Detection system based on a novel large area hybrid detector

A system level implementation of a large area hybrid detector is presented. The detector used in this system consists of an array of hydrogenated amorphous silicon photodiodes directly connected to a CMOS readout chip, which is vertically integrated over the sensor array using flip-chip bonding. In particular, the proposed solution relies on a stack of interconnection layers, deposited on top of the photodiode array, to route each individual pixel output to a separate pre-amplifier channel. This avoids the need for a geometrical matching between the sensor array and the chip contact pads. As a consequence, conventional non-pixelated readout chip can be used and easy-scalable large area detectors can be produced. The CMOS chip is connected to an electronic board, providing the interfaces needed to read the signals as well as providing voltage references and power to the chip. The signals are collected and pre-processed by an FPGA chip, providing a very compact and flexible setup.     

Hybrid Devices by Selective and Conformal Deposition of PtSe2 at Low Temperatures

2D materials display very promising intrinsic material properties, with multiple applications in electronics, photonics, and sensing. In particular layered platinum diselenide has shown high potential due to its layer-dependent tunable bandgap, low-temperature growth, and high environmental stability. Here, the conformal and area selective (AS) low-temperature growth of layered PtSe₂ is presented defining a new paradigm for 2D material integration. The thermally-assisted conversion of platinum which is deposited by AS atomic layer deposition to PtSe₂ is demonstrated on various substrates with a distinct 3D topography. Further the viability of the approach is presented by successful on-chip integration of hybrid semiconductor devices, namely by the manufacture of a highly sensitive ammonia sensors channel with 3D topography and fully integrated infrared-photodetectors on silicon photonics waveguides. The presented methodologies of conformal and AS growth therefore lay the foundation for new design routes for the synthesis of more complex hybrid structures with 2D materials.     

InAs/GaSb Ⅱ类超晶格长波红外探测器的表面处理研究

开展了In As/Ga Sb Ⅱ类超晶格长波红外探测器的表面处理研究。通过对不同处理工艺形成台面器件的暗电流分析,发现N₂O等离子处理结合快速热退火(RTA)的优化工艺能够显著改善长波器件电学性能。对于50%截止波长12.3μm的长波器件,在液氮温度,-0.05 V偏置下,表面处理后暗电流密度从5.88×10^-1 A/cm²降低至4.09×10^-2 A/cm²,零偏下表面电阻率从17.7Ωcm提高至284.4Ωcm,有效降低侧壁漏电流。但是该表面处理后的器件在大反偏压下仍有较大的侧壁漏电,这可能是由于高浓度的表面电荷使得大反偏下侧壁存在较高的隧穿电流。通过栅控结构器件的变栅压实验,验证了长波器件存在纯并联电阻及表面隧穿两种主要漏电机制。最后,对表面处理前后的暗电流进行拟合,处理后器件表面电荷浓度为3.72×10¹¹ cm^-2。     

Millimeter-range Induced Flexo-Pyrophotronic Effect in Centrosymmetric Heterojunction for Ultrafast Night-Photomonitoring

Unlike the structure-specific piezoelectric effect, flexoelectricity is a universal phenomenon that can offer a wide range of energy-efficient, cost-effective, mechano-opto-electro-coupled applications. Even though the flexoelectric effect has been extensively studied at nanoscale, a fundamental, yet unresolved, the issue is how it can be exploited at larger scales for potential applications. Herein, the long-range (>millimeter) stimulated and regulated impact of the localized inhomogeneous strain-induced flexoelectric potential on centrosymmetric metal/titanium oxide heterojunction with nanoscale precision (≈5.8 nm) is demonstrated. The noticed phenomenon is attributed to the long-range interaction between flexoelectric and build-in potentials, which is further utilized to develop mechanically regulated (enhancement > 10⁴%), self-powered (i.e., 0 V), ultrafast (>10 million bits per second), and broadband (λ = 365–1720 nm) pyro-photosensors having high responsivity (≈1.18 mA W⁻¹). As prospective applications, proof-of-concept ultrafast night movement monitors (>720 km h⁻¹), high-performing stationery, and dynamic obstacle sensors with possible impact alerts are developed. These findings lay the groundwork for the micro-to-millimeter-range flexo-opto-electrical coupling in centrosymmetric materials, which can have a wide variety of practical applications.     

