MOSCAPs were about ten times lower in those fabricated on Si₃N₄ substrates. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)