输入——输出迭代算法中松弛因子的确定

本文利用变分的手段提示了输入—输出迭代算法中松弛因子的取值规律。     

一种改进的计算探测器校正因子的相关抽样方法

对于小尺寸探测器处于大块介质的情形, 在探测器的校正因子的Monte Carlo模拟中, 存在两个难题: 一是由于探测器尺寸很小粒子难以到达探测器并发生碰撞; 二是两个随机变量比值难以达到要求精度. 本文使用经过改进的粒子碰撞自动重要抽样方法, 再结合相关抽样方法, 解决了这两个难题, 并在MCNP-4C程序平台上加以实现. 除了粒子碰撞自动重要抽样以外, 还选用了其他3种方法: 直接模拟、区域分裂、强迫碰撞+Dxtran球分别与相关抽样方法结合, 对一个简化的探测器校正因子计算模型进行了计算. 实际计算结果表明, 相关抽样方法无论与哪种方法结合, 都起到了提高相关量计算效率的作用; 而它与粒子碰撞自动重要抽样结合, 比其他方法具有明显的优越性.     

影响有线数字电视机顶盒发展的因素

从用户需求、节目源、价格、资金、行业体制等方面论述了影响有线数字电视机顶盒发展的因素。     

调幅系数为任意值的调幅波研究

本文讨论了调幅系数为任意值的调幅波，给出了它的表达式，频谱与调幅系数，调制效率和信噪比增益的计算公式。     

中学生男性性别角色期望的因子模型与应用

运用中学生男性性别角色期望调查表和因子分析方法对贵阳市中学生进行男性性别角色期望调查和定性与定量分析,为中学生树立适宜的性别角色观,促进其心理健康发展提供量化依据.分析显示:传统的男性角色并不被现代中学生完全接受,无论是男中学生还是女中学生都在力图探求一种新的男性性别角色模式,且两性中学生对这一新的男性性别角色模式的期望和把握是有一定差异的.     

拟因子试验设计在生产中的应用

根据生产实际,综合利用并列、赋闲列和拟水平试验设计,运用多重比较进行方差分析,寻找水泥熟料的最佳工艺.不仅解决了不同水平多因素试验问题,同时还可考虑交互作用,大大减少了试验次数,从而提高经济效益.     

A Characterization of Graphs without Even Factors

In this paper, we first reduce the problem of finding a minimum parity (g,f)-factor of a graph G into the problem of finding a minimum perfect matching in a weighted simple graph G*. Using the structure of G*, a necessary and sufficient condition for the existence of an even factor is derived. This paper was accomplished while the second author was visiting the Center for Combinatorics, Nankai University. The research is supported by NSFC     

Does the beam width affect the generalized M factor of hard-edged diffracted beams?

A detailed study of the generalized M² factor of hard-edged diffracted beams based on the truncated second-order moments method, asymptotic analysis and self-convergent beam width approach is performed. The dependence of the generalized M² factor on the parameters characterizing the spatial profile, and beam truncation, etc. is analyzed.     

On the role of the interface charge in non-ideal metal–semiconductor contacts

The bias dependent interface charge is considered as the origin of the observed non-ideality in current–voltage and capacitance–voltage characteristics. Using the simplified model for the interface electronic structure based on defects interacting with the continuum of interface states, the microscopic origin of empirical parameters describing the bias dependent interface charge function is investigated. The results show that in non-ideal metal–semiconductor contacts the interface charge function depends on the interface disorder parameter, density of defects, barrier pinning parameter and the effective gap center. The theoretical predictions are tested against several sets of published experimental data on bias dependent ideality factor and excess capacitance in various metal–semicoductor systems.