阴极还原处理对多孔硅发光性能的影响

对经过阴极还原处理后的多孔硅样片进行了光致发光测试和稳定性测试.实验结果表明这种处理能明显改善多孔硅的发光稳定性,使其表面结构更加稳定.利用原子力显微镜对不同还原时间的多孔硅微结构及形貌进行了比较,在一定范围内随着还原时间的增长多孔硅表面粗糙度增大,PL谱增强.     

激光结晶a-Si:H SOI离子注入和快速退火

本文对激光结晶a-Si∶H SOI结构砷注入和快速退火行为作了研究.a-Si∶H激光结晶有Lp-LCR,OD,FCR-2,FCR-1四个结晶区.用剖面电镜观察了结晶区的结构.扩展电阻测量表明Lp-LCR区中有两种扩散机制,即杂质在晶粒体内扩散和沿缺陷扩散.OD区中有三种扩散形式,除有上述两种以外,还有沿缺陷的扩散.首次比较了沿晶界和缺陷的扩散速度.     

Amorphous chromium silicide formation in hydrogenated amorphous silicon

The interaction between thin films of hydrogenated amorphous silicon and sputter-deposited chromium has been studied. Following deposition of the chromium films at room temperature, the films were annealed over a range of times and temperatures below 350°C. It was found that an amorphous silicide was formed only a few nanometers thick with the square of thickness proportional to the annealing time. The activation energy for the process was 0.55±0.05 eV. The formation process of the silicide was very reproducible with the value of density derived from the thickness and Cr surface density being close to the value for crystalline CrSi₂ for all films formed at temperatures ≤300°C. The specific resistivity of the amorphous CrSi₂ was ≈600 μΩ·cm and independent of annealing temperature.     

Effect of epitaxial realignment on the leakage behavior of arsenic-implanted,as-deposited polycrystalline Si-on-single crystal Si diodes

When dopants are indiffused from a heavily implanted polycrystalline silicon film deposited on a silicon substrate, high thermal budget annealing can cause the interfacial “native” oxide at the polycrystalline silicon-single crystal silicon interface to break up into oxide clusters, causing epitaxial realignment of the polycrystalline silicon layer with respect to the silicon substrate. Anomalous transient enhanced diffusion occurs during epitaxial realignment and this has adverse effects on the leakage characteristics of the shallow junctions formed in the silicon substrate using this technique. The degradation in the leakage current is mainly due to increased generation-recombination in the depletion region because of defect injection from the interface.     

非晶硅基薄膜的等离子体刻蚀光发射谱检测

本文研究了采用锁定放大相干检测技术的等离子体光发射谱检测系统。用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。分析了检测结果和刻蚀机理。     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

a—Si等离子体刻蚀的研究

将等离子体刻蚀应用于非晶硅的刻蚀中,得到边缘整齐、分辩率高、重复性好、图形清晰的满意效果。通过调整工艺条件,可严格控制刻蚀速率。其特点优于湿式化学腐蚀,是一种非晶硅特性研究和器件制造中值得推广和使用的方法。     

硅中硼离子注入校准样品的研制

本文主要介绍了硅中硼离子注入校准样品的制备与研究。分别用三台SIMS仪器对样品进行了深度剖析与比对,并对用作校准目的的样品主要参数进行了定值。     

Formation of titanium and cobalt germanides on Si (100) using rapid thermal processing

Titanium and cobalt germanides have been formed on Si (100) substrates using rapid thermal processing. Germanium was deposited by rapid thermal chemical vapor deposition prior to metal evaporation. Solid phase reactions were then performed using rapid thermal annealing in either Ar or N₂ ambients. Germanide formation has been found to occur in a manner similar to the formation of corresponding silicides. The sheet resistance was found to be dependent on annealing ambient (Ar or N₂) for titanium germanide formation, but not for cobalt germanide formation. The resistivities of titanium and cobalt germanides were found to be 20 μΩ-cm and 35.3μΩ-cm, corresponding to TiGe₂ and Co₂Ge, respectively. During solid phase reactions of Ti with Ge, we have found that the Ti₆Ge₅ phase forms prior to TiGe₂. The TiGe₂ phase was found to form approximately at 800° C. Cobalt germanide formation was found to occur at relatively low temperatures (425° C); however, the stability of the material is poor at elevated temperatures.