Thermal-Triggered “On–Off” Switchable Triboelectric Nanogenerator Based on Two-Way Shape Memory Polymer

Developing multifunctional triboelectric nanogenerators (TENGs) with special intelligence is of great significance for next-generation self-powered electronic devices. However, the relevant work on the intelligent TENGs, especially those spontaneously responsive to external stimuli, is rarely reported. Herein, an intelligent TENG with thermal-triggered switchable functionality and high triboelectric outputs is developed by designing a movable triboelectric layer, which is driven by a two-way shape memory polyurethane. The resultant TENG device can be spontaneously switched on/off in response to the environmental temperature change, i.e., switching on at 0 °C and off at 60 °C. At the “on” state, the developed TENG exhibits excellent triboelectric performance with a maximum output power density of 5.15 W m⁻² at a pressure of 30 kPa due to the unique advantages of micro-/nanofiber triboelectric surfaces. Furthermore, the great potential of the switchable TENG in intelligent wearable electronic applications is demonstrated, which can serve as not only the sensing element for monitoring human movement and physical condition in a cold environment but also the thermal-driven switch for turning on/off the heating function on demand. The intelligent “on–off” switchable TENG combined with excellent triboelectric performance may provide new opportunities for future self-powered wearable electronics.     

Bidirectional and Dual-Mode Organic Photodetector Enables Secure Ultraviolet Communication

Traditional optical communication mode with single-band photodetector depicts terrible confidentiality and it depends on sophisticated cryptography schemes to obtain a secure communication process. Dual-band photodetectors have potential to realize a secure optical communication with a straightforward optical encryption strategy. However, previous reports of dual-band organic photodetectors (OPD) relied on the multi-stacked photosensitive layers thus there remain challenges in spectral matching and interfaces contacting. Here, a structurally simple bidirectional and UV–vis dual-band OPD is proposed, with single photosensitive layer sitting between electrodes. By elaborately regulating the optical field distribution and vertical phase segregation of the bulk heterojunction (BHJ), this OPD presents completely distinct spectral response ranges under bidirectional illuminations. Finally, this OPD outputs outstanding self-powered UV and vis dual-band responsivities (up to 30 and 50 mA W⁻¹) as the light illuminates from forward and backward direction, respectively. In addition, a stable and reliable optical communication system is realized based on this OPD where the UV response conveys valid information and further superimposes vis response for encryption. This design concept offers a simple alternative for achieving varied response windows and opens up a novel optical encryption method, which has potential be applied in a close-range private communication process.     

Frequency Selectivity via Inner Boundary Conditions for A Self-Powered Multiresonant Acoustic Sensing Array with Broad Bandwidth

This study investigates and proposes innovative approaches to achieve frequency selectivity within a limited space. Traditional multiresonant acoustic devices use individual sensing elements of varying sizes to achieve resonance frequency (f_r), leading to an inability to sense focused acoustic waves, unlike the human ear. A miniaturized, self-powered artificial basilar membrane that incorporates multiresonant features is introduced. Multiple f_r of the diaphragms are developed using inner boundary conditions (iBCs) defined by an adjustable micropatterned elastomeric support (µ-support) and a porous nanofiber (NF) mat. This new approach offers the advantage of all-in-one fabrication, eliminating the need for device area variation or an additional rigid frame typically required in conventional multiresonant acoustic devices. The efficacy of the iBCs in shifting f_r within the vocal frequency ranges is verified via a laser Doppler vibrometer, simulation, and triboelectric output. With its self-powering capabilities based on triboelectric principles, this artificial basilar membrane holds promise for accurately recognizing musical and vocal signals with specific frequency characteristics. With four different iBCs in a total device area of 23 × 23 mm², a tunable four-channel system with f_r ranging from 400 to 3000 Hz is achieved. This advancement enables the sensing of focused acoustic waves, simulating the functionality of an artificial human ear model.     

Bandgap Engineering of BiIns Nanowire for Wide-Spectrum,High-Responsivity,and Polarimetric-Sensitive Detection

Optical devices based on alloying semiconductors offer a plethora of new possibilities for detection across a broad spectrum. Among these devices, nanowire-based devices have gained much attention due to their remarkable specific surface area properties in terms of material synthesis, device structure, and performance. In this work, (Bi_xIn_1−x)₂S₃ nanowires are designed by controlling the ratio of Bi and In atoms. The atomic ratio directly affects the electronic band structure of the crystal, thereby further optimizing the performance of optoelectronic devices. According to the experimental results, Bi_1.28In_0.72S₃ nanowire-based photodetectors obtain the most excellent photoresponse performance. The typical device demonstrates a spectral response from deep ultraviolet (DUV 254 nm) to near-infrared (NIR 1064 nm) and achieves a maximum dichroic ratio of photoresponse of 1.5 under polarization-angle-sensitive detection in the 266–808 nm range. It also exhibits a photoresponse of 10.1 A W⁻¹ and a photodetectivity of 5.7 × 10¹⁰ Jones under 532 nm light irradiation. Additionally, the photodetector displays a fast response speed with a rise/fall time of 5/4.7 ms. Finally, “CSU” and puppy images produced by this device further demonstrate the effectiveness of alloying semiconductors in creating wide-spectrum, high-responsivity, fast-response, and polarimetric-sensitive photodetectors.