Ultrahigh Stability 3D TI Bi2Se3/MoO3 Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Infrared (IR) detection at 1300–1650 nm (optical communication waveband) is of great significance due to its wide range of applications in commerce and military. Three dimensional (3D) topological insulator (TI) Bi₂Se₃ is considered a promising candidate toward high‐performance IR applications. Nevertheless, the IR devices based on Bi₂Se₃ thin films are rarely reported. Here, a 3D TI Bi₂Se₃/MoO₃ thin film heterojunction photodetector is shown that possesses ultrahigh responsivity (R_i), external quantum efficiency (EQE), and detectivity (D*) in the broadband spectrum (405–1550 nm). The highest on–off ratio of the optimized device can reach up to 5.32 × 10⁴. R_i, D*, and the EQE can reach 1.6 × 10⁴ A W^?1, 5.79 × 10¹¹ cm² Hz^1/2 W^?1, and 4.9 × 10⁴% (@ 405 nm), respectively. Surprisingly, the R_i can achieve 2.61 × 10³ A W^?1 at an optical communication wavelength (@ 1310 nm) with a fast response time (63 µs), which is two orders of magnitude faster than that of other TIs‐based devices. In addition, the device demonstrates brilliant long‐term (>100 days) environmental stability under environmental conditions without any protective measures. Excellent device photoelectric properties illustrate that the 3D TI/inorganic heterojunction is an appropriate way for manufacturing high‐performance photodetectors in the optical communication, military, and imaging fields.     

Recent Advances in 2D MXenes for Photodetection

A new class of 2D transition metal carbides, carbonitrides and nitrides, termed MXenes, has emerged as a new candidate for many applications in electronics, optoelectronics, and energy storage. Since their first discovery in 2011, MXenes have gathered increasingly more interest owing to their unique physical, chemical, and mechanical properties that can be tuned by different surface terminations and transition metals. In particular, the intriguing optical and electrical properties, including transparency, saturable absorption, and high conductivity, grant MXenes various roles in photodetectors, such as transparent electrodes, Schottky contacts, photoabsorbers, and plasmonic materials. Given the solution‐processability, MXenes also hold great potential for large‐scale synthesis, and thus are favored for a number of electronic and photonic device applications. In this review, recent advances in photodetectors based on 2D MXenes are summarized. Despite the fact that such applications have only recently been explored compared with other 2D materials, MXenes have shown promise in low‐cost and high‐performance photodetection.     

Facet‐Dependent,Fast Response,and Broadband Photodetector Based on Highly Stable All‐Inorganic CsCu2I3 Single Crystal with 1D Electronic Structure

Low‐dimensional metal halides at molecular level, which feature strong quantum confinement effects from intrinsic structure, are emerging as ideal candidates in optoelectronic fields. However, developing stable and nontoxic metal halides still remains a great challenge. Herein, for the first time, high‐crystalline and highly stable CsCu₂I₃ single crystal, which is acquired by a low‐cost antisolvent vapor assisted method, is successfully developed to construct high‐speed (t_rise/t_decay = 0.19 ms/14.7 ms) and UV‐to‐visible broadband (300–700 nm) photodetector, outperforming most reported photodetectors based on individual all‐inorganic lead‐free metal halides. Intriguingly, facet‐dependent photoresponse is observed for CsCu₂I₃ single crystal, whose morphology consists of {010}, {110}, and {021} crystal planes. The on–off ratio of {010} crystal plane is higher than that of {110} crystal plane, mainly owing to lower dark current. Furthermore, photogenerated electrons are localized in twofold chains created by [CuI₄] tetrahedra, leading to relatively small effective mass and fast transport mobility along the 1D transport pathway. Anisotropic carrier transport characteristic is related to stronger confinement and higher electron density for {110} crystal planes. This work not only demonstrates the great potential of CsCu₂I₃ single crystal in high‐performance optoelectronics, but also gives insights into 1D electronic structure associated with fast photoresponse and high anisotropy.     

Flexible Filter‐Free Narrowband Photodetector with High Gain and Customized Responsive Spectrum

Conventional narrowband photodetection is enabled by coupling broadband photodetectors with complex optical filters. The recently reported charge collection narrowing, an alternative filter‐free strategy, attains very narrowband photodetection at the sacrifice of sensitivity. Herein, a new strategy is proposed to customize the responsive spectrum with high gain by using dye molecules with intrinsically versatile and narrowband absorption. The device configuration is organic dye/Zn_0.9Mg_0.1O nanoparticles/graphene, where the organic dye serves as the narrowband absorber, graphene serves as the fast carrier transport channel, and Zn_0.9Mg_0.1O nanoparticles play a triple role of enhancing dye loading, suppressing dye aggregation and blocking charge back recombination. A high responsivity of 8 × 10³ A W^?1 is thus obtained at a 530 nm response peak with a 60 nm full‐width at half maximum, a four orders of magnitude increase in sensitivity compared to the best narrowband photodetectors reported to date under the comparable electric field. Organic dyes with dual‐band absorption to demonstrate narrowband photodetectors with customized responsive spectrum are further implemented. The approach opens the way to the realization of efficient flexible narrowband photodetection for electronic skin and wearable electronic applications.     

