Superb thermal stability purple-blue phosphor through synergistic effect of emission compensation and nonradiative transition restriction of Eu2+

Phosphors with outstanding luminescence thermal stability are desirable for high-power phosphor-converted light-emitting diode (pc-LED) lightings. High structural rigidity and large bandgap of phosphor hosts are helpful to suppress nonradiative relaxation of optical centers and realize excellent thermal stability. Unfortunately, few host materials simultaneously possess aforementioned structural features. Herein, we confirm that Sr₃(PO₄)₂ (SPO) phosphate possesses high structural rigidity (Debye temperature, Θ_D = 559 K) and large bandgap (E_g = 8.313 eV) by density functional theory calculations. As expected, Eu²⁺-doped SPO purple-blue phosphors show extraordinary thermal stability. At 150/300 °C, SPO:5%Eu²⁺ presents emission loss of only 4%/8% and a predicated ultrahigh thermal quenching temperature of 973 °C. The most strikingly discoveries here are that thermal-induced emission compensation appears within two distinct Eu²⁺ sites of SPO host. The outstanding thermal stability, on one hand, is attributed to rigid structure and large bandgap of host that inhibits nonradiative relaxation of Eu²⁺ and on the other hand, the emission self-compensation of Eu²⁺. Benefiting from synergistic effect of emission compensation and nonradiative transition restriction of Eu²⁺, as-prepared SPO:5%Eu²⁺ purple-blue phosphor not only presents superior thermal stability but also high internal quantum efficiency of 95.1% and excellent hydrolysis resistant. Some advanced applications are explored including white LED lighting and wide-color-gamut display. Our work provides in-deep insights into structure-property relationships of thermally stable phosphors.     

Changes in the physical properties of low bandgap polymer after interaction with ionic liquids

Over the past few years, polymers shown comprehensive utilization in optical devices, solar cells, sensors, and other such devices. However, the efficiency of these devices remains a problem. We have synthesized new thiophene based, lowband gap polymer, poly(2-heptadecyl-4-vinylthieno[3,4-d] [1,3] selenazole) (PHVTS) and investigated the interactions between the PHVTS and ionic liquids (ILs), in this study. We have used imidazolium- and ammonium-family ILs, and studied the interactions using various spectroscopic techniques such UV–visible, FTIR, and confocal Raman spectroscopies. Additionally, we studied surface morphology of the polymer-IL film. Spectroscopic studies show that both families of ILs can interact with the newly synthesized polymer poly(2-heptadecyl-4-vinylthieno[3,4-d] [1,3] selenazole). However, the imidazolium-family Ionic Liquid-polymer (IL-polymer) mixture films show higher conductivities than ammonium-family IL–polymer mixture films.     

3-氨基丙醇调控合成超顺磁四氧化三铁微球

采用乙二醇为溶剂,无水FeCl3为铁源,聚丙烯酸为稳定剂,通过改变3-氨基丙醇的用量,合成了一系列不同微球直径和晶粒大小的超顺磁Fe3O4微球。高分辨率透射电镜和X-射线衍射分析证实所得产物为Fe3O4,红外光谱和热重分析表明,微球表面成功包覆聚丙烯酸。微球的大小和组成微球的颗粒粒径分别用透射电镜和X-射线衍射分析,结果表明,所得微球的直径随着3-氨基丙醇的用量增加而减小,组成微球的颗粒粒径随着3-氨基丙醇的用量增加而增大。磁性测试表明所制备微球室温下具有良好的超顺磁性。该制备方法步骤简单,可望用于其他无机氧化物纳米微球或颗粒的制备。     

Spatially and electrically tunable random lasing based on a polymer-stabilised blue phase liquid crystal-wedged cell

ABSTRACT

We demonstrate a spatially and electrically tunable random lasing based on polymer-stabilized blue phase liquid crystal (PS-BPLC)-wedged cell. The spatially tunable random lasers can be obtained from the laser dye-doped PS-BPLC-wedged cell through changing the pump positions, where the emission wavelength of the random laser can be tuned due to the thickness gradient of the wedged cell, which affects the scattering mean free path. Additionally, applying different electric fields can also tune the laser emission wavelength. The changing of refractive index due to the Kerr effect leads to a change in the scattering mean free path, resulting in shift of lasing wavelength. This PS-BPLC-wedged cell device has a great potential in applications of speckle-free imaging, document coding, biomedicine and other photonic devices.     

