Towards implementation of a nickel silicide process for CMOS technologies

In this paper, we review some of the advantages and disadvantages of nickel silicide as a material for the electrical contacts to the source, drain and gate of current and future CMOS devices. We first present some of the limitations imposed on the current cobalt silicide process because of the constant scaling, of the introduction of new substrate geometries (i.e. thin silicon on insulator) and of the modifications to the substrate material (i.e. SiGe). We then discuss the advantages of NiSi and for each of the CoSi₂ limitations, we point out why Ni is believed to be superior from the point of view of material properties, miscibility of phases and formation mechanisms. Discussion follows on the expected limitations of NiSi and some of the possible solutions to palliate these limitations.     

从图像的二维谱分析现行电视的缺陷

从图像的二维谱可以得出现行广播电视图像为什么不能满足人眼的视觉匹配以及现行电视制度的不足 ,从而对未来的高清晰度电视发展提出要求。     

基于VXI总线的超宽带线性调频信号源的设计

主要介绍了VXI总线C尺寸超宽带线性调频信号源的设计方法，重点描述了利用现场可编程逻辑器件FPAG和DSP设计VXI总线接口电路，以及数字波形存储直读技术在线性调频信号源中的应用。     

理想九点五态控制器原理的叙述

用计算的方式叙述理想九点五态控制器的控制原理。为便于人们理解二阶对象的运动中控制的变化过程,将抽象的对象转换为人们熟知的L-R-C电路,通过调节输入电压(即控制作用)的大小和方向来实现对对象性能的调节,并使系统达到理想的性能指标。最后用仿真来验证计算结果的正确性。     

高温氨化合成GaN微晶

分别利用Ga2O3粉末和Ga2O3凝胶作为Ga源,采用NH3为N源,在950℃下,分别将两种反应物与流动的NH3反应20 min合成了GaN微晶。用X射线衍射(XRD)、扫描电子显微镜(SEM)、选择区电子衍射(SAED)对微晶进行结构、形貌的分析,特别是对两种不同途径合成GaN微晶的XRD进行了分析比较。结果表明,当Ga源温度为950℃时两种不同的合成途径均可得到六方纤锌矿结构的GaN单晶颗粒,在氮化温度为850℃和900℃时,利用Ga2O3粉末作为Ga源,仅有少量的Ga2O3转变为GaN;而采用Ga2O3凝胶作为Ga源,在相同的温度下,大部分凝胶经过高温氨化反应均可转化为GaN。     

The Application of the Theory of the Price Elasticity of Demand to the EMS Management

1　Introduction　ExpressMailService (EMS )wasopenedupbyChinaPostintheearly 80stomeettheneedsofeco nomicdevelopment.It sthemostcompetitiveoneofthepostservices.There recivilaviation ,Chinarail wayandotherprivateexpressdeliverycompaniesdomesticallyandUPS ,TNT ,DHLandTEDEXcompetingwithEMSintheinternationalmarket.OneofthemostpowerfulcompeteweaponofthesecompaniesisthelowerpricethanEMS[1 ] .BecauseofthefiercecompetitionEMSdeclinedfromthemo nopolistindomesticandinternationalmarketoftheear…     

Study on the Complexity of the Bullwhip Effect

Recent years have witnessed a rapid growth of interest in the study of the dynamic behavior of replenishment rules of bullwhip effect. We prove that bullwhip effect and butterfly effect share a same the self-oscillation amplifying mechanism that is the ordering decisions the supplier self-oscillation amplify the perturbations brought by the errors in the processing of retailers' demand information. This results as an explicit self-similar structure of the sensitivity of the system to the initial values duty to the nonlinear mechanism. In this paper, the causes process of the bullwhip effect is described as the internal nonlinear mechanism and study on the complexity of bullwhip effect for order-up-to policy under demand signal processing. The methodology is based on fractal and chaotic theory and allows important insights to be gained about the complexity behavior of bullwhip effect.     

多传感器目标的模糊识别

根据模糊理论，采用信息融合技术和模糊识别技术，讨论了在多类传感器网内进行多目标模糊识别的一般原理和方法。     

二氧化锡溅射工艺研究

SnO2 是最早使用也是目前使用最广泛的一种气敏材料 ,使用该材料设计制作的气敏传感器具有许多优点。在简要介绍溅射镀膜的成膜过程和特点的基础上 ,着重介绍了SnO2 膜的制备流程 ,分析了功率和温度变化对成膜质量的影响     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.