Strategic commitment to price to stimulate downstream innovation in a supply chain

It is generally in a firm’s interest for its supply chain partners to invest in innovations. To the extent that these innovations either reduce the partners’ variable costs or stimulate demand for the end product, they will tend to lead to higher levels of output for all of the firms in the chain. However, in response to the innovations of its partners, a firm may have an incentive to opportunistically increase its own prices. The possibility of such opportunistic behavior creates a hold-up problem that leads supply chain partners to underinvest in innovation. Clearly, this hold-up problem could be eliminated by a pre-commitment to price. However, by making an advance commitment to price, a firm sacrifices an important means of responding to demand uncertainty. In this paper we examine the trade-off that is faced when a firm’s channel partner has opportunities to invest in either cost reduction or quality improvement, i.e. demand enhancement. Should it commit to a price in order to encourage innovation, or should it remain flexible in order to respond to demand uncertainty. We discuss several simple wholesale pricing mechanisms with respect to this trade-off.     

基于突变论的林火蔓延分析

在对森林火灾进行能量和质量守恒分析的基础上,把尖点突变模型应用于森林火灾蔓延的预测,使突变理论在 森林火灾的模型中从理论上有了初步的应用。文中计算了林火发生突变时的一些分歧点,分析了林火突变的特点和变化规 律。     

Micromechanisms and Mechanics of Damage and Fracture in Thin Film/Substrate Systems

The purpose of this paper is to review the mechanisms and available theoretical methods for modeling the strength and failure of thin film/substrate systems     

Positive value of information in games

We exhibit a general class of interactive decision situations in which all the agents benefit from more information. This class includes as a special case the classical comparison of statistical experiments à la Blackwell. AMS 2000 Subject Classification:Primary 91A35.The work of Bruno Bassan and Marco Scarsini was partially supported by MIUR-COFIN. The authors express their thanks to Sylvain Sorin for enlightening comments.     

Lattice path combinatorics and asymptotics of multiplicities of weights in tensor powers

We give asymptotic formulas for the multiplicities of weights and irreducible summands in high-tensor powers V_λ^⊗N of an irreducible representation V_λ of a compact connected Lie group G. The weights are allowed to depend on N, and we obtain several regimes of pointwise asymptotics, ranging from a central limit region to a large deviations region. We use a complex steepest descent method that applies to general asymptotic counting problems for lattice paths with steps in a convex polytope.     

Weighted approximation of functions on the real line by Bernstein polynomials

The authors give error estimates, a Voronovskaya-type relation, strong converse results and saturation for the weighted approximation of functions on the real line with Freud weights by Bernstein-type operators.     

Evaluation of quadrature schemes for the discrete ordinates method

After reviewing the presently available quadrature schemes for the discrete ordinates method, the accuracy of different schemes is analyzed and evaluated. It is shown from a comprehensive error analysis that the moment conditions have to satisfied not only for the principal coordinates directions, as it is mostly carried out, but for any arbitrary test direction. Among the schemes with approximately 50 discrete ordinates the DCT-020-2468 quadrature was found to give the best accuracy. The highest accuracy among all schemes is achieved by the LC-11 quadrature which requires 96 discrete ordinates. This scheme is rarely used up to date and deserves more attention for high accuracy predictions.     

第二类变型Bessel函数的Chebyshev逼近

第二类变型Bessel函数Kn(z)在自变量趋于无穷时就是指数变小的，使用多项式逼近的方法求解往往误差很大．采用指数变换和J．P．Boyd的有理Chebyshev多项式计算第二类变型Bessel函数，得到了令人满意的在较大范围内有效的解．     

Absorption measurement of strained SiGe nanostructures deposited by UHV-CVD

In order to obtain a low band gap photocell based on the widely spread silicon technology, e.g. for thermophotovoltaics, SiGe nanostructures can be introduced into a monocrystalline silicon photocell. Beforehand, it is necessary to know the absorption coefficient of the SiGe quantum wells. On a silicon (1 0 0) substrate multiple Si/SiGe quantum well structures were grown by UHV-CVD. The Ge concentration and the well width were used as growth parameters. To obtain significant absorption, the experiment was set up to allow for 200 internal reflections.The total reflection of the light results in a standing electromagnetic wave. The absorption coefficient was obtained from the experimental data taking the geometry and the electric field distribution in the absorbing layer into account. The influence of well width and germanium content on the absorption was investigated with the goal of maximizing the absorption for photons with energies below the band gap energy of silicon. The measurement results are compared with a theoretical model, which takes the band structure of strained SiGe including confinement effects into account.     

On the number of curves of genus 2 over a finite field

In this paper we compute the number of curves of genus 2 defined over a finite field k of odd characteristic up to isomorphisms defined over k; the even characteristic case is treated in an ongoing work (G. Cardona, E. Nart, J. Pujolàs, Curves of genus 2 over field of even characteristic, 2003, submitted for publication). To this end, we first give a parametrization of all points in , the moduli variety that classifies genus 2 curves up to isomorphism, defined over an arbitrary perfect field (of zero or odd characteristic) and corresponding to curves with non-trivial reduced group of automorphisms; we also give an explicit representative defined over that field for each of these points. Then, we use cohomological methods to compute the number of k-isomorphism classes for each point in .