On the interplay of cell thickness and optimum period of silicon thin‐film solar cells: light trapping and plasmonic losses

Light trapping and photon management in honeycomb‐textured microcrystalline silicon solar cells are investigated experimentally and by modeling of the manufacturing process and the optical wave propagation. The solar cells on honeycomb‐textured substrates exhibit short circuit current densities exceeding 30 mA/cm² and energy conversion efficiencies of up to 11.0%. By controlling the fabrication process, the period and height of the honeycomb‐textured substrates are varied. The influence of the honeycomb substrate morphology on the interfaces of the individual solar cell layers and the quantum efficiency is determined. The optical wave propagation is calculated using 3D finite difference time domain simulations. A very good agreement between the optical simulation and experimental results is obtained. Strategies are discussed on how to increase the short circuit current density beyond 30 mA/cm². In particular, the influence of plasmonic losses of the textured silver (Ag) reflector on the short circuit current and quantum efficiency of the solar cell is discussed. Finally, solar cell structures with reduced plasmonic losses are proposed. Copyright © 2015 John Wiley & Sons, Ltd.     

Layered MoS2 grown on c ‐sapphire by pulsed laser deposition

Layered growth of molybdenum disulphide (MoS₂) was successfully achieved by pulsed laser deposition (PLD) method on c ‐plane sapphire substrate. Growth of monolayer to a few monolayer MoS₂, dependent on the pulsed number of excimer laser in PLD is demonstrated, indicating the promising controllability of layer growth. Among the samples with various pulse number deposition, the frequency difference (A_1g–E¹_2g) in Raman analysis of the 70 pulse sample is estimated as 20.11 cm^–1, suggesting a monolayer MoS₂ was obtained. Two‐dimensional (2D) layer growth of MoS₂ is confirmed by the streaky reflection high energy electron diffraction (RHEED) patterns during growth and the cross‐sectional view of transmission electron microscopy (TEM). The in‐plane relationship, (0006) sapphire//(0002)MoS₂and sapphire//MoS₂ is determined. The results imply that PLD is suitable for layered MoS₂ growth. Additionally, the oxide states of Mo 3d core level spectra of PLD grown MoS₂, analysed by X‐ray photoelectron spectroscopy (XPS), can be effectively reduced by adopting a post sulfurization process. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Nanoimprint texturing of transparent flexible substrates for improved light management in thin‐film solar cells

We present a nanoimprint based approach to achieve efficient light management for solar cells on low temperature transparent polymer films. These films are particularly low‐priced, though sensitive to temperature, and therefore limiting the range of deposition temperatures of subsequent solar cell layers. By using nanoimprint technology, we successfully replicated optimized light trapping textures of etched high temperature ZnO:Al on a low temperature PET film without deterioration of optical properties of the substrate. The imprint‐textured PET substrates show excellent light scattering properties and lead to significantly improved incoupling and trapping of light in the solar cell, resulting in a current density of 12.9 mA/cm², similar to that on a glass substrate. An overall efficiency of 6.9% was achieved for a flexible thin‐film silicon solar cell on low cost PET substrate. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

LiFePO4 thin films grown by pulsed laser deposition: Effect of the substrate on the film structure and morphology

Well crystallized and homogeneous LiFePO₄/C (LFPO) thin films have been grown by pulsed laser deposition (PLD). The targets were prepared by the sol-gel process at 600 °C. The structure of the polycrystalline powders was analyzed with X-ray powder diffraction (XRD) data. The XRD patterns were indexed having a single phase olivine structure (Pnma). LFPO thin films have been deposited on three different substrates: aluminum (Al), stainless steel (SS) and silicon (Si) by pulsed laser deposition (PLD). The structure of the films was analyzed by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and atomic force microscopy (AFM). It is found that the crystallinity of the thin films depends on the substrate temperature which was set at 500 °C. When annealed treatments were used, secondary phases were found, so, one step depositions at 500 °C were made.Stainless steel is demonstrated to be the best choice to act as substrate for phosphate deposition. LiFePO₄ thin films grown on stainless steel plates exhibited the presence of carbon, inducing a slight conductivity enhancement that makes these films promising candidates as one step produced cathodes in Li-ion microbatteries.     

Determination of herbicides by solid phase extraction gas chromatography-mass spectrometry in drinking waters

A solid phase extraction (SPE) method has been optimized for the gas chromatography-mass spectrometry (GC-MS) simultaneous determination of herbicides belonging to the following different families: carbamate (molinate), atrazines (atrazine, propazine, simazine, ametryne, cyanazine, terbutylazine, deethylterbutylazine, deethylatrazine), dinitroaniline (trifluralin, pendimethalin), chloroacetamide (alachlor, metolachlor). Different solid substrates have been compared (C18, cyano, styrene-divinylbenzene, phenyl, graphitic carbon). The type of conditioning and elution solvent, its volume, and the sample flow rate have been considered as variables affecting the recovery yields of the herbicides.The optimized experimental conditions are C18 phase conditioned with 3 mL acetone, loaded with 1 L water sample at 5 mL min⁻¹, and eluted with 3 mL acetone. Good recoveries (included between 79% and 99%) and R.S.D. (included between 2% and 12%) have been obtained for all analytes, except for deethylatrazine whose recovery was 46 ± 7%. The recovery of deethylatrazine increases up to 94 ± 17% if a non-porous graphitic carbon is coupled to the C18 phase, keeping the other parameters constant as optimized. The optimized method has been successfully checked for the identification and quantitation of the selected herbicides in raw and drinking water samples, with quantitation limits as low as 0.01 μg L⁻¹, fully in agreement with the current legislation. The method is easily routinable. After development, the method is currently routinely applied for the analysis of herbicides in waters and, up today, more than one thousand samples have been analysed at the “Laboratorio della Società Metropolitana Acque di Torino” (Laboratory of the Municipal Waterworks of Turin) in charge of the control of drinking water quality in Torino.     

