宽带偏振不灵敏InGaAs半导体光放大器

采用压应变InGaAs量子阱和张应变InGaAs准体材料交替混合的有源结构，研制了宽带偏振不灵敏的半导体光放大器．此放大器在100～250mA的工作电流范围内，获得了大于70nm的3dB光带宽；在0～250mA工作电流和3dB光带宽波长范围内，偏振灵敏度小于1dB．对于1.55μm的信号光，在200mA的注入电流下获得了15.6dB的光纤到光纤的增益、小于0.7dB的偏振灵敏度和4.2dBm的饱和输出功率．     

ON THE METHOD OF ORTHOGONALITY CONDITIONS FOR SOLVING THE PROBLEM OF LARGE DEFLECTION OF CIRCULAR PLATE

In this paper,we reexamine the method of successive approximation presented byProf.Chien Wei-zang for solving the problem of large deflection of a circular plate,and findthat the method could be regarded as the method of strained parameters in the singularperturbation theory.In terms of the parameter representing the ratio of the centerdeflection to the thickness of the plate,we make the asymptotic expansions of thedeflection,membrane stress and the parameter of load as in Ref.[1],and then give theorthogonality conditions(i.e.the solvability conditions)for the resulting equations,bywhich the stiffness characteristics of the plate could be determined.It is pointed out thatwith the solutions for the small deflection problem of the circular plate and theorthogonality conditions,we can derive the third order approximate relations between theparameter of load and the center deflection and the first-term approximation of membranestresses at the center and edge of the plate without solving the differential equ     

单轴应变硅N沟道金属氧化物半导体场效应晶体管电容特性模型

电容特性模型是单轴应变硅金属氧化物半导体场效应晶体管(Si MOSFET)和电路进行瞬态分析、交流小信号分析、噪声分析等的重要基础. 本文首先建立了单轴应变Si NMOSFET 的16 个微分电容模型, 并将微分电容的仿真结果与实验结果进行了比较, 验证了所建模型的正确性. 同时对其中的关键性栅电容C_gg 与应力强度、偏置电压、沟道长度、栅极掺杂浓度等的关系进行了分析研究. 结果表明, 与体硅器件相比, 应变的引入使得单轴应变Si NMOSFET器件的栅电容增大, 随偏置电压、沟道长度、栅极掺杂浓度的变化趋势保持不变.     

nBn型InAs/GaSb Ⅱ类超晶格红外探测器光电特性研究

设计了nBn结构的InAs/GaSb II类超晶格红外探测器,从理论和实验两方面对nBn器件的暗电流特性进行了研究,研究结果表明:理论计算的暗电流和实际测试结果趋势一致。另外,研制了p-i-n结构器件并与nBn器件进行了比较,测试结果显示:在77 K温度下,nBn器件的暗电流要比p-i-n器件暗电流小2个量级。温度升高到150 K时,nBn器件暗电流变大2个量级,而p-i-n器件暗电流变大4个量级;nBn器件峰值探测率下降到1/5,p-i-n器件峰值探测率下降2个量级。可见nBn器件适合高温工作,适合高性能红外焦平面探测器的研制。     

Molecular‐Scale Hybridization of Clay Monolayers and Conducting Polymer for Thin‐Film Supercapacitors

Development of electrode materials with well‐defined architectures is a fruitful and profitable approach for achieving highly‐efficient energy storage systems. A molecular‐scale hybrid system is presented based on the self‐assembly of CoNi‐layered double hydroxide (CoNi‐LDH) monolayers and the conducting polymer (poly(3,4‐ethylene dioxythiophene):poly(styrene sulfonate), denoted as PEDOT:PSS) into an alternating‐layer superlattice. Owing to the homogeneous interface and intimate interaction, the resulting CoNi‐LDH/PEDOT:PSS hybrid materials possess a simultaneous enhancement in ion and charge‐carrier transport and exhibit improved capacitive properties with a high specific capacitance (960 F g^–1 at 2 A g^–1) and excellent rate capability (83.7% retention at 30 A g^–1). In addition, an in‐plane supercapacitor device with an interdigital design is fabricated based on a CoNi‐LDH/PEDOT:PSS thin film, delivering a significantly enhanced energy and power output (an energy density of 46.1 Wh kg^–1 at 11.9 kW kg^–1). Its application in miniaturized devices is further demonstrated by successfully driving a photodetector. These characteristics demonstrate that the molecular‐scale assembly of LDH monolayers and the conducting polymer is promising for energy storage and conversion applications in miniaturized electronics.     

GaAs外延薄膜的As缺位研究

研制太赫兹量子级联激光器的核心是制备以GaAs为代表的量子阱超晶格,在制备GaAs为代表的量子阱超晶格过程中,需要解决As缺位等基础性物理问题。采用激光分子束外延技术制备了GaAs外延薄膜,研究了实验参数对GaAs薄膜性能,特别是As缺位的影响。在线RHEED测试结果表明,GaAs可以实现外延生长。原位XPS和UPS等测试研究结果表明,激光分子束外延技术制备GaAs外延薄膜过程中存在As缺位问题,激光能量对GaAs薄膜中As含量具有明显的影响,要获得理想成分比的GaAs外延薄膜,需要较高的脉冲激光能量(600 mJ)。     

InAs/GaSb超晶格中波焦平面材料的分子束外延技术

报道了InAs/GaSb超晶格中波材料的分子束外廷生长技术研究.通过改变GaSb衬底上分子束外延InAs/GaSb超晶格材料的衬底温度,以及界面的优化等,改善超晶格材料的表面形貌和晶格失配,获得了晶格失配△a/a=1.5×10-4,原子级平整表面的InAs/GaSb超晶格材料,材料77 K截止波长为4.87 μm.