锐钛矿二氧化钛超细纳米晶的三声子互作用

本文通过对粒径为2.2-25.5nm的锐钛矿二氧化钛超细纳米晶在83-293 K温度范围内的变温拉曼光谱的研究,得到了三声子互作用对拉曼频率和线宽的贡献随粒径的变化关系。结果表明锐钛矿二氧化钛超细纳米晶的三声子相互作用随粒径减小而加强。     

光码分多址系统中光学相关接收机判决阈值的分析

介绍了光码分多址系统中常用地址码（一维扩时码、二维码和三维码）的特点，并对它们各自的互相关均值和方差进行了理论分析。基于非相干光码分多址系统中光学相关接收机的基本原理，结合不同的用户地址码，对系统误码率性能进行了分析，得到了接收机最佳判决阈值与地址码基本特性参数和系统同时用户数间的关系。最后，给出了数值仿真结果。结果表明，对于采用特定地址码的光码分多址系统，只有选择合适的接收机判决阈值，系统的误码率性能才能达到最佳。研究结果对光码分多址系统中接收机判决阈值的选取具有一定的参考作用。     

非傍轴平顶高斯光束M2因子两种定义的比较研究

基于功率密度的二阶矩方法，推导出了非傍轴平顶高斯(FG)光束束宽和远场发散角的解析表达式.研究表明，当w0/λ→0时，远场发散角趋于渐近值θmax=63.435°，与阶数无关.使用非傍轴高斯光束代替傍轴高斯光束作为理想光束，研究了非傍轴FG光束的M2因子，并与传统定义的M2因子作了比较.在非傍轴范畴，非傍轴FG光束的M2因子不仅与阶数N有关，而且与w0/λ有关.按照定义，当w0/λ→0时，非傍轴FG光束的M2因子不等于0，对阶数N=1, 2, 3时，M2因子分别趋于0.913,0.882和0.886.当N→∞时，M2因子取最小值M2min=0.816.     

Growth studies of m-GaN layers on LiAlO2 by MOCVD

This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.     

Fibrations of bigroupoids

Using Brown's construction (J. Algebra 15 (1970) 103) of an exact 6-term sequence for a fibration of groupoids we show how an exact 9-term sequence can be associated to a fibration of bigroupoids. Applications to topology and algebra are given.     

Linear and nonlinear optical susceptibilities of orthorhombic rare earth molybdates RE2(MoO4)3

The dielectric responses (i.e. the refractive indices and the second order nonlinear susceptibilities) of all orthorhombic rare earth molybdates have been studied on the basis of the relationship between dielectric responses and the average atomic number of constituent atoms of crystals. Both the linear and second order nonlinear optical responses at 1.064 μm decrease with increasing atomic number from La to Lu.     

Relationship between chemical bond parameters and superconducting temperature in HgBa2Can−1CunO2n+2+δ (n=1, 2, 3, 4)

Bond covalency and valence of elements in HgBa₂Ca_n−1Cu_nO_2n+2+δ (n=1, 2, 3, 4) were calculated and their relationship with T_c was discussed. For both oxygen and argon annealed samples, the results indicated that with the increase of n, the trend of bond covalency of Hg-O and Cu-O was the same or opposite compared with that of superconducting temperature. This may suggest that the magnitudes of Cu-O and Hg-O bond covalency are important in governing the superconducting temperature. For the highest T_c sample, Hg had the lowest valence, implying that lower valence of Hg was preferred in order to produce higher T_c. For fixed n, the valence of Cu in oxygen annealed samples was larger than that in argon annealed samples, indicating that oxygen annealed samples produced more carriers than argon annealed samples.     

Frequency dependence of ionic conductivity and dielectric relaxation studies in Na3H(SO4)2 single crystal

Electrical impedance measurements of Na₃H(SO₄)₂ were performed as a function of both temperature and frequency. The electrical conductivity and dielectric relaxation have been evaluated. The temperature dependence of electrical conductivity reveals that the sample crystals transformed to the fast ionic state in the high temperature phase. The dynamical disordering of hydrogen and sodium atoms and the orientation of SO₄ tetrahedra results in fast ionic conductivity. In addition to the proton conduction, the possibility of a Na⁺ contribution to the conductivity in the high temperature phase is proposed. The frequency dependence of AC conductivity is proportional to ω^s. The value of the exponent, s, lies between 0.85 and 0.46 in the room temperature phase, whereas it remains almost constant, 0.6, in the high-temperature phase. The dielectric dispersion is examined using the modulus formalism. An Arrhenius-type behavior is observed when the crystal undergoes the structural phase transition.     

Temperature and junction-type dependency of Andreev reflection in MgB2

We studied the voltage and temperature dependency of the dynamic conductance of normal metal-MgB₂ junctions obtained either with the point-contact technique (with Au and Pt tips) or by making Ag-paint spots on the surface of MgB₂ samples. The fit of the conductance curves with the generalized BTK model gives evidence of pure s-wave gap symmetry. The temperature dependency of the gap, measured in Ag-paint junctions (dirty limit), follows the standard BCS curve with 2Δ/k_BT_c=3.3. In out-of-plane, high-pressure point-contacts we obtained almost ideal Andreev reflection characteristics showing a single small s-wave gap Δ=2.6±0.2 meV (clean limit).     

In situ neutron diffraction study (300-1273 K) of non-stoichiometric strontium ferrite SrFeOx

The high-temperature cubic phase of non-stoichiometric strontium ferrite SrFeO_x (2.5≤x≤3.0) has been studied by in situ neutron powder diffraction in air over the temperature range 300-1273 K. The composition of SrFeO_x changes within the range 2.56≤x≤2.81 from 1273 to 673 K, respectively.Rietveld refinements of the diffraction patterns show that the high-temperature cubic phase of SrFeO_x is consistent with a face-centred Fm3c structure. This structure leads to agreement with previous density measurements. This cell allows the high-temperature structure of SrFeO_x to be described in terms of a solid solution of the composition end members. Cubic SrFeO_x at high temperature is found to closely obey Vegard's law. The density of cubic SrFeO_x is also found to exhibit a linear relationship with composition.