微机械共面波导腔结构的微尺度效应研究

设计了复合基底的微机械共面波导腔结构的微机械微带传输线,研究了它的相关微尺度效应。利用修正相对介电常数法和准静态法分析了微结构金属表面的粗糙度带来的结构传输特性的变化。理论分析了复合基底的微尺度残余应力及其热敏电阻,表明它们对器件的性能影响不可忽视,需要在设计时候给予考虑。利用软件模拟结构的损耗特性,比较了不同粗糙度下的传输性能参数。这些研究方法及其结论为传输线的相关微尺度领域提供了分析基础。     

Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance

The use of silicon as a substrate alternative to bulk CdZnTe for epitaxial growth of HgCdTe for infrared (IR) detector applications is attractive because of potential cost savings as a result of the large available sizes and the relatively low cost of silicon substrates. However, the potential benefits of silicon as a substrate have been difficult to realize because of the technical challenges of growing low defect density HgCdTe on silicon where the lattice mismatch is ∼19%. This is especially true for LWIR HgCdTe detectors where the performance can be limited by the high (∼5×10⁶ cm⁻²) dislocation density typically found in HgCdTe grown on silicon. We have fabricated a series of long wavelength infrared (LWIR) HgCdTe diodes and several LWIR focal plane arrays (FPAs) with HgCdTe grown on silicon substrates using MBE grown CdTe and CdSeTe buffer layers. The detector arrays were fabricated using Rockwell Scientific’s planar diode architecture. The diode and FPA and results at 78 K will be discussed in terms of the high dislocation density (∼5×10⁶ cm²) typically measured when HgCdTe is grown on silicon substrates.     

On the repulsion of an interface above a correlated substrate

We analyze a model of an interface fluctuating above a rough substrate. It is based on harmonic crystals, or lattice free fields, indexed by ^d , d 3. The phenomenon for which we want to get precise quantitative estimates is the repulsion effect of the substrate on the interface: the substrate is itself a random field, but its randomness is quenched (this generalizes the widely considered case of a flat deterministic substrate). With respect to [2] in which the substrate has been taken to be an IID field, here the substrate is an harmonic crystal, as the interface, and as such it is strongly correlated. We obtain the leading asymptotic behavior of the model in the limit of a very extended substrate: we show in particular that, to leading order, the effect of an IID substrate cannot be distinguished from the effect of an harmonic crystal substrate. We observe however that, unlike in the IID substrate case, annealed and quenched models display sharply different features.     

Large Scale Integration of Functional Radio-Frequency Flexible MEMS under Large Mechanical Strain

A versatile industrial recipe of transferring nitride microelectronic components such as micro-electromechanical systems (MEMS) onto flexible and stretchable substrates is demonstrated. This method bypasses difficulties of temperature-related processing, and is applicable to large-scale and mass production. The technological process of fabrication is presented along with its underlying structural and radio-frequency characterizations. In particular, the Raman strain shifts of aluminum nitride (AlN) thin films are determined for uniaxial and biaxial mechanical deformations. The transferring process onto polymer is also demonstrated by an adhesive bonding of AlN-based MEMS onto a 200 mm silicon (Si) wafer. The devices microstructure is assessed using X-ray before and after transferring, as well as their electrical radio-frequency (RF) features when on Si and polymer substrates. Then, RF measurements are also performed on the transferred and flexible devices; some in their relaxed states, and others in an in situ manner under an increasing macroscopic strain. It is shown that bulk acoustic wave resonator MEMS are fully functional even under 12% uniaxial stretching of the substrate.     

Flexible Oxide Thin Film Transistors,Memristors, and Their Integration

Flexible electronics have seen extensive research over the past years due to their potential stretchability and adaptability to non-flat surfaces. They are key to realizing low-power sensors and circuits for wearable electronics and Internet of Things (IoT) applications. Semiconducting metal-oxides are a prime candidate for implementing flexible electronics as their conformal deposition methods lend themselves to the idiosyncrasies of non-rigid substrates. They are also a major component for the development of resistive memories (memristors) and as such their monolithic integration with thin film electronics has the potential to lead to novel all-metal-oxide devices combining memory and computing on a single node. This review focuses on exploring the recent advances across all these fronts starting from types of suitable substrates and their mechanical properties, different types of fabrication methods for thin film transistors and memristors applicable to flexible substrates (vacuum- or solution-based), applications and comparison with rigid substrates while additionally delving into matters associated with their monolithic integration.