High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga_2O_3 thin film

Si-doped β-Ga_2O_3 films are fabricated through metal-organic chemical vapor deposition(MOCVD). Solar-blind ultraviolet(UV) photodetector(PD) based on the films is fabricated by standard photolithography, and the photodetection properties are investigated. The results show that the photocurrent increases to 11.2 m A under 200 μW·cm-2254 nm illumination and ±20 V bias, leading to photo-responsivity as high as 788 A·W~(-1). The Si-doped β-Ga_2O_3-based PD is promised to perform solar-blind photodetection with high performance.     

Machine Vision Based on an Ultra-Wide Bandgap 2D Semiconductor AsSbO3

Facing the future development trend of miniaturization and intelligence of electronic devices, solar-blind photodetectors based on ultrawide-bandgap 2D semiconductors have the advantages of low dark current, and high signal-to-noise ratio, as well as the features of micro-nanometer miniaturization and multi-functionalization of 2D material devices, which have potential applications in the photoelectric sensor part of high-performance machine vision systems. This study reports a 2D oxide semiconductor, AsSbO₃, with an ultrawide bandgap (4.997 eV for monolayer and 4.4 eV for multilayer) to be used to fabricate highly selective solar-blind UV photodetectors, of which the dark current as low as 100 fA and rejection ratio of UV-C and UV-A reaches 7.6 × 10³. Under 239 nm incident light, the responsivity is 105 mA W⁻¹ and the detectivity is 7.58 × 10¹² Jones. Owing to the remarkable anisotropic crystal structure, AsSbO₃ also shows significant linear dichroism and nonlinear optical properties. Finally, a simple machine vision system is simulated by combining the real-time imaging function in solar-blind UV with a convolutional neural network. This study enriches the material system of ultrawide-bandgap 2D semiconductors and provides insight into the future development of high-performance solar-blind UV optoelectronic devices.     

无线“日盲”紫外光网格网中的定位研究

为了给无线"日盲"紫外光网格网中的接入层和路由层提供更多接入节点的坐标信息,以获得高质量高效率的无线通信效果,采用"三边测量"定位算法在无线"日盲"紫外光网格网中进行节点坐标定位计算,得到了适用于紫外光传输信道下的计算公式,并对此算法进行了仿真。结果表明,当选择合适的收发仰角时,定位误差能够低于0.01km。对于对准精度要求并不苛刻的非视距紫外光通信而言,此算法是可行的。     

背照式AlGaN/GaN基PIN日盲型紫外探测器的研制

利用MOCVD方法在蓝宝石（0001）衬底上生长PIN型AlGaN/GaN外延材料,研制出背照式AlGaN基PIN日盲型紫外探测器,用紫外光谱测试系统和半导体参数测试仪分别测得了器件的光谱响应和I-V特性曲线。测试结果表明,器件的响应范围为260~280 nm,峰值响应出现在270 nm处,在2.5 V偏压下的最大响应...     

Fast-speed self-powered PEDOT: PSS/α-Ga2O3 nanorod array/FTO photodetector with solar-blind UV/visible dual-band photodetection

The $alpha $-Ga$_{2}$O$_{3}$ nanorod array is grown on FTO by hydrothermal and annealing processes. And a self-powered PEDOT:PSS/$alpha $-Ga$_{2}$O$_{3}$ nanorod array/FTO (PGF) photodetector has been demonstrated by spin coating PEDOT:PSS on the $alpha $-Ga$_{2}$O$_{3}$ nanorod array. Successfully, the PGF photodetector shows solar-blind UV/visible dual-band photodetection. Our device possesses comparable solar-blind UV responsivity (0.18 mA/W at 235 nm) and much faster response speed (0.102 s) than most of the reported self-powered $alpha $-Ga$_{2}$O$_{3}$ nanorod array solar-blind UV photodetectors. And it presents the featured and distinguished visible band photoresponse with a response speed of 0.136 s at 540 nm. The response time is also much faster than the other non-self-powered $beta $-Ga$_{2}$O$_{3 }$ DUV/visible dual-band photodetectors due to the fast-speed separation of photogenerated carries by the built-in electric field in the depletion regions of PEDOT:PSS/$alpha $-Ga$_{2}$O$_{3}$ heterojunction. The results herein may prove a promising way to realize fast-speed self-powered $alpha $-Ga$_{2}$O$_{3}$ photodetectors with solar-blind UV/visible dual-band photodetection by simple processes for the applications of multiple-target tracking, imaging, machine vision and communication.     

