Quasi-Ordered Nanoforests with Hybrid Plasmon Resonances for Broadband Absorption and Photodetection

With the continuing development of green energy technology, solar energy is the most widely distributed and easily utilized form of energy in nature. High-absorption absorbers over a wide spectrum range are beneficial for solar energy harvest. Herein, a fast and efficient method is developed to fabricate a broadband absorber consisting of quasi-ordered nanoforests and metal nanoparticles using a simple plasma bombardment process on a 4-inch silicon wafer, offering high throughputs that can meet practical application demands. The absorber exhibits high absorption exceeding 90% from 300 to 2500 nm, good absorption stability with negligible disturbance from the polarization and the incident angle of light. This effective absorption behavior can be ascribed to multilevel hybridization of the plasmon resonances in the hybrid structures and cavity mode resonances inside the nanoforests. Furthermore, the absorber is integrated onto a thermopile for photodetection with largely enhanced photoresponse from 532 to 2200 nm. The photoinduced voltage of the devices shows a large increment of 433% at 100 mW cm⁻² light power density, in comparison with a contrast pristine thermopile. It is expected that such a broadband absorber holds great potential for multiple applications, including solar steam generation, photodetection, and solar cells.     

Van der Waals Integration Based on Two-Dimensional Materials for High-Performance Infrared Photodetectors

Infrared photodetectors have been widely applied in various fields, including thermal imaging, biomedical imaging, and communication. Van der Waals (vdW) integration based on 2D materials provides a new solution for high-performance infrared photodetectors due to the versatile device configurations and excellent photoelectric properties. In recent years, great progress has been made in infrared photodetectors based on vdW integration. In this review, recent progress in vdW integration-based infrared photodetectors is presented. First, the working mechanisms and advantages of photodetectors with different structures and band alignments are presented. Then, the recent progress of vdW integration-based infrared photodetectors is reviewed, focusing on 2D/nD (n  =  0, 1, 2, 3) vdW integration, and the band engineering as well as the performance of the photodetectors are discussed in detail. Finally, a summary is delivered, and the challenges and future directions of vdW integration-based infrared photodetectors are provided.     

Achieving 256 × 256-Pixel Color Images by Perovskite-Based Photodetectors Coupled with Algorithms

Perovskites have been found with their exceptional optoelectronic properties that may bring new options to high-performance cameras. However, the best images obtained by perovskite-based photodetectors (PDs) have only 32 × 32 pixels, far below megapixels of camera images. In this study, a perovskite single-PD color imaging prototype coupled with computation algorithms is fabricated, by which images with 256 × 256 pixels, whose quality has prevailed over those obtained by any perovskite-based device so far are obtained. The technology shows its unique advantages by obtaining satisfying photographs, even when the PD is covered with frosted glass/moving smoke or facing a wall instead of the target, in addition to possessing some ability to resist ambient light interference. Moreover, a new Q factor is proposed to evaluate new-material-based PD for the imaging technology and prove its usability by comparing an atomic-layer-deposition (ALD)-Al₂O₃ optimized CsBi₃I₁₀ PD and an unoptimized CsBi₃I₁₀ PD. Finally, the material choices are successfully extended to other types of perovskites, including photovoltaic MAPbI₃ PD (structure: Spiro-OMeTAD/MAPbI₃/SnO₂/FTO), ALD-Al₂O₃ MAPbI₃ PD, and ALD-Al₂O₃ CsPbBr₃ PD. The technology may bring an innovative approach to improve the performance of cameras and extend the application range of advanced functional materials.     

Strong Interlayer Transition in Few-Layer InSe/PdSe2 van der Waals Heterostructure for Near-Infrared Photodetection

Near infrared (NIR) photodetectors based on 2D materials are widely studied for their potential application in next generation sensing, thermal imaging, and optical communication. Construction of van der Waals (vdWs) heterostructure provides a tremendous degree of freedom to combine and extend the features of 2D materials, opening up new functionalities on photonic and optoelectronic devices. Herein, a type-II InSe/PdSe₂ vdWs heterostructure with strong interlayer transition for NIR photodetection is demonstrated. Strong interlayer transition between InSe and PdSe₂ is predicted via density functional theory calculation and confirmed by photoluminance spectroscopy and Kelvin probe force microscopy. The heterostructure exhibits highly sensitive photodetection in NIR region up to 1650 nm. The photoresponsivity, detectivity, and external quantum efficiency at this wavelength respectively reaches up to 58.8 A W⁻¹, 1 × 10¹⁰ Jones, and 4660%. The results suggest that the construction of vdWs heterostructure with strong interlayer transition is a promising strategy for infrared photodetection, and this work paves the way to developing high-performance optoelectronic devices based on 2D vdWs heterostructures.     

