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81.
实践教学是理论教学的有效补充,是专业技能的具体表现。在理论教学的基础上,结合现场工作的实际步骤,分析了程控交换设备的安装、业务开通及程控交换设备的维护三个业务情景的具体内容,最终使学习者掌握专业技能的具体流程和工作要点。  相似文献   
82.
The current-induced magnetic switching is studied in Co/Cu/Co nanopillar with an in-plane magnetization traversed under the perpendicular-to-plane external field.Magnetization switching is found to take place when the current density exceeds a threshold.By analyzing precessional trajectories,evolutions of domain walls and magnetization switching times under the perpendicular magnetic field,there are two different magnetization switching modes:nucleation and domain wall motion reversal;uniform magnetization ...  相似文献   
83.
Abstract

Our objective in using column switching is primarily to achieve the desired separation in the minimum analysis time. Complimentary to this aim is the need for sample and column cleanup followed by column re-equilibration. Finally, all operations should be capable of automation. Fundamental to column switching methodology is the concept of Zone cutting, where part of the chromatogram is transferred to another column. This forms the basis of sample cleanup and is a very versatile and powerful method. Multiple zone cutting is also possible to further increase the scope of cleanup or to minimise analysis time. Zone cutting is also complimentary to the techniques of trace enrichment and recycling. Examples will be given involving the use of these techniques in the analysis of complex matrices such as urine, plant extracts, wine and serum. The latter will be used to propose a novel approach to the quantitative analysis of anti-convulsants in serum using hexobarbital as internal standard.  相似文献   
84.
With more than 40 years Moore scaling, the speed of CMOS transistors is around 100 GHz. Such fact makes it possible to realize mm-wave circuits in CMOS. However, with the target of achieving broadband and power-efficient operation, 60 GHz CMOS RF transceiver faces severe challenges. After reviewing the technology issues, regarding the 60 GHz applications, this paper discusses design challenges both from the system and the building block levels, and also presents some simulated or measured circuits results.  相似文献   
85.
Theoretical analysis of the radiation effect on transient behavior of an optoelectronic integrated device composed of a heterojunction phototransistor and a light emitting diode is studied theoretically. First, the transient behavior and the rise time of this device before radiation are investigated based on the frequency response of the constituent devices and the optical feedback inside the device. Second, the effect of neutron irradiation flux on the transient behavior of this device is theoretically studied. The results show that, by increasing the optical feedback inside the device, the rise time in the amplification mode is increased along with an increasing output, while that in the switching mode can be reduced effectively, and the neutron irradiation reduces the transient response and the rise time in both the amplification and switching modes. This type of model can be exploited as optical amplifier, optical switching device, and other applications.  相似文献   
86.
In this paper, the impact of a path selection on other existing paths in optical burst switching (OBS) networks is studied by analyzing the contention among different traffic streams and the interaction between the route selection and traffic load balance. The results show that there exists a mutual reinforcement interaction among the traffic load of a path, the path burst loss ratio and the contention ability of the path when burst loss ratio based multi-path selection strategies are adopted, which may increase the unbalance of traffic and lead to severe congestion further. A maximum-efficiency-first multi-path selection strategy, which considers the performance of the burst flows and the impact of a path selection on existing OBS paths at the same time by a combined metric of route efficiency, is proposed to maximize the utility of the burst flows and minimize the increment of lost throughput on the path. The performance of the proposed multi-path selection strategy is evaluated through simulation. The results show that the presented strategy obviously outperforms the least burst loss ratio strategy and shortest path first strategy in terms of the burst loss ratio in the practical unbalanced background traffic, especially when the network is heavily loaded.  相似文献   
87.
Poly(N-isopropylacrylamide)-modified graphene oxide (PNIPAm-GO), which is a type of thermally responsive GO, was designed and synthesized through a covalent “grafting-from” strategy. The as-prepared modified nanosheets integrated the individual advantages of two components, such as the thermal sensitivity of the PNIPAm terminal as well as the conductivity and the open 2D structure of the GO substrate. PNIPAm-GO was able to perform the reversible regulation of hydrophilicity/hydrophobicity in aqueous solution upon variations in the temperature. Such a unique property might also lead to the utilization of PNIPAm-GO as an intelligent electrode material to achieve a switchable electrochemical response toward a [Fe(CN)6]3−/4− probe. The PNIPAm-GO modified glassy carbon electrode (PNIPAm-GO/GC electrode) was able to exhibit better electrochemical performance in an ON/OFF switching effect than the PNIPAm-modified glassy carbon electrode (PNIPAm/GC electrode) without GO owing to the intrinsic properties and large surface area of the introduced GO. Moreover, it was found that the PNIPAm-GO/GC electrode also displayed excellent thermally responsive electrocatalysis toward the detection of 1,4-dihydro-β-nicotinamide adenine dinucleotide (NADH) and dopamine (DA), which resulted in two different catalytic statuses on the same electrode. This kind of switchable catalytic performance of the PNIPAm-GO/GC electrode might greatly enhance the flexibility of its application, and thus it is expected to have wide potential for applications in the fields of biosensors and biocatalysis.  相似文献   
88.
Bipolar resistive switching (RS) phenomenon without required electroforming has been observed in epitaxial (111)-oriented BaTiO3 (BTO) thin films deposited by PLD technique on conducting Nb-doped substrate of SrTiO3 (NSTO). Negative differential resistance (NDR) is observed at about −5 V when the maximum of positive voltage exceeds 7 V and the compliance current is more than 1.5 mA. And bipolar resistive switching has also been observed. In addition, the resistance of LRS decreases with increasing compliance current or the maximum of positive voltage while that of HRS barely changes, and the resistance of HRS increases with increasing the absolute of maximum of negative voltage while that of LRS scarcely changes. A typical rectifying behavior is observed when the maximum of positive voltage is less than 4 V (such as 2 V). In this case, the reverse biased current is strongly enhanced under illumination of white-light, and vice versa. The resistance of LRS and HRS can be controlled by the applied voltage or the compliance current. The rectifying behavior can be controlled by the white-light. The transition from rectifying behavior to bipolar resistive switching can be controlled by the applied voltage. The above results were discussed by considering the oxygen vacancies that can trap or release electrons as a trapping layer at the Pt/BTO interface.  相似文献   
89.
Les différences observées dans la mesure des indices et des biréfrignences dans les cristaux liquides, lors de l'utilisation de deux séries de méthodes: utilisation de cuve prismatique à longueur d'onde fixe ou de cuves à faces parallèles à longueur d'onde variable sont relevées et confirmées.  相似文献   
90.
Tristable switching nonvolatile memory (NVM) devices based on graphene quantum dots (GQDs) sandwiched between multi-stacked poly (methyl methacrylate) (PMMA) layers were fabricated on indium-tin-oxide (ITO)-coated glass substrates by using a solution-processed method. Current-voltage (I-V) curves at 300 K for the silver nanowire/PMMA/GQD/PMMA/GQD/PMMA/ITO/glass devices showed tristable switching currents with high-resistance, intermediate-resistance, and low-resistance states. The device's cycling endurance of the three resistance states remained stable with a distinguishable value for each resistance state over 1000 cycles, and the obtained retention results showed well-distinguished resistance states without degradation for up to 1 × 104 s. Schottky emission, Poole-Frenkel emission, trapped-charge limited-current, and ohmic conduction were proposed as the dominant conduction mechanisms for the fabricated NVM devices based on the obtained I-V characteristics. The described energy-band diagrams confirm the proposed conduction band mechanisms.  相似文献   
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