衬底温度对In掺杂CdO薄膜的结构和性能的影响

Transparent indium-doped cadmium oxide（In-CdO） thin films were deposited on quartz glass substrates by pulsed laser deposition（PLD） from an ablating Cd-In metallic target.The effect of substrate temperature on the structural,optical and electrical properties of In-doped CdO thin films were studied in detail.The optical transmittance of In doped CdO films are obviously influenced by the substrate temperature.All films exhibit a transmittance higher than 75%in the visible region.More significantly,In-doping leads to an evident widening of optical band gap from 2.56 to 2.91 eV;and the increase in optical band gap is found to depend on the deposition temperature.It is also seen that the electrical properties of these films strongly depend on the substrate temperature. The In-CdO thin film grown at 300℃has low resistivity(1.15×10^-4Ω·cm),high carrier concentration(5.35×10²⁰ cm^-3),and high mobility（101.43 cm²/（V·s））.     

Optoelectronic properties of expanding thermal plasma deposited textured zinc oxide: Effect of aluminum doping

Aluminum-doped zinc oxide films exhibiting a rough surface morphology are deposited on glass substrates utilizing expanding thermal plasma. Spectroscopic ellipsometry is used to evaluate optical and electronic film properties. The presence of aluminum donors in doped films is confirmed by a shift in the zinc oxide bandgap energy from 3.32 to 3.65 eV. In combination with transmission reflection measurements in the visible and NIR ranges, charge carrier densities, optical mobilities, and film resistivities have been obtained from the free carrier absorption. Film resistivities are consistent with direct measurements, values as low as 6.0×10⁻⁴ ω cm have been obtained. The interdependence of electrical conductivity, film composition, and film morphology is addressed.     

Effects of contact electrode size on the characteristics of polycrystalline-Si p-i-n solar cells

The effects of contact electrode size on the photo-voltaic characteristics of polycrystalline-Si p-i-n solar cells have been studied,with respect to a unit-cell pitch size of 1μm width.For the non-transparent Al contact electrode with a contact width of 0.05-0.2μm,the short-circuit current is obviously reduced with increasing contact width,due to a larger area of optical reflection by the electrode.On the other hand,even when using a transparent ITO(indium-tin-oxide) electrode,a larger width of contact e...     

基于透射型超表面的宽带线圆极化转换器设计

提出了一种工作在S波段和C波段的宽频透射型线-圆极化波转换器,其由五层超表面级联而成.超表面正面的金属拓扑结构为对称U形,背面为连续螺旋.当线极化波垂直入射时,所提出的线-圆极化转换器在2.5～5.6 GHz内插入损耗小于0.9 dB,透射波轴比小于3 dB,实验结果和仿真基本一致.该极化转换器可用于空间电磁波的极化转...     

Flexible and Transparent Electrochromic Displays with Simultaneously Implementable Subpixelated Ion Gel‐Based Viologens by Multiple Patterning

Electrochromic materials reversibly change colors by redox reactions depending on the oxidation states. To utilize electrochromic materials for active‐matrix display applications, an electrochromic display (ECD) requires simultaneous implementation of various colors and a fine‐pixelation process. Herein, flexible and transparent ECDs with simultaneously implementable subpixelated EC gels by sequential multiple patterning are successfully demonstrated. Ionic liquid‐based EC gels of monoheptyl‐viologen, diheptyl‐viologen (DHV), and diphenyl‐viologen (DPV) are used to create the colors of ECDs: magenta, blue, and green, respectively. Especially, to realize an improved green color, DHV–DPV composite gels are synthesized. Three EC gels exhibit stable properties without degradation during repetitive operation. Moreover, a transmittance greater than 90% is maintained in a bleached state, which is sufficient for application as a transparent display. The subpixelation process for multicolored‐flexible ECDs is designed to facilitate both easy fabrication and rapid operation with various patterns at low cost. The subpixelated EC gels using a film mask can be implemented to a minimum size of 200 µm. Furthermore, the subpixelated flexible ECDs exhibit high durability even after 1000 cycles of mechanical bending tests at a bending radius of 10 mm. Therefore, these EC materials can be used directly for flexible and transparent active‐matrix displays.     

