Multiferroicity in Perovskite Manganite Superlattice

Multiferroic properties of short period perovskite type manganite superlattice ((R₁MnO₃)_n/(R₂MnO₃)_n (n=1,2,3)) are considered within the framework of classical Heisenberg model using Monte Carlo simulation. Our result revealed the interesting behaviors in Mn spins structure in superlattice. Apart from simple plane spin cycloid structure which is shown in all manganites including bulk, film, and superlattice here in low temperature, a non-coplanar spiral spin structure is exhibited in a certain temperature range when n equals 1, 2 or 3. Specific heat, spin-helicity vector, spin correlation function, spin-helicity correlation function, and spin configuration are calculated to confirm this non-coplanar spiral spin structure. These results are associated with the competition among exchange interaction, magnetic anisotropy, and Dzyaloshinskii-Moriya interaction.     

小尺寸单轴应变Si PMOS沟道晶面/晶向选择实验新发现

小尺寸单轴应变Si p型金属氧化物半导体(PMOS)沟道反型层迁移率与晶面/晶向密切相关,应变PMOS优化设计时应合理选择沟道的晶面/晶向.目前,文献已有1.5 GPa应力强度下单轴应变Si PMOS沟道反型层迁移率按晶面/晶向排序的理论模型.然而,在器件实际制造过程中,覆盖SiN应力膜工艺是固定的,由于沟道弹性劲度系数具有各向异性,这样,不同晶面/晶向应变PMOS沟道所受应力强度不同,进而导致在实际工艺下沟道反型层迁移率晶面/晶向排序理论模型"失效".针对该问题,本文采用中国科学院微电子研究所40 nm工艺流程制备了不同晶面/晶向40 nm沟道小尺寸单轴应变Si PMOS与未应变Si PMOS,并通过器件转移特性测试,获得了小尺寸单轴应变Si PMOS反型层迁移率晶面/晶向排序结论.此有关小尺寸单轴应变Si PMOS沟道反型层迁移率晶面/晶向排序的相关结论,由于考虑了工艺实现因素,与文献理论预测排序结果相比,更适于指导实际器件制造;相关分析方法也可为其他应变材料沟道MOS相关问题的解决提供重要技术参考.     

钙钛矿型氧化物非常规铁电研究进展

钙钛矿型氧化物因具有丰富的磁性、铁电、力学和光学等诸多功能属性,在电子信息通信材料器件领域中有广阔的应用前景.在各种物理性质之中,铁电极化因其产生机制多样,并能与磁性和晶格应变相互耦合形成多铁性等特点,近十多年来一直被作为凝聚态物理研究的国际热点问题.与以自发极化作为初级序参量的常规铁电材料不同,非常规铁电材料中的铁电极化是被其他的序参量诱导而产生的.本综述围绕无机钙钛矿型氧化物非常规铁电体的研究进展进行了总结.回顾了该体系经典唯象理论和原子尺度的微观模型,有序排列的人工钙钛矿超晶格型结构,以及稀土正铁氧体单晶的反铁磁畴壁结构中非常规铁电的极化强度大小及其诱导机制,为系统理解非常规铁电提供了理论途径.     

Surface superlattice solitons in nonlocal nonlinear media

We analyse surface solitons at the interface between a one-dimensional photonic superlattice and a uniform medium with weak nonlocal nonlinearity. We demonstrate that in deep lattices there exist three kinds of surface solitons when the propagation constant exceeds a critical value, including two on-site solitons and one off-site soliton. These three kinds of surface solitons have unique dynamical properties. If the relative depth of the superlattice is low, there is only one kind of off-site soliton; however, the solitons of this kind can propagate stably, unlike their deep superlattice counterparts. Dipole surface solitons are also investigated, and the stable domain is given.     

Intraband dynamics and terahertz emission in biased semiconductor superlattices coupled to double far-infrared pulses

This paper studies both the intraband polarization and terahertz emission of a semiconductor superlattice in combined dc and ac electric fields by using the superposition of two identical time delayed and phase shifted optical pulses. By adjusting the delay between these two optical pulses, our results show that the intraband polarization is sensitive to the time delay. The peak values appear again for the terahertz emission intensity due to the superposition of two optical pulses. The emission lines of terahertz blueshift and redshift in different ac electric fields and dynamic localization appears. The emission lines of THz only appear to blueshift when the biased superlattice is driven by a single optical pulse. Due to excitonic dynamic localization, the terahertz emission intensity decays with time in different dc and ac electric fields. These are features of this superlattice which distinguish it from a superlattice generated by a single optical pulse to drive it.     

