完全可分的三元系TS(v,4)的支撑集

§ 1　 IntroductionA triple system of order v and indexλ,denoted by TS(v,λ) ,is a collection of3- ele-mentsubsets Aof a v- set X,so thatevery 2 - subsetof X appears in preciselyλ subsets of A.L etλ≥ 2 and (X,A) be a TS(v,λ) .If Acan be partitioned into t(≥ 2 ) parts A1,A2 ,...,Atsuch that each (X,Ai) is a TS(v,λi) for 1≤ i≤ t,then (X,A) is called de-composable.Otherwise it is indecomposable.If t=λ,λi=1for 1≤ i≤ t,the TS(v,λ) (X,A) is called completely decomposable.It …     

线性联合检测算法在TD-SCDMA系统中的性能分析与比较

时分、同步码分多址（TD－SCDMA）系统是基于时分双工（TDD）的块传输系统，它使用了联合检测这项关键技术来抵抗符号间干扰（ISI）和多址干扰（MAI）。以上行链路为例，本文分析了三种线性联合检测算法－－匹配滤波块均衡器（MF－BLE）、迫零块均衡器（ZF－BLE）和最小均方误差块均衡器（MMSE－BLE）。从理论上，我们描述了这三种线性联合检测算法的基本原理，并对它们进行了比较（包括抗干扰性能和计算量）。随后，我们模拟了不同参数条件下（信道模型、码道数目、天线数目）这几种算法的性能，并与理论分析进行对照，得出一定结论。     

c轴定向氮化铝薄膜的制备

利用电子回旋共振 (ECR)微波增强化学气相沉积法 (PECVD)并使用氮气 (N2 ) ,氩气 (Ar)和AlCl3蒸气作为气源在直径为 6 .35cm的 (10 0 )单晶硅片表面制备了c轴定向氮化铝 (AlN)薄膜 ,并使用X射线衍射仪及其X射线特征能谱和扫描电镜 (SEM)分析了薄膜特征 ,研究了微波功率、基板温度和N2 流量对薄膜c轴定向的影响 ,得到了c轴偏差角小于 5°的高质量大面积AlN薄膜。     

Growth condition of iodine-doped n+-CdTe layers in metal-organic vapor phase epitaxy

Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride (DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×10¹⁶ cm⁻³ to 2.6×10¹⁸ cm⁻³. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors. Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth temperature.     

分散图象压缩的遗传算法

基于分形和PIFS函数的特点，提出一种改进的遗传算法用于分形压缩分块的定义域匹配搜索算法。该方法克服了原来分形图象压缩中分类匹配算法固有的局部最优性和随机搜索的缺点，是一种具导引的全局优化的搜索算法。分析和实验表明，该方法的图象压缩比高，解码质量好，若应用遗传算法的并行性，其编码速度也得到提高。     

基于TMS320C5410EVM板的IIR数字滤波器的设计

本文研究DSP中的IIR数字滤波器的原理和用MATLAB在TMS320C5410EVM中设计IIR数字滤波器的过程和设计方法以及程序的调试方法。     

NGN问题及其发展策略考虑

本文在分析讨论NGN的背景，目前存在的争议基础上，结合中国国情，重点对NGN框架目标进行了展望并提出了发展策略考虑。     

数字视频混合系统的设计

介绍了利用Philips的一款视频芯片SAA71 99B实现的数字视频混合系统.该系统可以将一路PAL制彩色复合视频信号编码进入另一路PAL制彩色复合视频信号中,以取代第二路视频中用户指定的颜色,从而实现了两路视频的混合.另外还介绍了如何利用单片机的I/O口模拟I 2C总线以及如何利用单片机进行彩色空间变换的算法.     

教学研究:介绍量子力学几个基本概念——兼答《关于量子几何相位的评注》中的几个主要问题

介绍了量子绝热定理的物理含义及成立的条件，认为有关主要献（Aharonov-Anandan,Bohm，孙昌璞等）的表述是正确的，而《关于量子几何相位的评注》^[1]（以下简称《评注》）相应的表述不完全正确。在此基础上，认为这些献和教材（R.Shankar)得出的涉及Berry绝热相位的一些论述（不含Berry绝热相因子的瞬时能量本征态不满足含时Schroedinger方程等）也是正确的，而《评注》的论述与此相反。《评注》认为只有γn(C)才是Berry相位。本作则倾向于把γn（t）叫做Berry绝热相位，而把γn（C）=γn（T）-γn（0）叫做几何相位（geometric phase)^[2]。     

A topological aspect of Sobolev mappings

Let be a connected open set, . We give a sufficient condition for a mapping , , to have the property that sgn is almost everywhere of one sign. Following the work of Müller, Spector, and Tang [MST], we give an application of our results to the theory of non-linear elasticity. Received: 13 October 2000 / Accepted: 23 January 2001 / Published online: 4 May 2001