A low cost integrated transceiver for mobile UHF passive RFID reader applications

2.5 mm2 including pads.     

侧向局部加热对流的周期性

通过流体力学方程组的数值模拟,研究了侧向局部加热条件下Prandtl数Pr=0.0272时流体对流的周期性.结果表明:随着Grashof数Gr的增加,对流按稳态对流、单局部周期对流、双局部周期对流、准周期对流的顺序发展.当Gr<3.6×103时,对流为稳态;在3.6×103相似文献   

Field Emission and Cathodoluminescence of ZnS Hexagonal Pyramids of Zinc Blende Structured Single Crystals

Single‐crystal hexagonal pyramids of zinc blende ZnS are fabricated by facile thermal evaporation in an ammonia atmosphere at 1150 °C. It is found that ZnS pyramids grow along the [111] crystal axis and possess a sharp tip with a diameter of ～10 nm and a micrometer‐sized base. The structural model and growth mechanism are proposed based on crystallographic characteristics. This unique ZnS pyramid structure exhibits a low turn‐on field (2.81 V µm^?1), a high field‐enhancement factor (over 3000), a large field‐emission current density (20 mA cm^?2), and good stability with very small fluctuation (0.9%). These superior field‐emission properties are clearly attributed to the pyramid morphology, with micrometer‐sized bases and nanotips, and high crystallinity. Moreover, a stable UV emission of 337 nm at room temperature is observed and can be ascribed to the band emission of the zinc blende phase. These results suggest that the ZnS hexagonal pyramids can be expected to find promising applications as field emitters and optoelectronic devices.     

具有学习效应的超前有奖延误受罚的排序问题(英文)

本文考虑具有学习效应和共同交货期的单机排序问题.目标函数是加权超前有奖延误受罚总和.我们的目标是寻找一个最优序使得目标函数的值最小.由于该问题是NP-hard的,我们给出一些特殊情况下多项式时间可解的特例.同时在快速估计下界的基础上给出了分支定界算法来求一般情况下的最有排序.     

Synthesis and characterization of strontium chloroborate whiskers

Single crystalline strontium chloroborate (Sr₂B₅O₉Cl) whiskers with uniform diameter have been synthesized by a facile route based on the calcination of precursor. The precursor was prepared by the sedimentation reaction between SrCl₂ and Na₂B₄O₇ aqueous solution. The products were characterized by X‐ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Fourier transform infrared spectrum (FT‐IR). An optimal synthesis temperature for preparing Sr₂B₅O₉Cl whiskers was obtained, and the possible formation process was also presented.     

Fluorescence Correlation Spectroscopy (FCS): A Promising Tool for Biological Research

Abstract

Fluorescence correlation spectroscopy (FCS) is an important biophysical technique. FCS is currently being used in many areas of biology to solve several scientific problems. Its properties such as detection at the single molecular level, higher sensitivity, and use of lower sample volume make FCS a promising molecular diagnostic tool. The promising applications of FCS extend from DNA kinetics/dynamics studies to the comprehensive understanding of receptor–ligand interactions. In this article, we review various promising biological applications of FCS.     

基于静力悬浮原理的单晶硅球间微量密度差异精密测量方法研究

单晶硅球间微量密度差异测量是阿伏伽德罗常数量子基准定义的重要研究内容, 也是半导体产业中高纯度单晶硅制备工艺质量控制的主要方法. 为了改善现有非接触相移干涉法测量装置复杂和静力称重法测量不确定度低的特点, 根据单晶硅密度精密测量需要, 实现了一种基于静力悬浮原理的单晶硅球密度相对参比测量方法. 通过改变静压力和温度进行三溴丙烷和二溴乙烷混合液体密度的微量调节, 分别使两个待测单晶硅球在液体中悬浮, 根据悬浮状态时的液体温度和悬浮高度计算出待测单晶硅球密度差值. 通过双循环水浴和PID温度控制系统实现±100 μK的恒温液体测量环境. 通过图像识别和迭代拟合算法实现单晶硅球悬浮高度的测量. 使用PID静压力控制系统实现单晶硅球的稳定悬浮控制, 同时减少Joule-Thomson效应引起的液体温度改变. 利用静力悬浮模型中的温度变化和静压力变化线性关系准确测量出标准液体的压缩系数. 试验结果表明, 这种测量方法可以避免液体液面张力的影响, 测量相对标准不确定度达到2.1×10^-7, 能够实现单晶硅球密度差值的精密测量.     

The impact of scaling on single event upset in 6T and 12T SRAMs from 130 to 22 nm CMOS technology

ABSTRACT

As transistor sizes scale down to nanometres dimensions, CMOS circuits become more sensitive to radiation. High-performance static random access memory (SRAM) cells are prone to radiation-induced single event upsets (SEU) which come from the natural space environment. The SEU generates a soft error in the transistor due to the strike of an ionizing particle. Thus, this paper compares the endurance of 12T SRAM and 6T SRAM circuit on 130 up to 22?nm CMOS technology towards SEU. Besides that, this paper discusses the trend of critical linear energy transfer (LET) and collected charge due to technology scaling for the respective circuit. The critical LET (LETcrit) and critical charge (Qcrit) of 6T are approximately 50% lower compared with 12T SRAMs.     

单模光纤斜面连接的回波损耗

本文报道一种高回波损耗单模光纤斜面连接端子。用高斯光束耦合理论分析了其回波损耗特性。实验中测得该端子插入损耗小于０．６ｄＢ，回波损耗大于５３ｄＢ。理论研究指出，单模光纤斜面连接是研制高回波损耗光无源器件的有效方法。