Wearable Self-Powered Electrochemical Devices for Continuous Health Management

The wearable revolution is already present in society through numerous gadgets. However, the contest remains in fully deployable wearable (bio)chemical sensing. Its use is constrained by the energy consumption which is provided by miniaturized batteries, limiting the autonomy of the device. Hence, the combination of materials and engineering efforts to develop sustainable energy management is paramount in the next generation of wearable self-powered electrochemical devices (WeSPEDs). In this direction, this review highlights for the first time the incorporation of innovative energy harvesting technologies with top-notch wearable self-powered sensors and low-powered electrochemical sensors toward battery-free and self-sustainable devices for health and wellbeing management. First, current elements such as wearable designs, electrochemical sensors, energy harvesters and storage, and user interfaces that conform WeSPEDs are depicted. Importantly, the bottlenecks in the development of WeSPEDs from an analytical perspective, product side, and power needs are carefully addressed. Subsequently, energy harvesting opportunities to power wearable electrochemical sensors are discussed. Finally, key findings that will enable the next generation of wearable devices are proposed. Overall, this review aims to bring new strategies for an energy-balanced deployment of WeSPEDs for successful monitoring of (bio)chemical parameters of the body toward personalized, predictive, and importantly, preventive healthcare.     

Self-Powered Organic Photodetectors with High Detectivity for Near Infrared Light Detection Enabled by Dark Current Reduction

Organic photodetectors (OPDs) for near infrared (NIR) light detection represents cutting-edge technology for optical communication, environmental monitoring, biomedical imaging, and sensing. Herein, a series of self-powered OPDs with high detectivity are constructed by the sequential deposition (SD) method. The dark currents (J_d) of SD devices are effectively reduced in comparison to blend casting (BC) ones due to the vertical phase segregation structure. Impressively, the J_d values of SD devices based on D18 and Y6 system is reduced to be 2.1 × 10⁻¹¹ A cm⁻² at 0 V, which is two orders of magnitude lower than those of the BC devices. The D* value of the SD device is superior to that of BC device under different bias voltages (0, −0.5, −1.0, and −2.0 V) due to the reduction of dark current, which originates from the fine vertical phase separation structure of the SD device. The mechanism studies shows that the vertical phase segregation structure can effectively suppress the unfavorable charge injection, thus reducing the dark current. Also, the surface energy is proven to play a key role in the photocurrent stability. In addition, the flexible OPDs demonstrate excellent performance in photoplethysmography test.     

Ultrahigh Stability 3D TI Bi2Se3/MoO3 Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Infrared (IR) detection at 1300–1650 nm (optical communication waveband) is of great significance due to its wide range of applications in commerce and military. Three dimensional (3D) topological insulator (TI) Bi₂Se₃ is considered a promising candidate toward high‐performance IR applications. Nevertheless, the IR devices based on Bi₂Se₃ thin films are rarely reported. Here, a 3D TI Bi₂Se₃/MoO₃ thin film heterojunction photodetector is shown that possesses ultrahigh responsivity (R_i), external quantum efficiency (EQE), and detectivity (D*) in the broadband spectrum (405–1550 nm). The highest on–off ratio of the optimized device can reach up to 5.32 × 10⁴. R_i, D*, and the EQE can reach 1.6 × 10⁴ A W^?1, 5.79 × 10¹¹ cm² Hz^1/2 W^?1, and 4.9 × 10⁴% (@ 405 nm), respectively. Surprisingly, the R_i can achieve 2.61 × 10³ A W^?1 at an optical communication wavelength (@ 1310 nm) with a fast response time (63 µs), which is two orders of magnitude faster than that of other TIs‐based devices. In addition, the device demonstrates brilliant long‐term (>100 days) environmental stability under environmental conditions without any protective measures. Excellent device photoelectric properties illustrate that the 3D TI/inorganic heterojunction is an appropriate way for manufacturing high‐performance photodetectors in the optical communication, military, and imaging fields.     

