III–V quantum devices and circuits based on nanoscale Schottky gate control of hexagonal quantum wire networks

The concept, the present status, key issues and future prospects of a novel hexagonal binary decision diagram (BDD) quantum circuit approach for III–V quantum large-scale integrated circuits (QLSIs) are presented and discussed. In this approach, the BDD logic circuits are implemented on III–V semiconductor-based hexagonal nanowire networks controlled by nanoscale Schottky gates. The hexagonal BDD QLSIs can operate at delay-power products near the quantum limit in the quantum regime as well as in the many-electron classical regime. To demonstrate the feasibility of the present approach, GaAs Schottky wrap gate (WPG)-based single-electron BDD node devices and their integrated circuits were fabricated and their proper operations were confirmed. Selectively grown InGaAs sub-10 nm quantum wires and their hexagonal networks have been investigated to form high-density hexagonal BDD QLSIs operating in the quantum regime at room temperature.     

Deep levels in bulk LEC single crystal IxGa1-xAs

Bulk single crystals of In_xGa_1-xAs (0.01 <x < 0.12) were successfully grown by the Liquid Encapsulated Czochraski (LEC) technique. These crystals are of high quality and can provide tunable substrate material for epitaxial application, since the lattice constant may be adjusted by varying the composition. Nominally undoped crystals were semi-insulating as grown ifx is less than about 0.05. Semi-insulating crystals with higher In composition can be obtained by chromium doping during crystal growth. The asgrown crystals were studied by 4.2 K photoluminescence spectroscopy (PL) and thermally stimulated current spectroscopy (TSC). Results from PL measurements indicate good crystal quality and impurity control. TSC spectra reveal several bulk traps in undoped and Cr doped semi-insulating samples. The activation energies of these traps decrease as In composition is increased. The amount of change in activation energy is about one third of the bandgap shrinkage due to increased In concentration.     

Singularities in Quasi-Banach Spaces with Applications to Semilinear Elliptic Equations I

The paper deals with the extension of the singularity theory which was elaborated for Banach spaces to quasi-Banach spaces. For general quasi-Banach spaces some striking tools fail: not locally convex, the dual space may be trivial,…. Applying the concept of dual rich quasi - Banach spaces and results about Fredholm maps some results of the classical theory can be carried over. As an application we show in the continuation of this part how one can use these results for the investigation of the solution structure of semilinear elliptic boundary value problems in function Rpaces of Besov - Triebel - Lizorkin type.     

Quasi—Einstein Hypersurfaces in a Hyperbolic Space

§1.　IntroductionLetRijbethecomponentsofRiccitensorofann-dimensionalRiemannianmanifoldM.IfRij=Agij Bξiξj,　(i,j=1,2,…,n)(1.1)whereξisanunitvectorfield,thenMiscalledaquasi-EinsteinmanifoldanddenotedbyQE(ξ).Ifξisanisotropicvectorfield,thenMiscalledageneralizedquasi-Einsteinmanifold.Intheequality(1.1),AandBarescalarfunctions.WeknowQE(ξ)manifoldisEinsteinwhenB≡0.Especially,if〈ξ,ξ〉=e=±1,thenQE(ξ)iscalledanormalquasi-Einsteinmani-fold.Itiseasytoknowfrom[1]and[2]:Rij=R-Tn-1…     

Strain from modified interface compositions in InGaAs/InP superlattices

Thin strained regions have been inserted at the interfaces of lattice-matched InGaAs/lnP superlattices to assess growth conditions for tailoring of localized compositional changes and for studying As-P intermixing behavior during heterojunction growth. Also, precise growth rates of binary composition layers were determined from specially designed superlattices using strained layers of common anion compounds inserted periodically into InP and GaAs. Growth rates of fractional monolayers are found to be identical to thick layer growth rates. When thin InAs, GaAs, GaP, ALAs, or AIP layers were inserted at the InGaAs/lnP heterojunctions, the measured strain at either one or both interfaces was equal to the strain predicted from the growth rate x time product. Excess strain seen in some cases is due to a change in As-P intermixing and this component can be separated from the predicted strain. Insertion of Ga-compounds at the InP-grown-on-InGaAs interface causes interface roughening which degrades the superlattice. For all other compositions the thin, highly strained regions are not detrimental to the crystalline quality of the periodic structure.     

Polaroid operators and Weyl's theorem

``Polaroid elements" represent an attempt to abstract part of the condition, ``Weyl's theorem holds" for operators.

     

Electron density investigation of a push-pull ethylene (C14H24N2O2.H2O) by X-ray diffraction at T = 21 K

The electron charge distribution in a strongly twisted push-pull ethylene [PPE, 3-(1,3-diisopropyl-2-imidazolidinylidene)-2,4-pentanedione] has been determined by low temperature (T = 21 K) single-crystal X-ray diffraction analysis. The derived electronic properties are consistent with a zwitterionic molecule, as indicated by a charge transfer of 0.82(16) e from the push to the pull moieties and a charge polarization of 0.29(7) e on the olefinic bond. A dipole moment of 12(3) D has been determined, which compares well with ab initio theoretical results in terms of both modulus and orientation. The second moments, which have also been obtained with good precision, characterize PPE as a highly quadrupolar molecule. The special electronic features of the molecule confer particular topological properties to the electron density distribution, as evidenced by comparison with "standard" organic molecules. The crystallographic asymmetric unit of the present system includes one water molecule, which is hydrogen bonded to PPE. Its topological properties have also been investigated, together with an analysis of the hydrogen bonds involved.     

Generalized Bicyclic Semigroups and Jones Semigroups

In this paper, we consider the generalized bicyclic semigroups B_n = a, b | aⁿb = 1 and the Jones semigroups A_n = a, b | aⁿ⁺¹b = a. They are the generalizations of the bicyclic semigroup B = a, b | ab = 1 and its analogous semigroup A = a, b | a²b = a discovered by P.R., Jones in 1987. The word problem for these kinds of semigroups is solved. It is proved that, for n 2, B_n are bisimple right inverse but not inverse semigroups and that the semigroup C = a, b | a²b = a, ab² = b is the smallest idempotent-free homomorphic image of A_n. Moreover, we also prove that A_n and A_m are mutually embeddable but not isomorphic with each other if n m. As a consequence, different kind of -nontrivial [0-]simple semigroups without idempotents are discussed.AMS 1991 Subject Classification: primary 20M10 secondary 20M05.Supported by NNSF of China (19671063) and KSRF of Sichuan Education Committee ([1999]127).