Character of the thermal motion of water molecules according to the data on quasielastic incoherent scattering of slow neutrons

The paper discusses the applicability of quasi-crystalline approximation to describing the thermal motion of water molecules in their normal and supercooled states. The problem is subjected to the critical analysis of experimental data on incoherent scattering of slow neutrons based on theories developed by Singwi-Sjolander [1] and Oskotsky [2] modified to duly take into account the limited applicability range of diffusion approximation. The applicability conditions of quasi-crystalline approximation are shown to be consistently satisfied only when water is in supercooled state and within a narrow temperature range above the melting temperature.     

激光抛光技术的发展与展望

介绍激光抛光技术的发展历史,阐明激光抛光的应用现状及未来的发展前景,论述了激光抛光的工艺特点和作用机理,将激光抛光技术与其它抛光技术进行了全面的对比,指出激光抛光的优势及其存在的问题。     

Influence of the sulfonate countercation on the thermal stability of nafion perfluorosulfonate membranes

We report a strong dependence of the thermal stability of Nafion® perfluorosulfonate ionomer on the nature of the counterion associated with the fixed sulfonate site. These results were obtained using thermal gravimetric analysis on a series of alkali metal and alkyl ammonium cation-exchanged Nafion films. We have found that the temperature of decomposition of Nafion is inversely dependent on the size of the exchanged cation; i.e., Nafion films show improved thermal stability as the size of the counter cation decreases. We attribute this inverse relationship of thermal stability with counterion size to an initial decomposition reaction which is strongly influenced by the strength of the sulfonate-coun-terion interaction. © 1993 John Wiley & Sons, Inc.     

环状连续强激光下光学薄膜的瞬温和热畸变

详细研究了非冷却光学薄膜元件在环形激光光束辐照下的瞬态温度分布和随后的热畸变，并且用泰曼干涉仪实际测量了连续波氧碘激光辐照各种非冷却光学元件的热畸变量并与理论计算相比较，分析结果表明理论和实验相一致。     

压力淬火过程中锗的相结构研究

 应用高压原位差热方法，直接测量了压力下锗的固化参数─—固化温度与过冷度。高压差热信号表明，当压力大于3 GPa时，锗在凝固过程中可能发生结构相变。X射线结构分析表明，在最终的样品中除GeⅠ相外，还形成GeⅢ相和GeⅣ相。     

Effect of absorbed pump power on the quality of output beam from monolithic microchip lasers

The dependence of the beam propagation factor (M ² parameter) with the absorbed pump power in the case of monolithic microchip laser under face-cooled configuration is extensively studied. Our investigations show that the M ₂ parameter is related to the absorbed pump power through two parameters (α and β) whose values depend on the laser material properties and laser configuration. We have shown that one parameter arises due to the oscillation of higher order modes in the microchip cavity and the other parameter accounts for the spherical aberration associated with the thermal lens induced by the pump beam. Such dependency of M ² parameter with the absorbed pump power is experimentally verified for a face-cooled monolithic microchip laser based on Nd³⁺ -doped GdVO₄ crystal and the values of α and β parameters were estimated from the experimentally measured data points.     

Quantum states in fabricating poly-Si films

The quantum states are presented in these processions of fabricating poly-Si films. Amorphous silicon films prepared by PECVD has been crystallized by conventional furnace annealing (FA) and rapid thermal annealing (RTA), respectively. It is found that the thin films grain size present quantum states with the increasing of the gas flow ratios of SiH₄, H₂ mixture, substrate temperatures, frequency power, annealing temperature and time.     

烟气中Hg的氧化机理的研究

本文对Ｈｇ与Ｃｌ２在烟气中的氧化反应进行了热力平衡计算和动力学计算。平衡计算的结果表明有ＣＩ元索存在时Ｈｇ的氧化率为１００％，而在相同的条件下动力学计算纺果为Ｈｇ的氧化率在２０％～８０％之间变化，与实验结果吻合。实际的氧化反应是一种超平衡状态，不能达到理想的平衡状态。因此应采用动力学与热力平衡分析相结合的方法研究Ｈｇ在烟气中的反应机理。同时，计算结果显示Ｃｌ含量对Ｈｇ的氧化率的影响很大．     

Si基膜片型气敏传感器微结构单元的热学性能

微结构气敏传感器由于其微型化、低功耗、易阵列化和易批量生产等优点而受到国内外研究者的广泛关注。利用微机电系统（MEMS）加工技术，制备Si基膜片型微结构单元，并分析其热学性能。这种单元工作区温度为-300℃时，加热功率约75mW；并且膜片工作区的热质量很小，温度可以于毫秒量级的时间内，在室温和450℃之间调制。利用这种微结构单元，可以在温度调制方式下，研究气敏薄膜的电学特性和敏感机理。     

不同重力环境下辐射加热材料表面着火特性分析

研究外界辐射加热下，不同重力环境中热薄燃料的着火特性．探讨了重力、环境氧浓度、环境压力及外界辐射强度对着火的影响．结果表明，随着重力的变化，存在不同的着火机制．在微重力和在高的环境氧浓度中，材料的着火延迟时间变短．压力减小，着火延迟时间增大．随着辐射强度的增大，着火延迟时间变小．