固体激光器的灯泵浦和二极管泵浦方式比较

对固体激光器的灯泵浦和二极管泵浦方式进行了比较,详细分析了不同类型的固体激光器所适用的泵浦方式.指出二极管泵浦固体激光器是今后固体激光器的发展趋势.     

10瓦级双包层光纤激光器

考虑到所用大功率激光二极管的光谱特性，对光纤激光器的基本法布里-珀罗腔型稍加改变，研制出激光二极管抽运的10w级双包层光纤激光器，获得最高功率为11．8w、波长1100mm的单模激光输出。     

用窄带滤光片作为调谐元件的外腔半导体激光器

分析了窄带滤光片的调谐原理，拟合了一块实际滤光片的透射率函数，它是理论的透射率函数和一个洛仑兹函数的乘积。利用１．３μｍ的外腔式调谐激光器实现了１２７２．５ｎｍ至１２９１．７ｎｍ范围内的不连续宽带调谐。     

T(x) phase diagram of the Cu2Se-Al2Se3 system

Twenty alloys of various compositions in the Cu₂Se-Al₂Se₃ system were prepared and investigated. The T(x) phase diagram of the Cu₂Se-Al₂Se₃ system was obtained from x-ray diffraction, differential thermal analysis, and microstructure investigation for the first time. The homogeneity region of the CuAlSe₂ semiconducting compound was established. Previous articles by this author were presented with the spelling of his name as B.V. Korzun.     

自聚焦光纤对半导体激光束的准直研究

介绍了一种新颖的利用自聚焦光纤对半导体激光束的准直技术。该方法结构简单、调整方便。实验研究表明其可使大发散角的半导体激光束压缩到0.01º的数量级,适合作半导体激光器的准直元件而运用于精密测试领域。     

光柱显示技术探讨

本文叙述自动化仪表用光柱显示技术的工作原理及器件结构，重点论述直流等离子体光柱，发光二极管光柱，真空荧光及液晶光柱器件的结构和驱动电路，还展望光柱显示的发展趋势。     

Structural and electrical properties of crystalline (1−x)Ta2O5−xTiO2 thin films fabricated by metalorganic decomposition

Polycrystalline (1−x)Ta₂O₅−xTiO₂ thin films were formed on Si by metalorganic decomposition (MOD) and annealed at various temperatures. As-deposited films were in the amorphous state and were completely transformed to crystalline after annealing above 600 °C. During crystallization, a thin interfacial SiO₂ layer was formed at the (1−x)Ta₂O₅−xTiO₂/Si interface. Thin films with 0.92Ta₂O₅–0.08TiO₂ composition exhibited superior insulating properties. The measured dielectric constant and dissipation factor at 1 MHz were 9 and 0.015, respectively, for films annealed at 900 °C. The interface trap density was 2.5×10¹¹ cm⁻² eV⁻¹, and flatband voltage was −0.38 V. A charge storage density of 22.8 fC/μm² was obtained at an applied electric field of 3 MV/cm. The leakage current density was lower than 4×10⁻⁹ A/cm² up to an applied electric field of 6 MV/cm.     

非晶态硒化镉薄膜瞬态光电特性

本文报道用真空热蒸发法淀积的非晶态硒化镉薄膜作光敏介质制备超快光电导探测器。用对撞脉冲锁模Nd:YAG激光器产生的超短光脉冲序列对探测器的响应时间进行检测,结果表明a-CdSe薄膜对皮秒(10^-12秒)级的超短光脉冲作用具有良好的瞬态响应光电特性,探讨a-CdSe薄膜快速弛豫过程的内在机理。     

电子束装置运行稳定性的测量

 为了验证电子束装置的稳定性,分别对电流波形、电压波形进行了多次测量,对二极管放电时注入腔中电子均匀性进行了探测,最后改变二极管真空度测量了泵浦氩的荧光 谱的稳定性。     

自集成透镜InGaAsP／InPDHLED及其离子束铣技术

本文报道在国内首次采用离子束铣技术研制自集成透镜InGaAsP/InP DH LED的实验结果。采用烘烤正性光致抗蚀剂来形成球状掩膜适合于离子束铣,且重复性很好。为了获得光洁的刻蚀表面,刻蚀条件均已最优化。