数字校园中管理信息系统安全体系结构设计与应用研究

针对高校管理信息系统面临的安全威胁和挑战,提出了1C4GS安全体系结构,阐述了1C4GS的5个重要组成部分：安全管理中心、安全通信网络、安全区域边界、安全计算环境及安全应用系统的内涵和作用。以数字校园典型案例——“个人基本事项申报系统”为例,构建了基于1C4GS的高校管理信息系统安全应用方案,对包括透明数据加密,用户身份鉴别,表单编辑缓存在内的多种安全技术和策略进行了有机整合,实现了管理信息系统的网络安全、边界安全、计算环境安全和应用系统安全。     

Highly Robust Indium‐Free Transparent Conductive Electrodes Based on Composites of Silver Nanowires and Conductive Metal Oxides

A hybrid approach for the realization of In‐free transparent conductive layers based on a composite of a mesh of silver nanowires (NWs) and a conductive metal‐oxide is demonstrated. As metal‐oxide room‐temperature‐processed sol–gel SnO_x or Al:ZnO prepared by low‐temperature (100 °C) atomic layer deposition is used, respectively. In this concept, the metal‐oxide is intended to fuse the wires together and also to “glue” them to the substrate. As a result, a low sheet resistance down to 5.2 Ω sq^‐1 is achieved with a concomitant average transmission of 87%. The adhesion of the NWs to the substrate is significantly improved and the resulting composites withstand adhesion tests without loss in conductivity. Owing to the low processing temperatures, this concept allows highly robust, highly conductive, and transparent coatings even on top of temperature sensitive objects, for example, polymer foils, organic devices. These Indium‐ and PEDOT:PSS‐free hybrid layers are successfully implemented as transparent top‐electrodes in efficient all‐solution‐processed semitransparent organic solar cells. It is obvious that this approach is not limited to organic solar cells but will generally be applicable in devices which require transparent electrodes.     

Solution Processing Route to Multifunctional Titania Thin Films: Highly Conductive and Photcatalytically Active Nb:TiO2

This paper reports the synthesis of highly conductive niobium doped titanium dioxide (Nb:TiO₂) films from the decomposition of Ti(OEt)₄ with dopant quantities of Nb(OEt)₅ by aerosol‐assisted chemical vapor deposition (AACVD). Doping Nb into the Ti sites results in n‐type conductivity, as determined by Hall effect measurements. The doped films display significantly improved electrical properties compared to pristine TiO₂ films. For 5 at.% Nb in the films, the charge carrier concentration was 2 × 10²¹ cm^?3 with a mobility of 2 cm² V^–1 s^–1 . The corresponding sheet resistance is as low as 6.5 Ω sq^–1 making the films suitable candidates for transparent conducting oxide (TCO) materials. This is, to the best of our knowledge, the lowest reported sheet resistance for Nb:TiO₂ films synthesized by vapour deposition. The doped films are also blue in colour, with the intensity dependent on the Nb concentration in the films. A combination of synchrotron, laboratory and theoretical techniques confirmed niobium doping into the anatase TiO₂ lattice. Computational methods also confirmed experimental results of both delocalized (Ti⁴⁺) and localized polaronic states (Ti³⁺) states. Additionally, the doped films also functioned as photocatalysts. Thus, Nb:TiO₂ combines four functional properties (photocatalysis, electrical conductivity, optical transparency and blue colouration) within the same layer, making it a promising alternative to conventional TCO materials.     

薄膜太阳电池用改进型绒面结构MOCVD-ZnO:B透明导电薄膜研究

利用低压MOCVD技术在玻璃衬底上生长了改进型绒面结构ZnO:B薄膜。改进型ZnO:B薄膜包含两层薄膜,第一层采用传统工艺技术生长了类金字塔状晶粒,第二层借助相对低温生长技术获得了类球状晶粒。典型的双层生长技术获得的MOCVD-ZnO:B薄膜具有相对高的电子迁移率~27.6 cm2/Vs,主要归因于提高了晶界质量,减少了缺陷态。随着第二层修饰层厚度的增加,MOCVD-ZnO:B薄膜的绒度提高,而光学透过率有所下降。相比于传统工艺生长的ZnO薄膜,双层结构的MOCVD-ZnO:B薄膜应用于硅基薄膜太阳电池展现了较高的太阳电池转化效率。     

数字梯度敏感法测量PMMA板裂纹尖端的应力强度因子

用数字梯度敏感法(DGS)测量了聚甲基丙烯酸甲酯(PMMA)板的张开型应力强度因子(SIF)。用DGS方法测量了PMMA板裂纹附近应力集中区的应力梯度(或偏转角)。此方法先用数字图像相关法(DIC)测量了透明试件裂纹尖端附近的全场位移,再根据光弹效应获得光线在透明固体应力集中区的全场偏转角,在平面应力条件下,偏转角可以与应力梯度建立联系从而获得应力集中区的应力梯度。由应力梯度场测量了裂纹尖端的应力强度因子。在应力强度因子的求解过程中提出了一种迭代最小二乘拟合应力梯度场的方法,此方法可同时得出应力强度因子与裂纹尖端位置。将实验结果与理论值进行了比较,结果显示数字梯度敏感方法准确地测量了复合型应力强度因子。