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91.
In view of wide potential use as p-type oxide semiconductor of titanium monoxide (TiO), it is deposited in this work by using high power impulse magnetron sputtering (HIPIMS), which is known to provide less hysteresis effect in reactive sputtering and better control in stoichiometry. A strong correlation among the preparation parameters on the microstructure and optoelectrical characteristics of the obtained Ti-O films are investigated.Experimental results show that the crystallinic cubic γ-TiO can be directly grown on unheated glass substrate. In regard to the effects of substrate bias and post-annealing, the as-grown γ-TiO transfers into rutile (R-TiO2) at a critical substrate bias voltage of −125 V or post-annealing temperature of 500 °C. For the purpose of p-type channel layer in transistor, the optimum γ-TiO film exhibiting a high hole mobility of 8.2 cm2/V s is grown at the substrate bias voltage of −25 V and followed by the post-annealing at 400 °C. 相似文献
92.
A series of impulse-type inputs has been extensively used to evaluate the critical response of an elastoplastic structure subjected to diverse types of pulse-type inputs, including a near-fault ground motion. In this paper, we consider the critical double-impulse input for a single-degree-of-freedom elastic–perfectly plastic structure, and study effects of structural uncertainties. When the natural frequency (or, equivalently, the stiffness) is fixed, the critical response of the structure does not necessarily decrease as the yield deformation (or, equivalently, the yield force) increases. As the first contribution, we give through investigation of this non-monotonicity property. Moreover, we present a systematic method for finding the worst-case scenario when the yield deformation and the stiffness of a structure assumed to be uncertain simultaneously. Numerical examples are presented to illustrate that the robustness of a structure does not necessarily improve when the yield deformation and/or the yield force is increased. 相似文献
93.
介绍了对闪光灯电容器在不同条件下进行老练工艺试验的结果,选择了合适的温度和电压条件,并采用时间间隙老练工艺,取得了满意的结果。 相似文献
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电视拦收机为获得高质量的立体声和双伴音,必须设法降低系统动态噪声和内载波蜂音。本文在分析了现行电视机中产生内载波蜂音的原因之后,介绍了准分离式伴音系统原理和应用单片Zenith-dbx解码集成电路设计的BTSC制式电视多路伴音接收机。 相似文献
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P.?Bhargava M.?Kumar H.?Kumar P.?Pandit R.?Pandey A.?K.?NathEmail author 《Pramana》2004,62(4):923-932
We have studied about the thrust imparted to targets of different materials by pulsed TEA CO2 laser and chopped CW CO2 laser in air and its dependence on different parameters such as laser intensity and pulse duration. We estimated the impulse-coupling
coefficient and compared it with the published results. The mechanism of generation of thrust by laser incident on targets
in air is, in effect, combination of those involved in laser ablation in vacuum and laser-induced air detonation. 相似文献
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100.
Ivan Grech Joseph Micallef Tanya Vladimirova 《Analog Integrated Circuits and Signal Processing》2003,36(1-2):99-117
This paper proposes the design of a novel current-mode front-end for the extraction of localization spectral cues from two audio signals, together with test results. The front-end consists of two parallel filter banks, envelope extraction and comparison circuitry, together with an AGC loop. The extracted cues are intended to be further processed in order to determine the source azimuth and elevation. A current-mode log-domain implementation using subthreshold MOS operation is used for micropower operation while still achieving a good bandwidth and linearity. A current-mode solution is also preferred because of the ease of implementation of certain mathematical operations. The front-end splits the input signals into different frequency bands and computes monaural and interaural spectral cues from the resulting signal envelopes for each band. The front-end has been optimized to operate at a supply voltage of 1.8 V and most blocks have been designed using a differential architecture. To our knowledge, this is the first log-domain implementation of a front-end for 2-D localization cues extraction. The design has been carried out using a standard double-poly double-metal 0.8 m CMOS process with V
T = 0.8 V. The bandpass filters which form the main core of the chip exhibit a measured dynamic range of 62 dB corresponding to 1.9% THD, while the total power dissipation is 890 W. 相似文献