The electron microscopy of post-growth induced defects of ZnSe/GaAs epilayers

A fundamental research of structural defects induced upon post-growth processing of ZnSe/GaAs epilayers grown on (100) GaAs was done by identifying defect-related reflections in the transmission electron diffraction (TED) patterns of ZnSe. Structural artifacts, other than the as-grown defects, on this material system could be excluded according to our results. Four types of abnormal reflections have been observed in addition to primary reflections. These extra reflections are sensitive to the post-growth processing of ZnSe epilayers and may arise from various external effects, rather than epitaxy growth, such as irradiation damage, surface oxidation, and surface contamination. By mapping these reflections at several major zone axes using TED patterns, we found that the reciprocal lattice for a ZnSe crystal with structural defects consists of two distinct types of extra reflections associated with irradiation damage. The first type of extra reflections is ±1/3{111} and the other is ±1/2{111} corresponding to pure-edge and non-edge dislocation loops, respectively. For (100) oriented wafers, the ±1/3{111} and ±1/2{111} reflections were observed only on two of the four possible 〈111〉 variants (i.e. [111]_Zn and [111]_Zn)and this phenomenon was attributed to the anisotropy of defect distribution. Extra reflections associated with surface oxidation and contamination are also observed. The orientation relationships between a surface hexagonal ZnO and a cubic ZnSe film are [0001]_ZnO//[−111]_ZnSe, and [01−11]_ZnO//[011]_ZnSe. The origin, characterization, and elimination of these induced reflections are discussed. With the knowledge about these extra effects on structural defect formation, we have shown the real microstructure of ZnSe epilayers.     

MOCVD生长的GaN单晶膜透射光谱研究

采用MOCVD技术在Al2O3(0001)衬底上生长了GaN薄膜，使用透射光谱、光致发光光谱和X射线双晶衍射三种技术测试了五类GaN薄膜样品，实验结果表明：GaN薄膜透射谱反映出的GaN质量与X射线双晶衍射测量的结果一致，即透射率越大，半高宽越小，结晶质量越好；而X射线双晶衍射峰半高宽最小的样品，其PL谱的带边峰却很弱，这说明PL谱反映样品的光学性能与X射线双晶衍射获得的结晶质量不存在简单的对应关系，同时还报导了一种特殊工艺生长的高阻GaN样品的RBS／沟道结果。     

Synthesis,characterization, and electrical properties of polypyrrole/multiwalled carbon nanotube composites

Size‐controllable polypyrrole (PPy)/multiwalled carbon nanotube (MWCNT) composites have been synthesized by in situ chemical oxidation polymerization directed by various concentrations of cationic surfactant cetyltrimethylammonium bromide (CTAB). Raman spectra, FTIR, SEM, and TEM were used to characterize their structure and morphology. These results showed that the composites are core (MWCNT)–shell (PPy) tubular structures with the thickness of the PPy layer in the range of 20–40 nm, depending on the concentration of CTAB. Raman and FTIR spectra of the composites are almost identical to those of PPy alone. The electrical conductivities of these composites are 1–2 orders of magnitude higher than those of PPy without MWCNTs. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 6449–6457, 2006     

A coincidence transmission electron microscope with digital waveform measuring system for analytical microscopy

We have been developing a new analytical transmission electron microscope (TEM), called a coincidence TEM, which in principle enables elemental mapping images to be observed at a high signal‐to‐noise (S/N) ratio under very low dose radiation conditions. In this paper, we report the development of a coincidence TEM with a digital waveform measuring system for obtaining a coincidence elemental mapping image. In this system, analog signals detected by a Si(Li) detector and a multianode, position‐sensitive photomultiplier (PSPM) are continuously converted into 12‐bit digital waveform data at a rate of 100 MHz, and transferred to a PC. From the transferred digital waveform data, information on X‐ray photon energy, electron incident position, and detection times of both X rays and electrons are calculated by digital waveform measurement, which lead to the observation of a successful coincidence elemental mapping image. Copyright © 2005 John Wiley & Sons, Ltd.     

The Micro-Theory of Ultra-Short Pulse Propagating in Nonlinear Fiber

The modified quantum nonlinear Schrodinger equation of ultra-short pulse propagating in fiber is derived using dispersion relation and the Hamiltonian of the transmission system. The derived equation is solved with linearization approximation, and modulation instability is analyzed. The equation is also solved with Hartree approximation. The results indicate that pulse power, loss and self-steeping effect change the critical frequency, the maximum gain and the gain spectrum range, but the third order dispersion has no effect on modulation instability. The expectation value of optical field is average of a set of modified classical solitons, and higher order terms change the amplitude, pulse position and phase of soliton.     

Electron microscope studies of InxGav1−xAs/GaAs/Si grown by metalorganic chemical vapor deposition

The microstructure of In_xGa_1−xAs/GaAs (5 nm/5 nm, x < 0 to 1.0), as grown by a metalorganic chemical vapor deposition two-step growth technique on Si(100) at 450‡C, and subsequently annealed at 750‡C, is investigated using plan-view and cross-sectional transmission electron microscopy. The variations in resultant island morphology and strain as a function of the In content were examined through the comparison of the misfit dislocation arrays and moirés observed. The results are discussed in relation to the ways in which the island relaxation process changes for high In content.     

用透射积分法研究的穆斯堡尔谱学——一个在聚合二茂铁研究中的应用

本文利用透射积分法，在聚合二茂铁研究中发现，这种方法不但能够得到超精细参数，而且能够得到一般拟合方法得不到的另外两个重要参数—样品的无反冲分数和相应的德拜温度，由此能进一步了解到样品在结合中晶格的质量及化学键的强弱，为穆斯堡尔谱研究提供了一条新的途径。     

Chemical Reactions in the Manufacture of Waveguides for Long Distance Optical Data Transmission

One of the modern high technologies which has advanced enormously in the last few years is glass fiber technology. This is used in the manufacture of glass fibers for lighting purposes and for the optical transfer of analog and digital data with a high transfer density. The technical demands made on the glass fibers required for data transfer, the optical waveguides, are extremely high and are already fulfilled to a large extent by industry. At present about four million kilometers of fiber, worth ca. 800 million DM are produced worldwide (10% in the Federal Republic of Germany). Numerous chemical processes take place during the manufacture of optical waveguides. However, in contrast both to the high and constantly growing demands on the quality and to the increasing production volume of such fibers, little is in fact known about the reactions involved. The present article will attempt to develop a picture of the multifarious reactions occurring in the course of this technical process on the basis of literature data and our own studies.     

Influence of the conditions of manufacture of nanomeric zirconium dioxide,stabilized with yttrium oxide,on its catalytic properties in the oxidation of CO

The morphological and catalytic properties of samples of nanomeric zirconium dioxide, stabilized with yttrium oxide, manufactured via the effect of a UHF field during the process of drying precipitated zirconium hydroxide and calcination at temperatures from 300 to 1000 °C, were studied. It was shown that the highest activity in the oxidation of CO occurred with 40 nm particles of zirconium dioxide prepared at 1000 °C. __________ Translated from Teoreticheskaya i éksperimental’naya Khimiya, Vol. 43, No. 2, pp. 96–101, March–April, 2007.