Highly Desirable Photodetectors Derived from Versatile Plasmonic Nanostructures

With unique ability to concentrate and manipulate light at nanoscale, surface plasmon resonance technologies create additional opportunities for fabricating superintegration photodetectors with desirable functionalities. To gain an insight into the state‐of‐the‐art of plasmonic photodetectors, recent advances in novel devices as well as potential building blocks are presented herein. The article focuses particularly on understanding the enhancement mechanism of different architectures such as nanoparticles, gratings, waveguides, antennas, and microcavities. Meanwhile, challenges and potential design schemes are proposed in this inspiring field.     

High Mobility WS2 Transistors Realized by Multilayer Graphene Electrodes and Application to High Responsivity Flexible Photodetectors

The electrical contact is one of the main issues preventing semiconducting 2D materials to fulfill their potential in electronic and optoelectronic devices. To overcome this problem, a new approach is developed here that uses chemical vapor deposition grown multilayer graphene (MLG) sheets as flexible electrodes for WS₂ field‐effect transistors. The gate‐tunable Fermi level, van der Waals interaction with the WS₂, and the high electrical conductivity of MLG significantly improve the overall performance of the devices. The carrier mobility of single‐layer WS₂ increases about a tenfold (50 cm² V^?1 s^?1 at room temperature) by replacing conventional Ti/Au metal electrodes (5 cm² V^?1 s^?1) with the MLG electrodes. Further, by replacing the conventional SiO₂ substrate with a thin (1 µm) parylene‐C flexible film as insulator, flexible WS₂ photodetectors that are able to sustain multiple bending stress tests without significant performance degradation are realized. The flexible photodetectors exhibited extraordinarily high gate‐tunable photoresponsivities, reaching values of 4500 A W^?1, and with very short (<2 ms) response time. The work of the heterostacked structure combining WS₂, graphene, and the very thin polymer film will find applications in various flexible electronics, such as wearable high‐performance optoelectronics devices.     

High‐Performance Photodetectors Based on Organometal Halide Perovskite Nanonets

The booming development of organometal halide perovskites has prompted the exploration of morphology‐engineering strategies to improve their performance in optoelectronic applications. However, the preparation of optoelectronic devices of perovskites with complex architectures and desirable properties is still highly challenging. Herein, novel CH₃NH₃PbI₃ nanonets and nanobowl arrays are fabricated facilely by using monolayer colloidal crystal (MCC) templates on different substrates. Specifically, highly ordered CH₃NH₃PbI₃ nanonets with high crystallinity are fabricated on a variety of flat substrates, whereas regular CH₃NH₃PbI₃ nanobowl arrays are produced on a coarse substrate. The photodetection performance of the CH₃NH₃PbI₃ nanonet‐based photodetectors is significantly enhanced compared to the photodetectors based on conventional CH₃NH₃PbI₃ compact films. Particularly, the nanonet photodetectors exhibit a high responsivity (10.33 A W^?1 under 700 nm monochromatic light), which is six times higher than that for the compact CH₃NH₃PbI₃ film devices, fast response speed, and good stability. Owing to the two‐dimensional arrayed structure, the CH₃NH₃PbI₃ nanonets exhibit an enhanced light harvesting ability and offer direct carrier transport pathways. Meanwhile, the MCC template brings about larger grain sizes with enhanced crystallinity. Furthermore, the perovskite nanonets can be formed on a flexible polyethylene terephthalate substrate for the fabrication of promising flexible nanonet photodetectors.     

CH3NH3PbI3/C60 heterojunction photodetectors with low dark current and high detectivity

CH₃NH₃PbI₃/C₆₀ heterojunction photodetectors were here fabricated. The peak EQE achieves ∼80% in the visible-light range from 400 to 760 nm. Benefitting from eliminating the leakage current (PEDOT:PSS-free), extremely low dark current density (0.6 nA/cm²) and high specific detectivity (2.7 × 10¹³ Jones) are acquired.     

量子点合成及其光电功能薄膜研究进展

量子点(quantum dots,QDs),也被称为半导体纳米晶体,得益于其廉价的制造成本和独特的光学物理学特性,已经广泛应用于光电探测器和太阳能电池的设计和开发.而量子点的合成则是制备光电探测器和太阳能电池的重要组成部分之一.本文对几种不同的量子点合成技术进行了概述,对国内外不同的基于量子点的光电探测器和太阳能电池进...