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101.
Selective liquid phase epitaxy (SLPE) of high purity(n = 2 × 1015 cm-3) In0.53Ga0.47As on SiO2-masked (100)-InP:Fe substrates has been performed and investigated using Normarski interference contrast microscopy and SEM.
The infill growth was done at low temperatures (˜ 585° C) directly into chemically (HC1:CH3COOH:H2O2) etched cavities without melt-etching. Square and circular recesses of 2–3 μm depth and varying size (100-500 μm) have been
used in contrast to common reported regrowth experiments in long channels. Enormously enhanced growth rates have been found
within the small structures. Orientation dependent growth effects are described. The realization of selectively grown areas
with flat surface morphology has been achieved which is important for optoelectronic integration.
Most information contained in this paper was presented at the 27th Electronic Materials Conference, Boulder, Co., June 20,
1985. 相似文献
102.
103.
Isabelle Lefebvre 《Set-Valued Analysis》2001,9(3):273-288
In the first place, we present a quasi fixed-point theorem for a correspondence defined on some infinite-dimensional locally convex topological vector space such that some variables have open lower sections and the other ones are upper semicontinuous.In the second place, we propose a direct application of the quasi fixed-point result in an economic model. More precisely, we prove a nonemptiness result of the core of an exchange economy with asymmetric information, a continuum of states and a finite number of commodities. 相似文献
104.
应用固相外延模型来模拟单晶Si的连续Nd:YAG激光退火过程,在低功率密度连续激光退火下,用准静态模型模拟辐照区向非辐照区的径向传导散热。在数值计算中,应用部分线性法处理非线性非齐次热传导方程,得到相应的隐格式差分方程,再用追赶法求解隐格式差分方程,得出绝热边界条件下的温度的时间和空间分布,从而得出激光退火的再结晶厚度。当激光波长λ=1.06μm、功率密度io=700W/cm^2。预热温度T0=523K时,经过0.7秒,表面温度度升到1290K左右,再结晶厚度约为0.5μm。 相似文献
105.
我们设计了包含准平面四配位碳原子的Fullerene[51]及其八个包含准平面四配位碳原子的衍生物,而且采用B3LYP方法研究了它们的结构、稳定性和成键性质。结果表明:这九种新型化合物是稳定的,它们的垂直电离能很大,而垂直电子亲和势相对较小。这些结构都包含五员环和六员环、以及更大的十员环。 相似文献
106.
J. S. Major L. J. Guido N. Holonyak K. C. Hsieh E. J. Vesely D. W. Nam D. C. Hall J. E. Baker P. Gavrilovic K. Meehan W. Stutius J. E. Williams 《Journal of Electronic Materials》1990,19(1):59-66
In these experiments impurity-induced layer disordering (IILD) utilizing chemical reduction of SiO2 by Al (from Al0.8Ga0.2As) is employed to generate Si and O to effect layer disordering. The SiO2-Al0.8Ga0.2As reaction is studied with respect to annealing ambient. By controlling the extent of disordering via As4 overpressure, closely spaced (∼1μm) Si-O IILD buried heterostructure lasers can be optically coupled or uncoupled. Direct observation of O incorporation into
the buried layers is shown using secondary ion mass spectroscopy (SIMS). The thermal stability of separate-confinement AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure (QWH) laser crystals is investigated using SIMS, transmission electron microscopy (TEM), and
photoluminescence (PL) measurements. The data show that the thermal stability of a strained-layer In0.1Ga0.9As quantum well (QW) is strongly dependent upon: (1) the layer thickness and heterointerfaces of the AlyGa1−yAs-GaAs waveguide layers located directly above and below the QW, (2) the type of surface encapsulant employed, and (3) the
annealing ambient. Narrow single-stripe (<2μm) lasers fabricated via Si-O diffusion and layer disordering exhibit low threshold currents (Ith ∼ 4 mA) and differential quantum efficiencies,η, of 22% per facet under continuous (cw) room-temperature operation. 相似文献
107.
Band structure parameters such as the conduction band edge, the valence band edge and the quasi‐particle gap of diffusing CdSe quantum dots (Q‐dots) of various sizes were determined using cyclic voltammetry. These parameters are strongly dependent on the size of the Q‐dots. The results obtained from voltammetric measurements are compared to spectroscopic and theoretical data. The fit obtained to the reported calculations based on the semi‐empirical pseudopotential method (SEPM)—especially in the strong size‐confinement region, is the best reported so far, according to our knowledge. For the smallest CdSe Q‐dots, the difference between the quasi‐particle gap and the optical band gap gives the electron–hole Coulombic interaction energy (Je1,h1). Interband states seen in the photoluminescence spectra were verified with cyclic voltammetry measurements. 相似文献
108.
Quasi‐bubble finite element approximations to the shallow water equations are investigated focusing on implementations of the surface elevation boundary condition. We first demonstrate by numerical results that the conventional implementation of the boundary condition degrades the accuracy of the velocity solution. It is also shown that the degraded velocity leads to a critical instability if the advection term is present in the momentum equation. Then we propose an alternative implementation for the boundary condition. We refer to this alternative implementation as a discontinuous boundary (DB) implementation because it introduces at each boundary node two independent mass–flux values that result in a discontinuity at the boundary. Numerical results show that the proposed DB implementation is consistent, stabilizes the quasi‐bubble scheme, and leads to second‐order accuracy at the surface elevation specified boundary. Copyright © 2004 John Wiley & Sons, Ltd. 相似文献
109.
多点光纤光栅测温系统在渗流监测中的应用研究 总被引:1,自引:0,他引:1
为了监测土石坝内的渗流水的情况,提出一种多点光纤Bragg 光栅传感器(FBG)的结构,采用InGaAs光电探测器阵列探测光强的光纤光栅传感阵列的波长解调方法。根据室内实验结果,对多点光纤光栅传感系统的可行性和监测数据的可靠性进行分析, 给出用于坝体温度场监测的光纤光栅传感器波长温度响应灵敏度可达到0.0091nm/℃。工程中采用电热脉冲方式对传感器附近小范围的土壤进行加热,使其与水的温度形成一定的温差,实测结果表明可以利用光纤光栅传感器监测温度异常的方法判断是否发生渗流, 从而实现对坝体内集中渗漏点的定位和自动监测。在系统防雷击、抗干扰性方面, 采用光纤光栅传感监测系统与传统仪器相比具有明显优势。 相似文献
110.