Sol-gel法制备SrTiO_3薄膜的电阻开关性能研究

采用sol-gel法制作了28nm厚的SrTiO3薄膜和Au/SrTiO3/LaNiO3/Si(100)三明治结构的器件,并研究其物理性能。结果显示:室温下,用直流电压可以使薄膜的电阻在高低阻态间进行转换。最大的电阻变化率约为10309。对I-V特性的分析,发现在高阻态时,有空间电荷限制电流机制(SCLC)和肖特基势垒导电机制存在。应用在高场区有非对称电子陷阱中心的空间电荷限制电流理论,解释了这种电阻开关现象。     

Substitution reactions of gaseous ions in a three‐dimensional quadrupole ion trap

Substitution reactions between gaseous ions and neutral substrate molecules are of ongoing high interest. To investigate these processes in a qualitative and quantitative manner, we have constructed a device, with which a defined amount of a volatile substrate can be mixed with a defined amount of helium gas and added into a three‐dimensional quadrupole ion trap. From the known inner volume of the device, the known ratio n_substrate:n_He of the mixture, and the determined absolute partial pressure of helium in the ion trap, we can derive the partial pressure of the substrate in the ion trap and, thus, convert the directly observable pseudo–first‐order rate constants of the substitution reactions into absolute bimolecular rate constants. We have tested the device by investigating a series of S_N2 reactions of Br ^? and CF₃CH₂O ^? anions as well as ligand exchange reactions of ligated Na⁺ cations. As the obtained results suggest, the described device makes it possible to determine the bimolecular rate constants of substitution reactions as well as other ion‐molecule reactions with satisfactory accuracy and reliability.     

Towards a Living Radical Polymerization of Styrene by Using Dithiolactone as a New Type of Mediating Agent

In this communication, γ‐phenyl‐γ‐butyrodithiolactone (DTL1) is presented as the first example of a new type of control agent. The styrene polymerization carried out at 60 °C in the presence of DTL1 exhibits living characteristics, without consuming DTL1 during the process. This unprecedented behavior was explained by a mechanism based on the reversible formation of a persistent radical adduct between the DTL1 and the polystyrene macroradicals.

     

Localized electron traps on extended molecular surfaces

We have previously alluded to the fact that concentrated charge pockets can form on molecular surfaces that can act to stabilize excess electrons. These charge pockets are formed from systems, which posses a network of hydrogen bonded OH groups on one side of the surface and hydrogen atoms on the opposite side of the molecular surface. In this work, we have increased the size of our recently reported molecular surfaces (Jalbout and Adamowicz, Mol Phys, 2006, 19, 3101) while keeping the number of OH groups constant, to investigate localized charge concentration on extended frameworks. © 2007 Wiley Periodicals, Inc. Int J Quantum Chem, 2008     

Translational cooling of doped nanocrystals by Raman pulses: Towards macroscopic quantum state

One of the most interesting problems of modern physics is the realization of nanoparticles in macroscopic quantum states, in which they behave as a quantum objects. These states can only be implemented at ultra-low translational temperatures that have not been achieved so far. Here we develop a novel method for optical cooling of CaF₂:Yb³⁺ nanocrystals, which is based on the coherent population transfer induced in the impurity ions by ultraviolet Raman pulses. A doped nanocrystal localized in a radio-frequency trap is cooled due to the photon recoil from the pulses of varied intensity. The proposed method allows to obtain nanocrystals with translational temperatures of the order of 10^?9 K, which indicates that the nanocrystal approaches a macroscopic quantum state.     

Superfluid to Mott insulator quantum phase transition in a 2D permanent magnetic lattice

The accessibility of the critical parameters for the superfluid to Mott insulator quantum phase transition in a 2D permanent magnetic lattice is investigated. We determine the hopping matrix element J, the on-site interaction U, and hence the ratio J/U, in the harmonic oscillator wave function approximation. We show that for a range of realistic parameters the critical values of J/U, predicted by different methods for the Bose-Hubbard model in 2D, such as mean field theory and Monte Carlo simulations, are accessible in a 2D permanent magnetic lattice. The calculations are performed for a 2D permanent magnetic lattice created by two crossed arrays of parallel rectangular magnets plus a bias magnetic field.     

Superfluid phases of the three-species fermion gas

We discuss the zero temperature phase diagram of a dilute gas with three fermionic species. We make use of solvable limits to conjecture the behavior of the system in the “unitary” regions. The physics of the Thomas-Efimov effect plays a role in these considerations. We find a rich phase diagram with superfluid, gapless superfluid and inhomogeneous phases with different symmetry breaking patterns. We then discuss one particular possible experimental implementation in a system of ⁶Li atoms and the possible phases arising in this system as an external magnetic field is varied across three overlapping Feshbach resonances. We also suggest how to experimentally distinguish the different phases.     

Charge‐Carrier Balance and Color Purity in Polyfluorene Polymer Blends for Blue Light‐Emitting Diodes

A study of an efficient blue light‐emitting diode based on a fluorescent aryl polyfluorene (aryl‐F8) homopolymer in an inverted device architecture is presented, with ZnO and MoO₃ as electron‐ and hole‐injecting electrodes, respectively. Charge‐carrier balance and color purity in these structures are achieved by incorporating poly(9,9‐dioctylfluorene‐co‐N‐(4‐butylphenyl)‐diphenylamine (TFB) into aryl‐F8. TFB is known to be a hole‐transporting material but it is found to act as a hole trap on mixing with aryl‐F8. Luminance efficiency of ≈6 cd A^?1 and external quantum efficiency (EQE) of 3.1% are obtained by adding a small amount (0.5% by weight) of TFB into aryl‐F8. Study of charge injection and transport in the single‐carrier devices shows that the addition of a small fraction of hole traps is necessary for charge‐carrier balance. Optical studies using UV–vis and fluorescence spectroscopic measurements, photoluminescence quantum yield, and fluorescence decay time measurements indicate that TFB does not affect the optical properties of the aryl‐F8, which is the emitting material in these devices. Luminance efficiency of up to ≈11 cd A^?1 and EQE values of 5.7% are achieved in these structures with the aid of improved out‐coupling using index‐matched hemispheres.     

Observation and characterization of near-interface oxide traps in 3C-SiC MOS structures by quasi-static I-V method

The electrical properties of oxides grown on 3C-SiC by rapid thermal processing in various oxidizing and annealing atmospheres are investigated using a quasi-static method. According to the anomalous capacitance hump, the existence of two types of traps, interface and near interface oxide traps, is observed in quasi-static. By monitoring the sweep-rate measurement of the quasi-static current related to electron tunneling from interface traps to near-interface oxide traps, a profile of the traps in response time can be obtained. Based on the extracted parameters of the carrier traps, we demonstrate that the near SiO₂/3C-SiC interface is significantly improved when using 100% N₂O compared to 100% O₂ or even N₂-O₂ dilution as oxidizing gas. Also, we show that incorporating N₂ during the oxidation in O₂ is not favourable for the reduction of the near-interface oxide traps.     

Analysis of the glow curve of KMgF3:Lu compounds without resorting to the quasi-equilibrium approximation

In this article we report an expression for the thermoluminescence light, which is derived from the set of differential equations by assuming negligible retrapping, but without resorting to the quasi-equilibrium approximation. The expression has been employed for analysing the glow curve of KMgF3:Lu fluoroperovskite compounds.