数字域时间延迟积分时间CMOS相机高分“凝视”成像设计分析

为实现凝视卫星高分跟踪成像,设计了数字域时间延迟积分(TDI)互补金属氧化物半导体(CMOS)传感器在凝视姿态下的成像匹配模型,推导了卫星凝视跟踪成像时相对轨道坐标系的姿态变化,采用坐标变换方法实时计算其在凝视过程中随姿态变化的行转移时间,利用蒙特卡罗方法统计计算了凝视模式下姿态指向精度和稳定度对成像的影响。利用数字域TDI CMOS原理样机和小卫星姿态控制系统全物理仿真平台对成像进行了仿真分析。结果表明,卫星的姿态控制精度在成像过程中会引起纵向的像移速度失配和横向匹配的残余像移,成像积分级数越高,图像信噪比越大。积分级数的增加对卫星姿态提出较高要求,仿真平台姿态角和姿态角速度控制精度分别优于0.05°,0.005°/s时,采用积分级数为48级能较好地满足成像质量要求。     

Status of the MBE technology at leti LIR for the manufacturing of HgCdTe focal plane arrays

This paper presents recent developments that have been made in Leti Infrared Laboratory in the field of molecular beam epitaxy (MBE) growth and fabrication of medium wavelength and long wavelength infrared (MWIR and LWIR) HgCdTe devices. The techniques that lead to growth temperature and flux control are presented. Run to run composition reproducibility is investigated on runs of more than 15 consecutively grown layers. Etch pit density in the low 10⁵ cm⁻² and void density lower than 10³ cm⁻² are obtained routinely on CdZnTe substrates. The samples exhibit low n-type carrier concentration in the 10¹⁴ to 10¹⁵ cm⁻³ range and mobility in excess of 10⁵ cm²/Vs at 77 K for epilayers with 9.5 μm cut-off wavelength. LWIR diodes, fabricated with an-on-p homojunction process present dynamic resistance area products which reach values of 8 10³ Ωcm² for a biased voltage of −50 mV and a cutoff wavelength of 9.5 μm at 77 K. A 320 × 240 plane array with a 30 μm pitch operating at 77 K in the MWIR range has been developed using HgCdTe and CdTe layers MBE grown on a Germanium substrate. Mean NEDT value of 8.8 mK together with an operability of 99.94% is obtained. We fabricated MWIR two-color detectors by the superposition of layers of HgCdTe with different compositions and a mixed MESA and planar technology. These detectors are spatially coherent and can be independently addressed. Current voltage curves of 60 × 60 μm² photodiodes have breakdown voltage exceeding 800 mV for each diode. The cutoff wavelength at 77 K is 3.1 μm for the MWIR-1 and 5 μm for the MWIR-2.     

基于面阵凝视扫描成像的声光光谱成像系统及其图像拼接验证试验

可见---近红外波段(400~1000 nm)成像光谱仪是光谱探测的重要组成部分。基于地基可见-近红外成像光谱仪的实际应用要求,提出了一种采用面阵探测器的凝视扫描成像光谱仪。该光谱仪还采用了一种新型分光器件声光可调谐滤波器(Acousto-optic tunable filter, AOTF)。其特点在于光谱的选择和施加在它上的射频信号频率相关;通过程序控制射频信号,就可以控制光谱。利用设计的光谱成像原理样机进行了地基月球观测实验。基于实验的特点,在光学设计的基础上增加了另一路共轴辅助光学,以进行粗定位。在获取成像结果之后,进行了辐射定标和尺度不变特征变换(Scale Invariant Feature Transformation, SIFT)图像拼接处理。结果表明,利用二维指向机构和面阵凝视成像系统,结合SIFT图像拼接算法,可有效获取宽幅高分辨率光谱图像。     

凝视型红外光电成像系统主要参数的实验室测评分析

综合阐述了凝视型红外光电成像系统实验室主要参数测评,并对最小可分辨温差MRTD、系统调制传递函数MTF和噪声等效温差NETD等参数的测试方法进行了陈述,给出了具体测试实验过程和实验结果,对影响测试结果的因素进行了分析.     

