拉曼放大器的交迭因子模型及其性能特性仿真

通过引人交迭因子的概念，提出了光纤拉曼放大器(FRA)仿真的改进模型。采用此模型进行仿真，可以在保证精度的基础上，显著缩短仿真时间。在此模型的基础上，仿真了色散和非线性效应对超高斯脉冲抽运拉曼放大器性能的影响。结果表明，色散对其影响较大，而非线性系数对其影响相对较小。     

Fluorosulfation of fluoroalkyl halides

The basic characteristics of fluorosulfation of fluoroalkylhalides (effect of the structure of the polyfluoroalkyl, nature of the halogen, acid catalysis, etc.) with halogen fluorosulfates and peroxydisulfuryl difluoride were investigated. A mechanism was proposed for formation of fluorosulfonic acid fluoroalkyl esters based on the experimental and quantum chemical data.A. N. Nesmeyanov Institute of Organoelemental Compounds, Russian Academy of Sciences, 117813 Moscow. Translated from Izvestiya Akademii Nauk, Seriya Khimicheskaya, No. 8, pp. 1718–1732, August, 1992.     

AgOx薄膜的光开关特性和机理研究

用磁控溅射法制备了具有超分辨近场结构的系列薄膜 ,测量了非线性层AgOx 的光开关特性及其结构随温度的变化 ,分析了AgOx 的光开关特性与微结构之间的内在联系     

含非局部源的反应扩散问题

本文对含非局部源反应扩散方程的定常问题讨论了正解的存在性，对依赖时间的解，给出了整体存在条件和有限时间爆破条件。     

From Lie algebra crossed modules to tensor hierarchies

The present paper, though inspired by the use of tensor hierarchies in theoretical physics, establishes their mathematical credentials, especially as genetically related to Lie algebra crossed modules. Gauging procedures in supergravity rely on a pairing – the embedding tensor – between a Leibniz algebra and a Lie algebra. Two such algebras, together with their embedding tensor, form a triple called a Lie-Leibniz triple, of which Lie algebra crossed modules are particular cases. This paper is devoted to showing that any Lie-Leibniz triple induces a differential graded Lie algebra – its associated tensor hierarchy – whose restriction to the category of Lie algebra crossed modules is the canonical assignment associating to any Lie algebra crossed module its corresponding unique 2-term differential graded Lie algebra. This shows that Lie-Leibniz triples form natural generalizations of Lie algebra crossed modules and that their associated tensor hierarchies can be considered as some kind of ‘lie-ization’ of the former. We deem the present construction of such tensor hierarchies clearer and more straightforward than previous derivations. We stress that such a construction suggests the existence of further well-defined Leibniz gauge theories.     

平板网架结构分析的超级有限元法

本文给出一种二维矩形超级单元，用以分析平板网架结构，其做法是将大型平板网架结构离散成一系列矩形超级单元，考虑弯曲、剪切、挤压、拉压、翘曲等多种非经典变形效应，采用构件自由度向超级元自由度的转换把大型多构件问题的求解变为二维问题的求解，可大大减少未知量，又能保证精度，并可方便地与一般有限元软件连接。     

平板网架结构分析的超级条元法

本文针对复杂杆系结构提出一种超级有限条的分析方法。这种方法基于半连续半离散思想将各杆件结点自由度归结为整体结构自由度；进一步又将整体自由度简化为少数结线自由度上机计算。这将为复杂结构体系开拓一条简便、实用的工程分析途径。     

Single‐Molecule Methods to Study Membrane Receptor Oligomerization

Membrane receptors control fundamental cellular processes. Binding of a specific ligand to a receptor initiates communication through the membrane and activation of signaling cascades. This activation process often leads to a spatial rearrangement of receptors in the membrane at the molecular level. Single‐molecule techniques contributed significantly to the understanding of receptor organization and rearrangement in membranes. Here, we review four prominent single‐molecule techniques that have been applied to membrane receptors, namely, stepwise photobleaching, Förster resonance energy transfer, sub‐diffraction localization microscopy and co‐tracking. We discuss the requirements, benefits and limitations of each technique, discuss target labeling, present a selection of applications and results and compare the different methodologies.     

超级有限元法及其在结构工程中的应用

本文探讨一种基于半连续半离散思想，适用于复杂结构（如高层框架、剪力墙、桁架、网架等结构系统）工程分析的超级有限元，其结构数值分析是按连续体进行，但又按单个构件进行有限元计算。这种按整体系统进行离散所获得的单元内部包含众多构件，有别于一般常见的实体有限元，称为“超级有限元”。这种方法自由度数比一般有限元法少很多，又与单元内部所含构件数多少无关，并可求取结构内每个构件的内力值。     

具有P型覆盖层新型超级结横向双扩散功率器件

为了设计功率集成电路所需要的低功耗横向双扩散金属氧化物半导体器件(lateral double-diffused MOSFET), 在已有的N型缓冲层超级结LDMOS(N-buffered-SJ-LDMOS)结构基础上, 提出了一种具有P型覆盖层新型超级结LDMOS结构(P-covered-SJ-LDMOS). 这种结构不但能够消除传统的N沟道SJ-LDMOS由于P型衬底产生的衬底辅助耗尽问题, 使得超级结层的N区和P区的电荷完全补偿, 而且还能利用覆盖层的电荷补偿作用, 提高N型缓冲层浓度, 从而降低了器件的比导通电阻. 利用三维仿真软件ISE分析表明, 在漂移区长度均为10 μm的情况下, P-covered-SJ-LDMOS的比导通电阻较一般SJ-LDMOS结构降低了59%左右, 较文献提出的N型缓冲层 SJ-LDMOS(N-buffered-SJ-LDMOS)结构降低了43%左右.