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41.
利用变温和变磁场霍尔测试对在空气室温环境长期存放的碲镉汞液相处延晶膜作了定期的检测,结果表明,晶膜的电学性质随时间有明显的改变,本文采用非均匀晶膜的层状模型对晶膜的不稳定性作了详细的分析。 相似文献
42.
A fundamental research of structural defects induced upon post-growth processing of ZnSe/GaAs epilayers grown on (100) GaAs
was done by identifying defect-related reflections in the transmission electron diffraction (TED) patterns of ZnSe. Structural
artifacts, other than the as-grown defects, on this material system could be excluded according to our results. Four types
of abnormal reflections have been observed in addition to primary reflections. These extra reflections are sensitive to the
post-growth processing of ZnSe epilayers and may arise from various external effects, rather than epitaxy growth, such as
irradiation damage, surface oxidation, and surface contamination. By mapping these reflections at several major zone axes
using TED patterns, we found that the reciprocal lattice for a ZnSe crystal with structural defects consists of two distinct
types of extra reflections associated with irradiation damage. The first type of extra reflections is ±1/3{111} and the other
is ±1/2{111} corresponding to pure-edge and non-edge dislocation loops, respectively. For (100) oriented wafers, the ±1/3{111}
and ±1/2{111} reflections were observed only on two of the four possible 〈111〉 variants (i.e. [111]Zn and [111]Zn)and this phenomenon was attributed to the anisotropy of defect distribution. Extra reflections associated with surface oxidation
and contamination are also observed. The orientation relationships between a surface hexagonal ZnO and a cubic ZnSe film are
[0001]ZnO//[−111]ZnSe, and [01−11]ZnO//[011]ZnSe. The origin, characterization, and elimination of these induced reflections are discussed. With the knowledge about these
extra effects on structural defect formation, we have shown the real microstructure of ZnSe epilayers. 相似文献
43.
酞菁钴薄膜的折射率及吸收特性 总被引:3,自引:1,他引:2
通过真空镀法在单晶硅片上制备了酞菁钴薄膜,在波长扫描和入射角可变全自动椭圆偏振光谱仪上研究了CoPc薄膜的椭偏光谱并分析了其电子结构。 相似文献
44.
金属迁移能导致混合微电路发生灾难性失效。本文介绍一种简单易行的测试方法-水滴试验法,来测量厚膜电路的实际金属迁移率。用引方法测量时,发现Pd-Ag导体的迁移率最大,Pt-Au导体的金属迁移率最小。 相似文献
45.
Journal of Electronic Materials - Low pressure chemical vapor deposition (LPCVD) of tungsten (W) by SiH4 reduction of WF6 on Si(100) surfaces was studied in a single-wafer, cold-wall reactor over a... 相似文献
46.
47.
Hee Seok Choi Young Han Kim Shun Myung Shin 《Journal of polymer science. Part A, Polymer chemistry》2006,44(8):2428-2439
An in‐line monitoring device using a quartz crystal resonator for thin film polymerization was proposed, and its performance has been evaluated by implementing in the UV polymerization of 2‐hydroxyethyl methacrylate with a photoinitiator of 1‐chloroanthraquinone. Because the variation of resonant resistance of the resonator is proportional to the square root of viscosity change that is closely related to the polymerization degree, the resistance can be used as a measure of the polymerization degree. The resistance measurements were compared with the outcome of instrumental analyses of polymerization degree using an FTIR spectrometer and a gel permeation chromatograph. The experimental results showed that the resistance measurements were consistent with the experimental outcome of the instrumental analyses, and this indicates the effectiveness of the proposed device. Owing to the simplicity and availability of the resonator system, its wide utilization in the monitoring of a variety of film polymerization processes, including photoresistor application, is expected. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 2428–2439, 2006 相似文献
48.
H. Huth A. A. Minakov C. Schick 《Journal of polymer science. Part A, Polymer chemistry》2006,44(20):2996-3005
A differential AC-chip calorimeter capable of measuring the step in heat capacity at the glass transition in nanometer-thin films is described. Because of the differential setup, pJ/K sensitivity is achieved. Heat capacity can be measured for sample masses below 1 ng in broad temperature range as needed for the study of the glass transition in nanometer-thin polymeric films. Relative accuracy is sufficient to investigate the changes in heat capacity as the step at the glass transition of polystyrene. The step is about 25% of the total heat capacity of polystyrene. The calorimeter allows for the frequency dependent measurement of complex heat capacity in the frequency range from 1 Hz to 1 kHz. The glass transition in thin polystyrene films (50–4 nm) was determined at well-defined experimental time scales. No thickness dependency of the glass transition temperature was observed within the error limits (±3 K)—neither at constant frequency (40 Hz) nor for the trace in the activation diagram (1 Hz–1 kHz). © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 2996–3005, 2006 相似文献
49.
Takahiro Gunji Ryosuke Shimano Koji Arimitsu Yoshimoto Abe 《Journal of polymer science. Part A, Polymer chemistry》2006,44(8):2542-2550
Tetraethoxysilane (TEOS) and polyethoxysiloxanes (PEOSs; prepared by the acid‐catalyzed hydrolytic polycondensation of TEOS) were subjected to the sol–gel process in the presence of cetyltrimethylammonium bromide (CTAB), respectively. The PEOSs with Mw 700–26,000, as prepared by sol–gel coating of TEOS and PEOS under various conditions, were used. Uniform and crack‐free thin films of thickness 276–613 nm were prepared by spin‐coating of a PEOS solution containing CTAB. When the coating films were sintered at 400 °C, the combustion of ethoxy groups and CTAB took place to provide porous silica thin films. The structure of the thin films was found to be dependent on the molecular weight of PEOS and the molar ratio of CTAB/Si: lamellar or hexagonal phase was observed for Mw less than 15,000 and for CTAB/Si molar ratios greater than 0.10. Honeycomb structures were observed for Mw less than 5000 and for CTAB/Si molar ratios of 0.15. The honeycomb structure was also observed by atomic force microscopy and transmission electron microscope. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 2542–2550, 2006 相似文献
50.
本文研究了SiH4—O2体系LPCVDSiO2的工艺及设备。为了得到厚度均匀性好的薄膜,改进了反应气体的进气方式和装片舟的结构,获得了每炉100片、直径为100mm的硅片的膜厚不均匀性≤士5%的结果。 相似文献