The CRT is the scaling limit of unordered binary trees

We prove that a uniform, rooted unordered binary tree (also known as rooted, binary Pólya tree) with n leaves has the Brownian continuum random tree as its scaling limit for the Gromov‐Hausdorff topology. The limit is thus, up to a constant factor, the same as that of uniform plane trees or labeled trees. Our analysis rests on a combinatorial and probabilistic study of appropriate trimming procedures of trees. © 2011 Wiley Periodicals, Inc. Random Struct. Alg., 38, 467–501, 2011     

Orthosymplectic Quantum Function Superalgebras OSPq（2l＋ 1｜2n）

By the R-matrix of orthosymplectic quantum superalgebra U _q (osp(2l+1|2n)) in the vector representation, we establish the corresponding quantum Hopf superalgebra OSP _q (2l + 1|2n). Furthermore, it is shown that OSP _q (2l + 1|2n) is coquasitriangular.     

Some existence results for an elliptic equation of Kirchhoff‐type with changing sign data and a logarithmic nonlinearity

The paper deals with some existence results for an elliptic equation of Kirchhoff‐type with changing sign data and a logarithmic nonlinearity by direct variational method, Galerkin approach, and sub‐super solutions method. Our results are natural extension of Boulaaras' work in (Math Methods Appl Sci; 41(13):5203‐5210).     

Improved Shamir's CRT‐RSA Algorithm: Revisit with the Modulus Chaining Method

RSA signature algorithms using the Chinese remainder theorem (CRT‐RSA) are approximately four‐times faster than straightforward implementations of an RSA cryptosystem. However, the CRT‐RSA is known to be vulnerable to fault attacks; even one execution of the algorithm is sufficient to reveal the secret keys. Over the past few years, several countermeasures against CRT‐RSA fault attacks have tended to involve additional exponentiations or inversions, and in most cases, they are also vulnerable to new variants of fault attacks. In this paper, we review how Shamir's countermeasure can be broken by fault attacks and improve the countermeasure to prevent future fault attacks, with the added benefit of low additional costs. In our experiment, we use the side‐channel analysis resistance framework system, a fault injection testing and verification system, which enables us to inject a fault into the right position, even to within 1 μs. We also explain how to find the exact timing of the target operation using an Atmega128 software board.     

太阳能电池续流储能间歇式供电系统实验研究

基于持续收集能量、间歇式供电的目的。本文介绍了超级电容特性参数,给出了超级电容、太阳能电池的选择方法,设计了太阳能电池续流储能间歇式供电系统,通过实验验证了续流储能的可行性。     

密度矩阵重正化群的异构并行优化

密度矩阵重正化群方法（DMRG）在求解一维强关联格点模型的基态时可以获得较高的精度,在应用于二维或准二维问题时,要达到类似的精度通常需要较大的计算量与存储空间.本文提出一种新的DMRG异构并行策略,可以同时发挥计算机中央处理器（CPU）和图形处理器（GPU）的计算性能.针对最耗时的哈密顿量对角化部分,实现了数据的分布式存储,并且给出了CPU和GPU之间的负载平衡策略.以费米Hubbard模型为例,测试了异构并行程序在不同DMRG保留状态数下的运行表现,并给出了相应的性能基准.应用于4腿梯子时,观测到了高温超导中常见的电荷密度条纹,此时保留状态数达到10⁴,使用的GPU显存小于12 GB.     

二代微光像增强器的发展与应用

微光像增强器在90年代中后期进入了新的发展和应用阶段,主要表现为二代像增强器在性能指标上有了质的提高,出现了性能能与三代微光像增强器相媲美的高性能超二代像增强器.本文着重对超二代像增强器在国内的应用前景进行分析和比较.     

具有部分超结的新型SiC SBD特性分析

提出了一种具有部分超结（super junction, SJ）结构的新型SiC肖特基二极管,命名为SiC Semi-SJ-SBD结构,通过将常规SBD耐压区分为常规耐压区和超结耐压区来减小导通电阻,改善正向特性.利用二维器件模拟软件MEDICI仿真分析,研究了不同超结深度和厚度时击穿电压(V_B)和比导通电阻(R_on-sp),与常规结构的SBD比较得出,半超结结构可以明显改善SiC肖特基二极管特性,并得到优化的设计方案,选择超结宽度2< 关键词： SiC肖特基二极管 super junction 导通电阻 击穿电压     

A novel TFS-IGBT with a super junction floating layer

A novel trench field stop (TFS) IGBT with a super junction (SJ) floating layer (SJ TFS-IGBT) is proposed.This IGBT presents a high blocking voltage (>1200 V), low on-state voltage drop and fast turn-off capability. A SJ floating layer with a high doping concentration introduces a new electric field peak at the anode side and optimizes carrier distribution, which will improve the breakdown voltage in the off-state and decrease the energy loss in the on-state/switching state for the SJ TFS-IGBT. A low on-state voltage (VF) and a high breakdown voltage (BV) can be achieved by increasing the thickness of the SJ floating layer under the condition of exact charge balance. A low turn-off loss can be achieved by decreasing the concentration of the P-anode. Simulation results show that the BV is enhanced by 100 V, VF is decreased by 0.33 V (at 100 A/cm2) and the turn-off time is shortened by 60%, compared with conventional TFS-IGBTs.     

氮掺杂碳气凝胶电极材料的制备及性能

以三聚氰胺（M）、间苯二酚（R）和甲醛（F）为原料,经溶胶-凝胶法、超临界干燥和高温碳化制备了系列的氮掺杂碳气凝胶（NCAs）。X射线光电子能谱(XPS)分析表明,氮元素成功地引入到碳气凝胶中,并且可以通过调节三聚氰胺掺杂量来控制氮掺杂量;扫描电子显微镜（SEM）和N2吸附测试显示出不同氮掺杂量的碳气凝胶的微观结构差异较大,随着氮含量的增加,比表面积有先减后增的趋势;在6 mol/L KOH溶液中进行的恒流充放电和循环伏安测试表明,引入氮元素能够极大地改善碳气凝胶的电化学性能,最高比电容量达176 Fg-1,并且凝胶具有良好的电容特性和可逆性。