Computer-aided selection and optimization of chromatographic columns and conditions for multicolumn analysis procedures

Clearly, the usefulness of a computer-aided column design program will depend on its ability to predict quickly and accurately, a design which will yield chromatograms closely approximating those obtained experimentally. Such a computer model for designing and specifying operating conditions for optimum performance of either single or serially coupled columns with different stationary phases is described herein. Tests have been performed in order to verify the accuracy of the model. In addition to single column optimization and the design of column combinations which can be used to achieve separations difficult or impossible on a single phase alone, the model has proven quite useful as an aid to the design and development of multicolumn analysis procedures that involve critical timing of valve-switching sequences.     

一种基于门限的光突发交换受限偏射路由算法

提出了一种基于突发丢失门限的条件偏射路由算法（LDFD），该算法采用丢弃少量偏射的高优先级突发来保证偏射路由上较低优先级非偏射突发的服务质量（QoS）。当偏射的高优先级突发到达核心节点而该节点没有空闲数据信道时，就启用定义的偏射条件检测函数来判断是丢弃该突发还是允许其抢占非偏射的低优先级突发的资源，从而减少偏射突发与偏射路由上原有突发的竞争。仿真表明，该算法可以很好地控制偏射突发对偏射路由上正常流量的影响，并有效地提高整个网络的突发丢失性能。     

一种相位开关型分频器电路的噪声分析

介绍了一种相位开关型分频器电路的噪声分析方法。这种方法基于频率综合器的频域模型,能比较准确地预测分频器的相位噪声和它对整个频率综合器相位噪声的影响。分频器电路采用0.18μm CM O S工艺设计,用于W CDM A通讯系统中。在分析过程中,针对此电路的相位开关结构,提出了一些改进其噪声性能的方法。最后用仿真结果进行分析验证,仿真结果和理论相符合。     

光分组交换中的波长变换器配置研究

首先对波长变换器的功能及分类进行详细的论述,然后,对波长变换器的配置进行分析,总结出两种波长变换器配置方法,即独占式配置方法和共享式配置方法.针对独占式配置方法,本文使用仿真实验的方法研究了在不同类型的波长变换器下交换节点丢包性能的差异.本文还对独占式配置方法和共享式配置方法进行对比研究.     

三值双传输管电路的通用综合方法

提出采用双传管逻辑设计三值电路的方法,对每个MOS管的逻辑功能均采用传输运算予以表示以实现有效综合.建立了三值双传输管电路的反演法则和对偶法则.新提出的三值双传输管逻辑电路具有完全基于标准CMOS工艺,无需对MOS管作任何阈值调整,结构简单、规则,输入信号负载对称性好,逻辑摆幅完整以及无直流功耗等特点.采用TSMC 0.25μm工艺参数和最高电压为3V的HSPICE模拟结果验证了所提出综合方法的正确性.     

载波快速捕获与跟踪的双数字锁频环路无缝切换

锁频环广泛应用于载波频率快速同步的场合,为解决大捕获范围和跟踪精度之间的矛盾,通常捕获和跟踪状态时采用带宽不同的频率锁定环路,并根据载波同步情况进行切换.对这种硬切换所导致的跟踪环路的收敛过程、瞬态时间进行分析,并基于二阶锁频环与卡尔曼滤波等效结构,应用卡尔曼滤波算法进行两种状态之间环路增益时变的无缝切换.推导出高动态数字直扩接收机差积鉴频二阶锁频环路无缝切换控制增益,两种切换方式的仿真结果表明无缝切换的效果优于传统的硬切换方式.     

SG32525芯片在开关(逆变)电源中的应用

在研制开关电源和后备式UPS(不间断电源)的工程实践中,为提高其转换效率,减少外围元器件,减小体积,并提高长时间工作的可靠性与PWM(脉宽调制)的控制精度,对新型PWM集成芯片SG3525的功能特点、控制特性及外围电路进行了研究。讨论了该芯片在UPS逆变电源和开关稳压电源中的应用,利用该芯片设计并制作了高效率的开关电源与UPS逆变电源。     

Low voltage bipolar resistive switching in self-assembled PVDF nanodot network in capacitor like structures on Au/Cr/Si with Hg as a top electrode

In this letter, resistive switching phenomena in self-assembled nanodot network of Polyvinylidene fluoride (PVDF) polymer in a capacitor geometry of Hg/PVDF/Au/Cr/Si is investigated. A stable & bipolar resistive switching with a set voltage ranging from 0.35 V to 0.9 V & reset voltage with a range of −0.08 V to −0.25 V is detected. A practical resistance ratio between HRS and LRS of 10–25 may have great potential in organic memories. Possible mechanism for the bipolar switching is discussed with the filament type conduction mechanism. Furthermore, the low voltage switching is elucidated with the high current density associated filament formation and it is explicated using the parallel resistor model.     

Fast switching of vertically aligned negative liquid crystals by optically hidden relaxation

We propose a method for fast switching of vertically aligned (VA) negative liquid crystals (LCs) by hiding the relaxation process of LCs. During the turn-off process, a strong in-plane electric field is applied for a short duration of time instead of relying solely on the slow relaxation of LCs. The LC molecules are rotated to the transmission axis of one of the polarisers by the applied in-plane electric field, resulting in turn-off switching that is 5.8 times faster than that of a conventional VA cell. By applying an overdriving scheme, we experimentally obtained a total response time of 3.3 ms.     

Stable resistive switching characteristics of Ce:HfOx film induced by annealing process

In this work, Ce:HfO_x films were fabricated and the resistive switching characteristics were investigated. The chemical bonding states of the films were explored by X-ray photoelectron spectroscopy. The annealing process was carried out to modulate the concentration of oxygen vacancies in the film to confirm the dominant role of oxygen vacancies on resistive switching behaviors, which resulted in the elimination of unstable oxygen vacancies and the introduction of oxygen vacancy near Ce dopants due to the reduction of Ce⁴⁺. Benefiting from the oxygen vacancies near Ce dopants, stable resistive switching performance can be achieved for the annealed Ce:HfO_x sample. A schematic diagram based on the formation and rupture of oxygen vacancy filaments was proposed to illustrate the switching behaviors of annealed Ce:HfO_x sample.