一个高精度低温漂的带隙基准源

文章对传统典型CMOS带隙电压基准源电路分析和总结,重点分析了温度补偿原理。在对传统温度补偿技术改进的基础上,采用低失调电压运算放大器,融合了熔丝烧写调整电压技术,提出了一个温漂低于15×10-6℃-1的改进型带隙基准源电路。整个电路采用CSMC0.5μm工艺设计,采用Hspice进行仿真。为补偿工艺偏差,输出电压及输出电压的温漂均可通过铝熔丝烧写来调整。     

一种低温漂BiCMOS带隙基准电压源的设计

文章介绍了一种低温漂的BiCMOS带隙基准电压源.基于特许半导体(Chartered)0.35 μm BiCMOS工艺,采用Brokaw带隙基准电压源结构,通过一级温度补偿技术,设计得到了一种在-40℃到 85℃的温度变化范围内温度系数为15.2×10-6/℃,输出电压为2.5 V±0.002 V的带隙基准电压源电路.±20%的电源电压变化情况下,输出电压变化为2.2 mV,电源电压抑制比为60 dB.5 V电源电压下功耗为1.19 mW.具有良好的电源抑制能力.     

可调谐二极管激光吸收光谱法测量气体温度

研究了一种新型的非接触式测温技术——可调谐二极管激光吸收光谱(TDLAS)测温技术。介绍了温度测量及调制吸收光谱技术原理,分析了调制幅度对气体温度测量的影响。优选了氧气吸收谱线对13163.78 cm-1和13164.18 cm-1,在搭建的高温实验系统上,实现了气体温度和浓度的同时测量。通过分析实测波形获得了谱线13164.18 cm-1在823~1323 K温度范围内的碰撞展宽系数和温度指数。实验结果表明,在823~1323 K温度范围内,系统温度测量的线性误差为0.65%,最大波动为±15 K。     

一种用于新型非致冷红外焦平面阵列读出电路的基准电流源

设计了一种用于新型非制冷红外焦平面阵列读出电路的低温漂、无电阻基准电流源。首先通过二阶补偿的无电阻带 隙基准电路得到基准电压$V_{_{REF}}$,然后将其接到一个NMOS输出管上;通过调节$V_{_{REF}}$使得该输出管工作在零温 漂区,最终产生一个与温度无关的基准电流$I_{_{REF}}$。在CSMC 0.5$\upmu$m CMOS工艺条件下,采用spectre软件进行了模拟验证。 测试结果表明,在0℃ $\sim$ 120℃的温度变化范围内,输出电流的波动小于4$\upmu$A;当电源电压为3.3V时,整个电路的功 耗仅为0.94mW。     

一种高输入电压高PSRR的带隙基准电路设计

在高压宽输入范围的芯片中,高压电源一般不直接作为带隙基准电路的电源。传统方案采用齐纳二极管加源随器将高压输入转换为低压电源,为带隙基准供电,然而低压电源波动过大,降低了带隙基准的PSRR。电源由反馈环路产生,可以提供高PSRR性能。文章提出了一种输入电压范围为5～65 V,通过闭环负反馈产生低压电源和1.2 V基准电压的带隙基准电路,适用于宽输入电压芯片,如Buck、电机驱动或模拟ASIC芯片。该带隙基准电路的电源是将自身产生的电流流经PMOS,由PMOS的V_GS确定。因此低压电源不随输入电压变化,线性调整率极低。该电路由预处理电路、启动电路和带隙基准电路组成,采用负反馈稳压设计,不使用齐纳二极管,不引入额外的掩膜层,降低了电路成本。在CSMC 0.25μm BCD工艺下,基准电压线性调整率低至0.000 091%,输入电压在5～65 V范围内基准变化小于1μV,低频PSRR为-160 dB@100 Hz,温度系数为2.8×10^-5/℃。     

基于法布里-珀罗滤波片的宽光谱可调谐滤波器

分析了基于F-P滤波器原理的可调谐滤波器的原理,设计并实现了覆盖C L带的光谱连续可调的宽光谱可调谐滤波器,插入损耗小于2 dB,波长精度及温度稳定性均小于0.01 nm.