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51.
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Xiao-rui Wang Jian-qi Zhang Zhuo-xiang Feng Fang-ming Hu 《International Journal of Infrared and Millimeter Waves》2004,25(11):1645-1656
The TOD (triangle orientation discrimination threshold) metric, as a promising sensor performance measure, is suitable for all types of thermal imaging systems and corresponds to the field performance very well. Since this method was proposed, a great progress has been made in some aspects, such as experimental validation, field performance, and TOD sensor performance model. However, what is still missing is a TOD curve prediction model similar to MRTD (minimum resolvable temperature difference) equation. Here, an equation-based TOD performance model was first developed focusing on staring thermal imagers. Specifically, spatial distribution of the triangle standard test pattern is described quantitatively. Resolution transfer characteristic of the staring infrared imagers is modeled with linear system theory, and system noise is characterized with the introduction of three-dimensional noise model. The modulation effect of overall subsystem of staring thermal imager on the non-periodic triangle standard pattern is analyzed. The matched filter idea is adopted to characterize quantitatively the spatial integration of the eye to signal and various noise components over the triangle pattern area, and the perceived signal-to-noise ratio of the staring thermal imager is derived. Then, the TOD performance theoretical model is established. Comparing with experimental results, this theoretical model gives reasonable prediction of the TOD performance curve of staring thermal imagers. Although more tests and modifications are required, these preliminary results suggest that this model can be developed into a model that predicts the TOD for all kinds of sensors. 相似文献
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F. F. Sizov V. P. Reva A. G. Golenkov V. V. Vasiliev A. O. Suslyakov 《Opto-Electronics Review》2006,14(1):76-83
Analysis of four types 4×288 designed and manufactured readouts is presented. All the readouts have the direct injection input
circuit with the circuits incorporated that allows testing procedure of readouts without the photodiodes attached to readout
circuits. TDI registers have three delay elements between neighbouring inputs. Some characteristics of 4×288 FPAs with mercury-cadmium-telluride
(MCT) arrays are presented too. Analysis have shown that in spite of different constructions of four readout types, different
numbers of outputs and external service, rather similar parameters of FPAs have been obtained. Detectivity values measured
for all 4×288 FPAs at operation temperature T ≈ 78 K with skimming mode included and background temperature Tb ≈295 K were in the range D*λ ≅ (1.2−1.7)×1011 cmHz1/2/W. 相似文献
57.
Li He Xiangliang Fu Qingzhu Wei Weiqiang Wang Lu Chen Yan Wu Xiaoning Hu Jianrong Yang Qinyao Zhang Ruijun Ding Xiaoshuang Chen Wei Lu 《Journal of Electronic Materials》2008,37(9):1189-1199
Results of first-principles calculations and experiments focusing on molecular beam epitaxy (MBE) growth of HgCdTe on the
alternative substrates of GaAs and Si are described. The As passivation on (2 × 1) reconstructed (211) Si and its effects
on the surface polarity of ZnTe or CdTe were clarified by examining the bonding configurations of As. The quality of HgCdTe
grown on Si was confirmed to be similar to that grown on GaAs. Typical surface defects in HgCdTe and CdTe were classified.
Good results for uniformities of full width at half maximum (FWHM) values of x-ray rocking curves, surface defects, and x values of Hg1−x
Cd
x
Te were obtained by refining the demanding parameters and possible tradeoffs. The sticking coefficient of As4 for MBE HgCdTe was determined. The effects of Hg-assisted annealing for As activation were investigated experimentally and
theoretically by examining the difference of the formation energy of AsHg and AsTe. Results of focal-plane arrays (FPAs) fabricated with HgCdTe grown on Si and on GaAs are discussed. 相似文献
58.
金属硅化物及其在肖特基势垒IRCCD焦平面阵列中的应用 总被引:1,自引:1,他引:0
叙述了金属硅化物的形成、组分、性质和金属硅化物形成过程中的问题。简述了金属硅化物的形成机理、分析技术及其在金属硅化物(Pd_2Si,PtSi 和IrSi)肖特基势垒红外电荷耦合器件焦平面阵列中的应用。 相似文献
59.
本文报道了采用Cl2/N2电感耦合等离子(ICP)组合体刻蚀工艺在InAs/GaSb II类超晶格红外焦平面台面加工过程中的研究结果,实验采用分子束外延技术在GaSb衬底上生长的PIN型超晶格材料。结果表明,气体流量比例直接对刻蚀速率和刻蚀形貌产生影响,氯气含量越高,刻蚀速率越大,当氮气含量增加,刻蚀速率降低并趋于一定值。当氯气和氮气的流量比例和等离子腔体内压力等参数一定时,随着温度升高,刻蚀速率和选择比在有限范围内同时线性增大,台面的倾角趋于直角,台面轮廓层状纹理逐渐消失,但沟道内变得粗糙不平,并出现坑点。在实验研究范围内,电感耦合等离子源的ICP功率和RF功率对刻蚀结果产生的影响较小。 相似文献
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