Fixed charge and interface traps at heterovalent interfaces between Si(1 0 0) and non-crystalline Al2O3–Ta2O5 alloys

Characterization by Auger electron spectroscopy (AES) and Fourier transformation infrared spectroscopy (FTIR) confirms (Ta₂O₅)_x(Al₂O₃)_1−x alloys are homogeneous pseudo-binary alloys with increased thermal stability with respect to end member oxides, Ta₂O₅ and Al₂O₃. Capacitance–voltage (C–V) and current density–voltage (J–V) data as a function of temperate show that the Ta d-states of the alloys act as localized electron traps, and are at an energy approximately equal to the conduction band offset of Ta₂O₅ with respect to Si.     

Electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on porous SiC substrate

Porous SiC (PSC) has been proposed as a buffer layer for reducing defects in epitaxial SiC layers. In this study, electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on a porous SiC substrate (SiC-on-PSC) have been compared to those simultaneously grown on a standard SiC substrate (SiC-on-STD). Schottky barrier diodes (SBDs) have been fabricated on both epitaxial layers and then investigated with temperature-dependent current-voltage (I-V), capacitance-voltage (C-V), and deep-level transient spectroscopy (DLTS) measurements. The SBDs on both SiC-on-PSC and SiC-on-STD show about the same I-V and C-V characteristics, and at least four electron traps, i.e., B (0.75 eV), C (0.63 eV), D (0.40 eV), and E (0.16 eV), can be identically found in both SBDs by DLTS measurements. Thus, we conclude that the electrical quality of SiC-on-PSC is comparable to that of SiC-on-STD, and that the higher breakdown voltages observed in SBDs on SiC-on-PSC are not obviously related to a different defect structure.     

Long-time asymptotics in the one-dimensional trapping problem with large bias

The survival probability of a particle which moves according to a biased random walk in a one-dimensional lattice containing randomly distributed deep traps is studied at large times. Exact asymptotic expansions are deduced for fields exceeding a certain threshold, using the method of images. In order to cover the whole range of fields, we also derive the behavior of the survival probability below this threshold, using the eigenvalue expansion method. The connection with the continuous diffusion model is discussed.     

X-ray excited fluorescence and phosphorescence of CaSO4: Sm phosphors

Calcium sulphate phosphors activated with samarium as an impurity with various percentage composition have been prepared and their fluorescence rise and phosphorescence decay behaviours have been studied. The growth curve is investigated to study the density of traps. The process of filling of traps during x-ray excitation is revealed. The decay curves are analysed to study the distribution of traps, the nature of decay and kinetics involved in the luminescence process. The concentration dependence of fluorescence emission of the phosphors is also discussed.     

一种改进的MOS器件热载流子退化模型

An improved hot carrier injection （HCI） degradation model was proposed based on interface trap generation and oxide charge injection theory. It was evident that the degradation behavior of electric parameters such as Idlin, Idsat, Gm and Vt fitted well with this model. Devices were prepared with 0.35μm technology and different LDD processes. Idlin and Idsat after HCI stress were analyzed with the improved model. The effects of interface trap generation and oxide charge injection on device degradation were extracted, and the charge injection site could be obtained by this method. The work provides important information to device designers and process engineers.     

Computational study of cold ions trapped in a double-well potential

We report a rigorous computational treatment of quantum dynamics of cold ions in a double-well trap using the time-dependent Schrödinger equation. Our method employs a numerically accurate approach that avoids approximations, such as assumption of weak coupling between the wells; normal mode nature of vibrations; or harmonic approximation for energy spectrum of the double-well system. Our goal is to reproduce, from first principles, the process of energy swaps between the wells observed in the experiments at NIST [Nature 471, 196 (2011)] and Innsbruck [Nature 471, 200 (2011)]. The model parameters and the initial conditions are carefully chosen to mimic experimental conditions. We obtain accurate energies and wave functions of the system numerically, and study the evolution of motional wave packets to provide new insight. This model reproduces experimental results obtained by NIST and Innsbruck in detail. We explain the energy transfer in terms of wave packet dynamics in the asymmetric potential energy well. We also show that, for a localised initial wave packet, this phenomenon can be interpreted using the terms of classical dynamics, such as trajectory of motion governed by the well-known simple principle: the angle of reflection equals the angle of incidence.     

DLTS and in situ C–V analysis of trap parameters in swift 50 MeV Li3+ ion-irradiated Ni/SiO2/Si MOS capacitors

Ni/SiO₂/Si MOS structures were fabricated on n-type Si wafers and were irradiated with 50 MeV Li³⁺ ions with fluences ranging from 1×10¹⁰ to 1×10¹² ions/cm². High frequency C–V characteristics are studied in situ to estimate the build-up of fixed and oxide charges. The nature of the charge build-up with ion fluence is analyzed. Defect levels in bulk Si and its properties such as activation energy, capture cross-section, trap concentration and carrier lifetimes are studied using deep-level transient spectroscopy. Electron traps with energies ranging from 0.069 to 0.523 eV are observed in Li ion-irradiated devices. The dependence of series resistance, substrate doping and accumulation capacitance on Li ion fluence are clearly explained. The study of dielectric properties (tan δ and quality factor) confirms the degradation of the oxide layer to a greater extent due to ion irradiation.