气源MBE外延自组装GeSi量子点光致荧光研究

利用气源分子束外延设备（MBE）制作了GeSi自组装量子点样品。利用原子力显微镜（AFM）和光致荧光（PL）光谱研究了量子点的形貌和光学性质。气源MBE在较低温度下生长的量子点材料具有较高的量子点覆盖度。200K以下载流子以局域激子形式束缚在量子点中,激子束缚能约为17meV。升温至200K,载流子的输运过程发生变化。对量子点PL积分强度与温度关系曲线进行拟合得到量子点中空穴跃迁至浸润层的热激活能为129meV。     

Robust Preparation of Atomic Concatenated Greenberger–Horne–Zeilinger States via Shortcuts to Adiabaticity

Here, a protocol for robust preparation of an atomic concatenated Greenberger–Horne–Zeilinger (C‐GHZ) state via shortcuts to adiabaticity (STA) is proposed. The devices for implementing the protocol consist of atoms, cavities, and the optical fibers, which are feasible with current technology. The atoms are trapped in the separated cavities allowing individual control over each atom with classical fields. STA helps to design Rabi frequencies of classical fields so that the atoms can be driven from the initial states to the target states. The numerical simulations show that the protocol holds robustness against atomic spontaneous emissions and photonic leakages. Thus, the protocol may be realized by experiments in the near future.     

基于单片机的低频任意信号发生器

以单片机为核心设计了一个低频函数信号发生器。信号发生器采用数字波形合成技术,通过硬件电路和软件程序相结合,可输出自定义波形,如正弦波、方波、三角波及其他任意波形。波形的频率和幅度在一定范围内可任意改变。介绍了波形的生成原理、硬件电路和软件部分的设计原理。介绍了单片机控制D／A转换器产生上述信号的硬件电路和软件编程、DAC0832D／A转换器的原理和使用方法、AT89C52以及与设计电路有关的各种芯片、关于产生不同低频信号的信号源的设计方案。该信号发生器具有体积小、价格低、性能稳定、功能齐全的优点。     

一种轨对轨CMOS运算放大器的设计

基于0.6μmCMOS工艺,设计了一种轨对轨运算放大器。该运算放大器采用了3.3V单电源供电,其输入共模范围和输出信号摆幅接近于地和电源电压,即所谓输入和输出电压范围轨对轨。该运放的小信号增益为77dB,单位增益带宽为4.32MHz,相位裕度为79°。由于电路简单,工作稳定,输入输出线性动态范围宽,非常适合于SOC芯片内集成。     

二平行传输线间的串扰分析

对其地平行传输线间的串扰耦合进行分析,得出耦合响应与信号频率、线间距及线距地高度的关系,给出了电子电路设计中传输布设的原则。并对PCB布线提出参考。     

基于极化不变量特征的雷达目标识别技术

极化是雷达目标具有的特性之一。以电磁散射计算仿真的圆锥形弹头模型、球形和圆柱形诱饵模型为研究对象,在极化不变量理论基础上对这些简单目标的极化特性进行了试验分析研究,提出了一种新的组合极化不变量特征(功率矩阵迹与行列式的比值)用于雷达目标识别,并给出了其对应实际的物理意义。文中以SVM为分类器,提出基于功率矩阵迹、去极化系数和功率矩阵迹与行列式的比值特征进行分类识别,结果表明,该方法可以有效地将弹头和诱饵进行分类识别。     

Surface activation using oxygen and nitrogen radical for Ge-Si Avalanche photodiode integration

In this work, an alternative method for producing the single crystalline Ge-Si Avalanche photodiodes (APD) with low thermal budget was investigated. Structural and electrical investigations show that low temperature Ge to Si wafer bonding can be used to achieve successful APD integration. Based on the surface chemistry of the Ge layer, the buried interfaces were investigated using high resolution transmission electron microscopy as a function of surface activation after low temperature annealing at 200 and 300 °C. The hetero-interface was characterized by measuring forward and reverse currents.     

液晶显示驱动电路中Fibonacci型电荷泵单元

本文中所设计的电荷泵将用于手机液晶显示驱动模块中.通过对Fibonacci型电荷泵上升时间的估算,对减小上升时间和动态功耗进行折中考虑,本文提出优化开关频率的方法.用1.2μm CMOS双阱工艺参数对所设计的电荷泵进行模拟,结果表明这个电荷泵具有较快的上升速度和较高的效率.通过提高V_GS电平和保证开关管的衬底始终接在最高电位上,文中提出了一种新型Fibonacci电荷泵,它可以正常工作在从1.2V到5V变化的多种电源电压下.     

标准算子代数上保因子交换性的映射

Let X, Y be real or complex Banach spaces with dimension greater than 2 and A, B be standard operator algebras on X and Y, respectively. Let φ ：A →B be a unital surjective map. In this paper, we characterize the map φ on .4 which satisfies （A - B）R = R（A-B） ξR （（A-B）→ （φ（B））φ（R） =φ（R）（（A）- （B）） for A, B, R E .4 and for some scalar     

Mixing time of an unaligned Gibbs sampler on the square

The paper concerns a particular example of the Gibbs sampler and its mixing efficiency. Coordinates of a point are rerandomized in the unit square ${[0,1]}^2$ to approach a stationary distribution with density proportional to $exp(?A^2{(u?v)}^2)$ for $(u,v)\in {[0,1]}^2$ with some large parameter $A$.Diaconis conjectured the mixing time of this process to be $O\left(A^2\right)$ which we confirm in this paper. This improves on the currently known $O(exp\left(A^2\right))$ estimate.