3D-to-2D Dimensional Reduction for Exploiting a Multilayered Perovskite Ferroelectric toward Polarized-Light Detection in the Solar-Blind Ultraviolet Region

Polarized-light detection in solar-blind ultraviolet region is indispensable for optoelectronic applications, whereas new 2D candidates targeted at solar-blind UV range remain extremely scarce. 2D hybrid perovskite ferroelectrics that combine polarization and semiconducting properties are of increasing interest. Here, using the 3D-to-2D dimensional reduction of CH₃NH₃PbCl₃, we designed a multilayered hybrid perovskite ferroelectric, (CH₃CH₂NH₃)₂(CH₃NH₃)₂Pb₃Cl₁₀, which shows spontaneous polarization and a high Curie temperature (390 K) comparable with that of BaTiO₃ (393 K). The wide band gap (ca. 3.35 eV) and anisotropic absorbance stemming from its intrinsic 2D motif, greatly favor its polarization-sensitive activity in UV region. The device displays excellent polarization-sensitive behavior under 266 nm, along with a large dichroic ratio (ca. 1.38) and high on/off current ratio (ca. 2.3×10³).     

“日盲”紫外光通信系统编译码性能研究

针对“日盲”紫外光通信信道的特殊性,采用当前优异的信道编码技术Turbo码进行编码,仿真分析了Turbo码实现紫外光信息传输的可行性,并分析了Turbo码Max-Log—MAP译码算法对译码性能的影响,为Turbo码在紫外光通信系统中的应用提供了理论基础。     

283 nm背照射p-i-n型AlGaN日盲紫外探测器

实验中使用在蓝宝石衬底上用低压金属有机化学气相沉积（MOCVD）生长的AlGaN基p-i-n结构材料,通过对工艺流程的优化设计,制作了背照射p-i-n型AlGaN日盲紫外探测器,获得了较高的外量子效率。材料中p区和i区的Al组分为40%,n区Al组分为65%。探测器为直径500 m的圆形,光谱响应起止波长为260~310 nm,峰值响应波长283 nm。零偏压下,暗电流密度为2.710-10 Acm-2,对应的R0A参数为3.8108 cm2,峰值响应率为13 mA/W,对应的峰值探测率为1.971012 cmHz1/2W-1。其在-7 V偏压下,峰值响应率达到148 mA/W,对应的外量子效率达到63%。     

矩阵阳极紫外微通道板光电倍增管

重点介绍新近研制成功的ＧＤＢ－６０４微通道板光电倍增管的工作原理、结构特点和特性参数。     

薄膜厚度对射频磁控溅射β-Ga2O3薄膜光电性能的影响

本文在室温下利用射频磁控溅射技术在(001)蓝宝石衬底上制备了不同厚度的β-Ga₂O₃薄膜,随后将其置于氩气气氛中800℃退火1 h.利用XRD,SEM,UV-Vis分光光度计、PL光致发光光谱仪和Keithley 4200-SCS半导体表征系统等考察薄膜厚度对所得氧化镓薄膜相组成、表面形貌、光学性能以及光电探测性能的影响.结果表明,随着薄膜厚度的增加,薄膜结晶质量提高,840 nm薄膜最佳,1050 nm薄膜结晶质量略有降低.不同厚度β-Ga₂O₃薄膜在波长200—300 nm日盲区域内均具有明显的紫外光吸收,禁带宽度随着薄膜厚度的增加而增加.PL谱中各发光峰峰强随着薄膜厚度的增加而减小,表明氧空位及其相关缺陷受到抑制.在β-Ga₂O₃薄膜基础上制备出日盲紫外光电探测器的探测性能(光暗电流比,响应度,探测率,外量子效率)也随薄膜厚度的增加呈先增后减的趋势.厚度约为840 nm的β-Ga₂O₃紫外光电探测器,在5...