超晶格量子阱的沟道辐射及其谱分布

在经典物理框架内和偶极近似下, 导出了超晶格量子阱沟道辐射频率和辐射谱分布。指出了对于自发辐射谱分布, 存在一个普适的线型因子, 而粒子的最大辐射能量与相对论因子γ 有关, 且与γ3/2成正比。以正弦平方势为例进行了具体讨论。结果表明, 由于势阱深度和噪音的影响, 谐波数l只取少数几个值。超晶格量子阱沟道辐射只存在不多的几条谱线, 为进一步应用提供了可能。最后, 还给出了一种可能的实验方案, 讨论了如何利用弯晶把超晶格量子阱的沟道辐射改造为相干辐射。 In the frame of classical physics and the dipole approximation the radiation frequency and the spectral distribution are derived for the channeling radiation of a charged particle in a superlattice quantum well. It indicated that there is a line type factor f(ξ) suited to various cases in the spontaneous radiations spectrum. Results also show that the maximum radiation energy is proportional to γ3/2 , but the relativistic effects have double effects in the spontaneous radiation of a charged particle. The case for the sine squared potential is discussed specifically. The harmonic number can be defined as a few variable values by the effects of the potential well depth and noise. In general there is a few spectral lines in the channeling radiation spectrum for the superlattice quantum well, and possibilities are provided for further application. Finally, a possible experimental scheme is proposed, and it is discussed that how to transform the channeling radiation in the quantum well into the cohenent radiation by the bent crystal.     

The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs

Based on the exact resultant solution of two-dimensional Poisson's equation in strained Si and Si_{1 - X}Ge_X layer, a simple and accurate two-dimensional analytical model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator (SGOI) MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects (SCE), the drain-induced barrier-lowering (DIBL) and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs.     

Strategy to Induce Multiferroic Property in (RTiO3)n/(RVO3)n Superlattices: A First-Principles Study

By first-principles calculations, lanthanide contraction is applied on a 1/1 (with symmetric center) and a 2/2 (with non-centrosymmetric polar structure) RTiO₃/RVO₃ superlattices to realize quasi-continuous structural distortion modulation. The strong correlations of microscopic structural distortion, magnetic coupling and charge disproportionation accompanying metal-insulator transition (MIT) are clarified. It is found that the effect of lanthanide contraction on the 1/1 and 2/2 RTiO₃/RVO₃ superlattices can induce ferromagnetic to antiferromagnetic transition within ab VO₂ plane and the MIT occurs within these superlattices. And the MIT phenomenon is attributed to the charge disproportionation on V sites caused by the magnetic coupling transition. More structural distortion in the 2/2 RTiO₃/RVO₃ superlattice is necessary than that of the 1/1 RTiO₃/RVO₃ superlattice to induce the similar magnetic and MIT transition originating from the smaller interface/volume ratio. Based on these results, combining lanthanide contraction and epitaxial strain effects, multiferroic property is realized on 2/2 YTiO₃/YVO₃ superlattice. Among all the structural parameters, aspect ratio c/a and Ti−O−V bond angles along the [001] direction are found to play the vital roles in the relevant transition process. Therefore, our calculations provide a microscopic guidance to design and synthesize new multiferroic materials.     

Localization of excited carriers in organometallic vapor-phase epitaxial grown Zn<Subscript>x</Subscript>Cd<Subscript>1−x</Subscript>Se epilayers with partial existence of lateral compositionally modulated superlattice

The structural and optical properties of organometallic vapor-phase epitaxial (OMVPE) grown Zn_xCd_1−xSe epilayers on the (001) InP substrate were studied by transmission electron microscopy (TEM) and photoluminescence (PL). The TEM results showed the spontaneous formation of compositionally modulated (CM) superlattices along the [110] direction with a period of ∼10–20 nm at some places in the epilayer. In the PL measurements, we found an anomalous red shift of PL with a decrease in temperature (from 170 K to 100 K) and a large blue shift up to 40 meV with an increase in excitation power. We suggested that the anomalous red shift of PL is caused by a localization of photo-excited carriers from places containing a normal random alloy to places containing a CM superlattice, which has a narrower bandgap, and the large blue shift is caused by a saturation of energy states in the CM superlattice under high excitation. The narrower bandgap of the CM superlattice is supported by a polarized PL study, where the low energy part of PL is strongly polarized along the [ ] direction, is consistent with the reduced symmetry of a CM superlattice. A two-level model was proposed to quantitatively account for the experimental observations.     

Interface strain in InGaAs-InP superlattices

Strain has been measured within (001) oriented OMVPE grown multilayer superlattices consisting of thin As-compound layers in InP and thin P-compound layers in GaAs. From the strain behavior, it is interpreted that As rapidly replaces P on an InP surface exposed to AsH₃ and P slowly replaces As on a As-terminated surface exposed to PH₃. This results in incorporation of an InAs-like strain in InP whose magnitude depends on the nature of the As-terminated surface. At growth temperatures above 600°C, the strain is equivalent to about one monolayer of InAs; while below 600°C, it is equivalent to two monolayers of InAs. PH₃ interaction with GaAs surfaces is sufficiently slow that GaP-like strain is observed only when deliberate interrupts under PH₃ are introduced. GaP grown on GaAs at 650°C is found to incorporate enough residual As to sustain a layer composition of GaAs_0.5P_0.5 over the first several monolayers.