New Linear Codes Over \mathbb{F}_3 and \mathbb{F}_5 and Improvements on Bounds

One of the most important problems of coding theory is to constructcodes with best possible minimum distances. In this paper, we generalize the method introduced by [8] and obtain new codes which improve the best known minimum distance bounds of some linear codes. We have found a new linear ternary code and 8 new linear codes over with improved minimumdistances. First we introduce a generalized version of Gray map,then we give definition of quasi cyclic codes and introduce nearlyquasi cyclic codes. Next, we give the parameters of new codeswith their generator matrices. Finally, we have included twotables which give Hamming weight enumerators of these new codes.     

带DGS结构的宽带微带线准椭圆函数滤波器设计

准椭圆滤波器体积小，重量轻，结构紧凑，比契比雪夫滤波器有更好的过渡特性，更高的带外抑制，在卫星通信和移动通信中有广泛的应用前景。但在用准椭圆滤波器实现宽带滤波器时，有时会遇到耦合间隙过小难以加工的问题。在准椭圆滤波器的谐振器底板加入缺陷接地结构（DGS），可以增强谐振器之间的耦合。应用DGS结构，用较宽的耦合间隙实现较强的耦合，从而使宽带滤波器物理上更容易实现。应用三维电磁场仿真软件，设计了一种带DGS结构的宽带微带线准椭圆函数滤波器。     

45nm工艺与关键技术

介绍了45 nm芯片所采用的关键工艺技术:193 nm ArF干法/浸没式光刻技术、低k电介质技术、高k电介质技术和应变硅技术等。英特尔45 nm全功能153 MB SRAM芯片与65 nm芯片相比,晶体管密度提高了2倍,晶体管开关速度提高20%以上,晶体管漏电流降低到65 nm芯片的1/5,存储单元面积为0.346μm2。指出英特尔45 nm芯片MPU将在2007年下半年实现量产,并且继英特尔之后,TI、IBM、特许、英飞凌、三星、台积电和台联电等均已推出了45 nm芯片,说明45 nm芯片技术正在日益走向成熟。     

Quasi‐random graphs with given degree sequences

It is now known that many properties of the objects in certain combinatorial structures are equivalent, in the sense that any object possessing any of the properties must of necessity possess them all. These properties, termed quasirandom, have been described for a variety of structures such as graphs, hypergraphs, tournaments, Boolean functions, and subsets of Z _n, and most recently, sparse graphs. In this article, we extend these ideas to the more complex case of graphs which have a given degree sequence. © 2007 Wiley Periodicals, Inc. Random Struct. Alg., 2008     

Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs

The structural properties of a-Al₂O₃/Ge, a-Al₂O₃/In_0.5Ga_0.5As and a-Al₂O₃/In_0.5Al_0.5As/InGaAs interfaces were investigated by density-functional theory (DFT) molecular dynamics (MD) simulations. Realistic a-Al₂O₃ samples were generated using a hybrid classical-DFT MD “melt and quench” approach. The interfaces were formed by annealing at 700 K/800 K and 1100 K with subsequent cooling and relaxation. The a-Al₂O₃/Ge interface demonstrates pronounced interface intermixing and interface bonding exclusively through Al–O–Ge bonds generating high interface polarity. In contrast, the a-Al₂O₃/InGaAs interface has no intermixing, Al–As and O–In/Ga bonding, low interface polarity due to nearly compensating interface dipoles, and low substrate deformation. The a-Al₂O₃/InAlAs interface demonstrated mild intermixing with some substrate Al atoms being adsorbed into the oxide, mixed Al–As/O and O–Al/In bonding, medium interface polarity, and medium substrate deformation. The simulated results demonstrate strong correlation to experimental measurements and illustrate the role of weak bonding in generating an unpinned interface for metal oxide/semiconductor interfaces.     

Hole effective mass in strained Si (111)

The directional, averaged, and density-of-states effective masses of holes have been calculated for strained Si/(111)Si1-xGex. The results for the directional effective mass show that the effect of strain makes the constant energy surface of heavy holes more obvious warping than that in relaxed Si. The [111] and [110] directional effective masses of heavy holes decrease significantly under strain. It is found that the averaged effective mass of heavy holes decreases with increasing Ge fraction, while that o...     

Halogen lamp rapid thermal annealing of Si- and Be-implanted In0.53Ga0.47As

Halogen lamp rapid thermal annealing was used to activate 100 keV Si and 50 keV Be implants in In_0.53Ga_0.47As for doses ranging between 5 × 10¹²−4 × 10¹⁴ cm⁻². Anneals were performed at different temperatures and time durations. Close to one hundred percent activation was obtained for the 4.1 × 10¹³ cm⁻² Si-implant, using an 850° C/5 s anneal. Si in-diffusion was not observed for the rapid thermal annealing temperatures and times used in this study. For the 5 × 10¹³ cm⁻² Be-implant, a maximum activation of 56% was measured. Be-implant depth profiles matched closely with gaussian profiles predicted by LSS theory for the 800° C/5 s anneals. Peak carrier concentrations of 1.7 × 10¹⁹ and 4 × 10¹⁸ cm⁻³ were achieved for the 4 × 10¹⁴ cm⁻² Si and Be implants, respectively. For comparison, furnace anneals were also performed for all doses.     

Colour symmetry double point groups

Thirty four distinct composition series arising out of the 32 crystallographic double point groups are employed to re-derive in a simple and elegant fashion all the 169 distinct colour symmetry groups generated by the 32 double point groups, exploiting the idea of colour generators. The advantage of the method employed and some possible applications of these colour groups are discussed. The resulting colour groups are tabulated.     

Selective LPE-growth of ln0.53Ga0.47As on semi-insulating InP

Selective liquid phase epitaxy (SLPE) of high purity(n = 2 × 10¹⁵ cm^-3) In_0.53Ga_0.47As on SiO₂-masked (100)-InP:Fe substrates has been performed and investigated using Normarski interference contrast microscopy and SEM. The infill growth was done at low temperatures (˜ 585° C) directly into chemically (HC1:CH₃COOH:H₂O₂) etched cavities without melt-etching. Square and circular recesses of 2–3 μm depth and varying size (100-500 μm) have been used in contrast to common reported regrowth experiments in long channels. Enormously enhanced growth rates have been found within the small structures. Orientation dependent growth effects are described. The realization of selectively grown areas with flat surface morphology has been achieved which is important for optoelectronic integration. Most information contained in this paper was presented at the 27th Electronic Materials Conference, Boulder, Co., June 20, 1985.