Successive stepwise evolution of host layer‐stacking framework upon the intercalation of mobile vapor guests within side‐chain layers

For the ordered phases of hairy‐rod semiconductive poly(2,5‐bis(3‐tetradecylthiophene‐2‐yl)thieno[3,2‐b]thiophene) (PBTTT) sandwiched in between crystalline platelets of hexamethylbenzene, the successive stepwise evolution of layer‐stacking framework upon guest intercalation has been studied in this research. The direct consequence of the guest intercalation into side‐chain layers is evaluated to cause the lateral shift of thiophene backbones along π–π stacking, resulting in stepwise shift of ultraviolet absorption wavelength. The thermal motions of vapor guests within disordering side‐chain layers subsequently cause progressive expansion of host stacking framework. With the increase in side‐chain length, thicker layers of disordering side chains in liquid crystals (LCs) accommodate additional vapor guests and larger amplitudes of thermal motions of guests, hence promoting the level of reversible d‐spacing change. The mixing between mobile vapor guests and aliphatic side chains is clarified as the mechanism of guest intercalation, which rationalizes successive guest intercalation during heating and the contribution of disordering side‐chain layers. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2017 , 55, 1448–1456     

Temperature effect on threshold voltage and optical property of twisted nematic liquid crystal with applied different voltages

In this paper, temperature-dependent birefringence theory of liquid crystal is used to investigate the temperature effect on the threshold voltage. An expression for describing the non-linear relationship between the threshold voltage and temperature is deduced. In addition, we theoretically discuss the temperature effect on the transmitted ratio of the namatic twisted liquid crystal without the applied voltage and with the applied voltage. It is found that the transmitted ratio is decreased linearly as temperature is increased when the liquid crystal is not applied with voltage, but the transmitted ratio is increased linearly as temperature is increased when the liquid crystal is applied with voltage. The threshold voltages and the transmitted ratio are measured at different temperatures. The experimental data are consistent with the theoretical calculated results.     

大电流电动汽车电池充电电流电压反馈系统设计

针对电动汽车厂家研发了电动汽车电池充电系统,设计了一种大电流低电压电池充电系统。系统采用了PIC16F877A单片机作为电子控制单元核心,对规格为50 A、3.7 V的电池组进行充电。重点对电流电压采样电路进行了设计和研究。通过建立采样电路的仿真模型。并用实际电压电流数据对本采样系统进行了验证。实验证明,系统提出的电流电压采样具有较高的精度、线性度,且能满足长期稳定运行的实际需求。     

雪崩击穿条件下4.5kV IGBT器件的背面优化研究

The static avalanche breakdown behavior of 4.5 kV high-voltage IGBT is studied by theory analysis and experiment. The avalanche breakdown behaviors of the 4.5 kV IGBTs with different backside structures are investigated and compared by using the curve tracer. The results show that the snap back behavior of the breakdown waveform is related to the bipolar PNP gain, which leads to the deterioration of the breakdown voltage. There are two ways to optimize the backside structure, one is increasing the implant dose of the N C buffer layer, the other is decreasing the implant dose of the P C collector layer. It is found that the optimized structure is effective in suppressing the snap back behavior and improving the breakdown characteristic of high voltage IGBT.     

Effect of Ge-GeO2 co-doping on non-ohmic behaviour of TiO2-V2O5-Y2O3 varistor ceramics

An investigation was made into the effect of doping with the elemental crystal Ge or/and GeO₂ on the TiO₂-V₂O₅-Y₂O₃ varistor ceramics. The result shows that as the doping contents of V₂O₅ and Y₂O₃ are 0.5 mol%, respectively, co-doping with 0.3 mol% Ge and 0.9 mol% GeO₂ makes the highest α value (α = 12.8), the lowest breakdown voltage V_1mA (V_1mA = 15.8 V/mm) and the highest grain boundary barrier Φ_B (Φ_B = 1.48 eV), which is remarkably superior to the TiO₂-V₂O₅-Y₂O₃ varistor ceramics undoped with Ge and GeO₂ and mono-doped with Ge or GeO₂. The TiO₂-V₂O₅-Y₂O₃-Ge-GeO₂ ceramic has the prospect of becoming a novel varistor ceramic with excellent electrical properties.     

模式自动切换电荷泵的开关感应误差电压的分析

本文描述了一个关于模式自动切换电荷泵的开关感应误差电压的精确表达式,此误差电压会在输出电容上产生一个冲击电压。这将会导致一些不希望得到的结果：大的输出电压纹波,有害的高频噪声和低的效率。通过这个表达式可以得到一些减小输出电容上冲击电压的方法。一个等效集总模型被用来推出此表达式。本文中的模式自动切换电荷泵使用SILTERRA0.18?m CMOS工艺实现。实验结果显示冲击电压的值与表达式的计算结果十分吻合。通过比较三个不同的经过改进的版本的测试结果,可以看到由开关感应产生的过冲电压明显的减小。     

4500V SPT IGBT 动静态损耗优化

本文关注高压IGBT动静态性能的优化。对4500V增强型平面IGBT进行研究,该结构在阴极一侧具有载流子存储层。其中垂直结构采用软穿通(SPT)结构,顶部结构采用增强型平面结构,该结构被称为SPT IGBT,仿真结果显示4500V SPT 具有软关断波形,与SPT结构相比提升了导通压降和关断损耗之间的折衷关系。同时,对不同载流子存储层掺杂浓度对动静态性能的影响也进行了研究,以此来优化SPT IGBT的动静态损耗。     

输入串联输出并联全桥变换器强制负载法均压策略

输入串联输出并联全桥变换器在高压大功率DC-DC场合应用十分广泛.本文为了解决输入串联输出并联全桥变换器的输入不均压问题,探究了输入串联输出并联全桥变换器输入侧分压不均和输出侧分流不均的根本原因,研究了该型变换器负载大小对输入均压的影响,定量分析了负载大小和输入不均压程度的关系公式;基于这种分析,提出了通过均压电阻强制给定负载的方法实现输入均压,从而实现了该型变换器的控制简化.文章最后通过仿真和样机实验验证了该方法的有效性和正确性,运用该方法的输入串联输出并联全桥变换器输入电压不均压程度控制在输入电 压的2％,满足工程实践要求.