切向气流对激光加热材料的影响

 在重复频率YAG激光加载下，研究了30CrMnSiA钢片分别处于空气自然对流和切向强迫气流环境中不同的温度响应。实验用红外热像仪对靶前表面的温度进行了实时诊断，结果表明，在激光作用下，靶材的温升与靶前表面的对流换热状况有较大的关系，当靶面存在马赫数为0.1左右的切向气流时，材料的温升曲线明显低于靶处于空气自然对流环境下的温升曲线，气流与靶面的对流换热使得材料的激光加工所需能量或功率增加。这与应用热边界层换热动力学理论得到的结论一致。     

Characterizing domain mixing effects in hydrogen bond-compatibilized polymer blends

The nature and extent of phase mixing in blends of hydroxyl-functionalized polystyrene and poly(ethyl acrylate) (PS/PEA), where the driving force for mixing is hydrogen bonding, are characterized by several techniques. Small-angle x-ray scattering (SAXS) shows a reduction in average domain size with increasing functionalization level, a result also evident from scanning electron microscopy (SEM). Together, the two techniques reveal a very broad distribution of domain sizes. At high functionalization levels, both SAXS and SEM indicate a high degree of “in-domain” mixing, with little or no pure PS or PEA remaining in the blends. Mathematical modeling of dynamic mechanical thermal analysis (DMTA) data is employed to quantify this progression. Initially, mixing is primarily interfacial, but as the functionalization level increases, the mixed interphase rapidly grows to occupy the entire material. In agreement with the SAXS and SEM results, DMTA modeling shows that further increases in the functionalization level suppress the amplitude of composition variations in the sample. The onset of extensive in-domain mixing coincides with the marked changes in stress-strain behavior observed previously in these materials. © 1994 John Wiley & Sons, Inc.     

Sensitivity analysis of ion implanted silicon wafers after rapid thermal annealing

In this study, we have investigated sensitivities of the ion implanted silicon wafers processed by rapid thermal annealing (RTA), which can reveal the variation of sheet resistance as a function of annealing temperature as well as implantation parameters. All the wafers were sequentially implanted by the arsenic or phosphorous implantations at 40, 80, and 100 keV with the dose level of 10¹⁴ to 2 × 10¹⁶ ions/cm². Rapid thermal annealing was carried out for 10 s by the infrared irradiation at a temperature between 850 and 1150°C in the nitrogen ambient. The activated wafer was characterized by the measurements of the sheet resistance and its uniformity mapping. The values of sensitivities are determined from the curve fitting of the experimental data to the fitting equation of correlation between the sheet resistance and process variables. From the sensitivity values and the deviation of sheet resistance, the optimum process conditions minimizing the effects of straggle in process parameters are obtained. As a result, a strong dependence of the sensitivity on the process variables, especially annealing temperatures and dose levels is also found. From the sensitivity analysis of the 10 s RTA process, the optimum values for the implant dose and annealing temperature are found to be in the range of 10¹⁶ ions/cm² and 1050-1100°C, respectively. The sensitivity analysis of sheet resistance will provide valuable data for accurate activation process, offering a guideline for dose monitoring and calibration of ion implantation process.     

Ti扩散铌酸锂光波导特性的热固定技术

在Ti扩散铌酸锂光波导中,因光致折变效应而导致光波导特性漂移.在光波相干性的导波光学器件中,光致折变效应的影响尤为严重.本文报道了稳定光致折变效应的热固定技术实验结果;并提出在光波导特性的热固定过程中,不是H~+离子起主导作用这一看法.     

Light emission from Si nanocrystals embedded in CaF2 epilayers on Si(1 1 1): Effect of rapid thermal annealing

Visible photoluminescence (PL) of nanocrystalline silicon (nc-Si) embedded in single crystal CaF₂ formed on Si(1 1 1) has been studied and the influence of ex situ rapid thermal annealing (RTA) on the surface morphology and PL spectra has been studied. It has been found that the PL intensity and uniformity was improved by RTA with appropriate temperature and short annealing time.     

Finite element formulation of thermal boundary layers

In this article we discuss the finite element discretization of the two-dimensional, incompressible, and turbulent boundary layers. The formulation of the momentum equation is essentially due to Baker and Soliman [1] with some modifications.The versatility and the accuracy of the method is established by considering several test cases. The predictions are satisfactory and compare favorably with alternative numerical techniques.     

高功率激光反射镜的几个关键技术

 分析了制作高功率连续激光反射镜材料的热性能、缺陷及其加工工艺, 提出了制作高功率激光反射镜应考虑的几个关键问题: 反射镜材料的综合热性能比值S, 材料的微观结构、缺陷的大小和晶向的选择, 以及加工工艺的设计。并介绍了实验结果。     

Phase transformations in thermally exposed Au-Al ball bonds

Gold-aluminum ball bonds were thermally exposed at constant elevated temperatures, and the resultant phase transformations studied in detail. The as-bonded microstructure of a Au-Al ball bond essentially consisted of a reaction zone (termed “alloyed zone” (AZ) in the as-bonded condition) between the Au bump and the bonded Al metallization. It is the growth of the reaction zone between the Au bump and the bonded Al metallization and also the nonbonded Al metallization during thermal exposure that gave rise to the various phase transformations. Au₄Al, Au₈Al₃, and Au₂Al are the predominant phases that grew across the ball bond until the bonded Al metallization is available to take part in the interdiffusion reactions. After the complete consumption of the bonded Al metallization, the Au-Al phases reverse transformed resulting in the formation of the Au₄Al phase in the entire reaction zone across the ball bond (RZ-A). The lateral interdiffusion reactions resulted in the nucleation and the growth of all of the Au-Al phases given by the phase diagram. Kidson’s analysis and Tu et al.’s treatment were extended to a five-phase binary system to explain the phase transformations in thermally exposed Au-Al ball bonds. It is possible for all of the Au-Al phases to grow across a ball bond uninhibited as long as the bonded metallization is available. However, the supply limitation of the bonded metallization gives rise to reverse transformations where Al-rich phases transform to Au-rich phases and eventually result in the formation of the Au₄Al phase in the entire RZ-A. If infinite time is allowed, Au₄Al would dissolve; the extent of which is dependent on the solubility of Al in Au. No supply of Au lateral to the bond causes the reverse transformation of the Au₄Al phase, giving rise to the lateral growth of the remaining Au-Al phases. If infinite time is allowed, the lateral phase transformations would result in the formation of a phase that is dependant on the relative proportion of Au and Al present in the nonbonded metallization (NBM) and Au₄Al below the void line. Hence, the presence of a phase in a particular location of a ball bond is dependent on the time and temperature of thermal exposure.     

单层结构白色聚合物电致发光器件制备及其性能

选择梯形对次苯基聚合物(I．PPP)为母体和蓝色发光材料,掺杂MEH-PPV、OXD-7、PMMA分别作为橙红色发光材料、电子传输材料和绝缘介质材料,用旋涂法制成结构为ITO／白色发光层／A1的单层白色有机发光器件。对器件进行热处理(最佳热处理条件为180℃,1h)后,发现器件的发光性能得到明显改善。驱动电压25V时器件的发光亮度由42cd／m^2提高到355cd／m^2,色坐标为(x=0．332,y=0．347),非常接近于白色等能点。