中波红外焦平面凝视电路系统的设计与实现

介绍了针对上海技术物理研究所研制的碲镉汞中波红外焦平面器件而设计的凝视电路系统,功能包括模拟信号的采集、调理、模数转换、数据编排、USB接口等.该系统以计算机为终端,配合光学系统和软件,进行了外场远目标成像试验,并对图像进行了非均匀性校正等处理.     

红外焦平面器件的研制与展望

从焦平面器件研制的角度出发，分析了焦平面技术的现状和发展趋势，认为红外焦平面的难点在于大规模，高均匀性，高性能的红外探测器阵列的制造，同时强调了材料，杜瓦瓶，致冷器，读出电路等关键技术在加速焦平面器件研制中所起的重要作用。     

基于多层薄膜的长波红外InAs/GaSb II类超晶格焦平面光响应调控研究

本文基于长波InAs/GaSb Ⅱ类超晶格红外焦平面阵列(Focal Plane Array,FPA)设计和生长了由ZnS和Ge组成的多层薄膜结构。与没有多层薄膜的FPA相比,多层薄膜使其响应峰位置从8.7μm和10.3μm分别移动到9.8μm和11.7μm,50%响应截止波长从11.6μm移动至12.3μm,并且在波长为12μm处的响应强度增加了69%。总之,优化的多层薄膜可以调控FPA的响应波长,这为实现更高灵敏度和更高成像能力的长波红外探测提供了更好的平台。     

Control and growth of middle wave infrared (MWIR) Hg<Subscript>(1−x)</Subscript>Cd<Subscript>x</Subscript>Te on Si by molecular beam epitaxy

Middle wave infrared (MWIR) HgCdTe p-on-n double-layer heterojunctions (DLHJs) for infrared detector applications have been grown on 100-mm Si (112) substrates by molecular beam epitaxy (MBE) for large format 2,560×512 focal plane arrays (FPAs). In order to meet the performance requirements needed for these FPAs, cutoff and doping uniformity across the 100-mm wafer are crucial. Reflection high-energy electron diffraction (RHEED), secondary ion mass spectrometry (SIMS), Fourier transform infrared spectrometry (FTIR), x-ray, and etch pit density (EPD) were monitored to assess the reproducibility, uniformity, and quality of detector material grown. Material properties demonstrated include x-ray full width half maximum (FWHM) as low as 64 arc-sec, typical etch pit densities in mid-10⁶ cm⁻², cutoff uniformity below 5% across the full wafer, and typical density of macrodefects <1000 cm⁻². The detector quality was established by using test structure arrays (TSAs), which include miniarray diodes with the similar pitch as the detector array for easy measurement of critical parameters such as diode I-V characteristics and detector quantum efficiency. Typical I-V curves show excellent R₀A products and strong reverse breakdown characteristics. Detector quantum efficiency was measured to be in the 60–70% range without an antireflection coating.     

Characterization of the Performance of Micro-Scanning Infrared Imager

According to the working mechanisms of micro-scanning imagery, an application-oriented analytical method of micro-scanning imager is proposed. Firstly, the sensitivity and resolution of infrared imaging system based on the micro-scanning are characterized respectively, and the modification of Minimum Resolvable Temperature Difference (MRTD) model due to the micro-scanning is implemented. A comparison of MRTD curve between the staring and micro-scanning imaging system is performed. Finally, the field performance of micro-scanning based infrared imaging system is predicted and discussed with the target acquisition model. The simulated results show whether micro-scanning improve the infrared imaging system performance depends on the other imaging system parameters, and working conditions.     

红外成像寻的用双色凝视焦平面探测器设计的基本要求

文中讨论了红外成像寻的器用红外焦平面探测器的工作波段、阵列结构、规模、相对孔径等问题,提出双色凝视红外焦平面探测器设计的基本要求: (1)波长组合以相邻波段为宜;(2)双色FPA以叠层结构的凝视型为宜; ( 3)通过限制红外成像传感器的视场,将双色凝视FPA的规模控制在320 ×256以下为宜; (4)在探测元尺寸50μm ×50μm时,中波/长波双色凝视FPA的F数以1～2. 44为宜。