Structural Design and Pyroelectric Property of SnS/CdS Heterojunctions Contrived for Low‐Temperature Visible Photodetectors

The traditional photodetectors based on photoelectric effect exhibit inferior response or even out of operation with the decrease of temperature. However, cryogenic visible light detection is increasingly demanded in deep space and polar exploration. Herein, a self‐powered visible photodetector coupling pyroelectricity and photoelectricity to optimize the cryogenic detecting performance is designed in which hydrothermally grown CdS nanorod array is covered by SnS nanoflakes. The choice of SnS allows the detector with strong visible light absorption and great photoelectric conversion efficiency, while the CdS nanorod structure with pyroelectricity can effectively modulate the behavior of photogenerated carriers at low temperatures. It is found that the response characteristics of the photodetector are dominated by the combination of pyroelectric and photoelectric effects, which becomes more significant with the reduced temperature. Specifically, at 130 K temperature, the photoresponse current under 650 nm light is improved by 7.5 times as that at room temperature, while the ratio of pyroelectric current to photocurrent can be increased to 400%. Meanwhile, the responsivity and detectivity are as high as 10.4 mA W^?1 and 3.56 × 10¹¹ Jones, respectively. This work provides a promising approach to develop high‐performance self‐powered visible photodetectors with low‐temperature operating capability.     

Recent Advances in 2D MXenes for Photodetection

A new class of 2D transition metal carbides, carbonitrides and nitrides, termed MXenes, has emerged as a new candidate for many applications in electronics, optoelectronics, and energy storage. Since their first discovery in 2011, MXenes have gathered increasingly more interest owing to their unique physical, chemical, and mechanical properties that can be tuned by different surface terminations and transition metals. In particular, the intriguing optical and electrical properties, including transparency, saturable absorption, and high conductivity, grant MXenes various roles in photodetectors, such as transparent electrodes, Schottky contacts, photoabsorbers, and plasmonic materials. Given the solution‐processability, MXenes also hold great potential for large‐scale synthesis, and thus are favored for a number of electronic and photonic device applications. In this review, recent advances in photodetectors based on 2D MXenes are summarized. Despite the fact that such applications have only recently been explored compared with other 2D materials, MXenes have shown promise in low‐cost and high‐performance photodetection.     

Facet‐Dependent,Fast Response,and Broadband Photodetector Based on Highly Stable All‐Inorganic CsCu2I3 Single Crystal with 1D Electronic Structure

Low‐dimensional metal halides at molecular level, which feature strong quantum confinement effects from intrinsic structure, are emerging as ideal candidates in optoelectronic fields. However, developing stable and nontoxic metal halides still remains a great challenge. Herein, for the first time, high‐crystalline and highly stable CsCu₂I₃ single crystal, which is acquired by a low‐cost antisolvent vapor assisted method, is successfully developed to construct high‐speed (t_rise/t_decay = 0.19 ms/14.7 ms) and UV‐to‐visible broadband (300–700 nm) photodetector, outperforming most reported photodetectors based on individual all‐inorganic lead‐free metal halides. Intriguingly, facet‐dependent photoresponse is observed for CsCu₂I₃ single crystal, whose morphology consists of {010}, {110}, and {021} crystal planes. The on–off ratio of {010} crystal plane is higher than that of {110} crystal plane, mainly owing to lower dark current. Furthermore, photogenerated electrons are localized in twofold chains created by [CuI₄] tetrahedra, leading to relatively small effective mass and fast transport mobility along the 1D transport pathway. Anisotropic carrier transport characteristic is related to stronger confinement and higher electron density for {110} crystal planes. This work not only demonstrates the great potential of CsCu₂I₃ single crystal in high‐performance optoelectronics, but also gives insights into 1D electronic structure associated with fast photoresponse and high anisotropy.