Flexible and Self‐Powered Lateral Photodetector Based on Inorganic Perovskite CsPbI3–CsPbBr3 Heterojunction Nanowire Array

Self‐powered perovskite photodetectors mainly adopt the vertical heterojunction structure composed of active layer, electron–hole transfer layers, and electrodes, which results in the loss of incident light and interfacial accumulation of defects. To address these issues, a self‐powered lateral photodetector based on CsPbI₃–CsPbBr₃ heterojunction nanowire arrays is designed on both a rigid glass and a flexible polyethylene naphthalate substrate using an in situ conversion and mask‐assisted electrode fabrication method. Through adding the polyvinyl pyrrolidone and optimizing the concentration of precursors under the pressure‐assisted moulding process, both the crystallinity and stability of perovskite nanowire array are improved. The nanowire array–based lateral device shows a high responsivity of 125 mA W^?1 and a fast rise and decay time of 0.7 and 0.8 ms under a self‐powered operation condition. This work provides a new strategy to fabricate perovskite heterojunction nanoarrays towards self‐powered photodetection.     

Synthesis and characterization of a wide bandgap polymer based on a weak donor-weak acceptor structure for dual applications in organic solar cells and organic photodetectors

We synthesized a novel wide bandgap polymer, PDTFBT, forming a weak donor (WD)-weak acceptor (WA) structure for use in organic photodetectors (OPDs) and organic solar cells (OSCs). The fluorination in the D unit and the alkoxy substitution in the A unit induced WD and WA properties, respectively. The WD-WA structure of PDTFBT effectively broadened the bandgap compared to typical D-A structures, and the S-F and S-O dipole-dipole interactions induces a highly planar backbone structure with excellent π-π stacking in the vertical direction. In OPDs, conformationally less disordered PDTFBT polymer retained the constant responsivity and significantly improved the detectivity of PDTFBT:PC₇₁BM devices even with a thick active layer of 470 nm, contrary to the variation in the responsivity of P3HT:PC₆₁BM devices depending on the thickness. In OSCs, the deep HOMO energy level (−5.57 eV) of PDTFBT led to high Voc of 0.92 V in PDTFBT:PC₇₁BM devices, which was 0.3 eV higher than that of P3HT:PC₆₁BM devices (0.62 V), resulting in 1.8-fold enhanced power conversion efficiency. We demonstrated that the WD-WA structure with S-F and S-O interactions is highly promising strategy to make wide bandgap polymers for organic photodetectors and for the bottom cell of tandem architecture.     

Boosted Photocurrent via Heating BiFeo3 Thin Film for UV Photodetector at Wide Temperature Range

The current research on ferroelectric photovoltaic materials is concentrated on enhancing the output photocurrent. As solar cells operate at high temperatures, it is crucial to take into account the effect of increasing temperatures on ferroelectric photovoltaics. In this study, an LNO (lanthanum nickelate, LaNiO₃)/BFO (bismuth ferrate, BiFeO₃)/ITO (indium tin oxide) device is constructed on a mica substrate by sol–gel method. The device achieves output photocurrent enhancement at a wide temperature range (33–183 °C), with the largest photocurrent enhancement at 130 °C, which is 178% relative to room temperature, and the output power is also increased by 9.88 times. At the same time, compared with BFO bulk, it is found that the performance of BFO film is always higher than that of bulk in the test temperature range, and the output photocurrent of BFO film at room temperature is 104 times higher than that of bulk. This article investigates the effect of high temperatures on ferroelectric photovoltaics and also provides a strategy for enhancing the photovoltaic performance of ferroelectric films, providing guidance for future applications of ferroelectric films in flexible solar cells and other applications.     

Lateral WSe2 Homojunction through Metal Contact Doping: Excellent Self-powered Photovoltaic Photodetector

Here an IR-heating chemical vapor deposition (CVD) approach enabling fast 2D-growth of WSe₂ thin films is reported, and the great potential of metal contact doping in building CVD-grown WSe₂-based lateral homojunction is demonstrated by contacting with TiN/Ni metals in favor of holes/electrons injection. Shortening nanosheet channel to ≈2 µm leads to pronounced enhancement in the performance of diode. The fabricated WSe₂-based diode exhibits high rectification ratios without the need of gate modulation and can work efficiently as photovoltaic cell, with maximum open circuit voltage reaching up to 620 mV and a high power conversion efficiency over 15%, empowering it as superb self-powered photodetector for visible to near-infrared lights, with photoresponsivity over 0.5 A W⁻¹ and a fast photoresponse speed of 10 µs under 520 nm illumination. It is of practical significance to achieve well-performed photovoltaic devices with CVD-grown WSe₂ using fab-friendly metals and simple processing, which will help pave the way toward future mass production of optoelectronic chips.     

Optoelectronic Synapses and Photodetectors Based on Organic Semiconductor/Halide Perovskite Heterojunctions: Materials,Devices, and Applications

Both photodetectors (PDs) and optoelectronic synaptic devices (OSDs) are optoelectronic devices converting light signals into electrical responses. Optoelectronic devices based on organic semiconductors and halide perovskites have aroused tremendous research interest owing to their exceptional optical/electrical characteristics and low-cost processability. The heterojunction formed between organic semiconductors and halide perovskites can modify the exciton dissociation/recombination efficiency and modulate the charge-trapping effect. Consequently, organic semiconductor/halide perovskite heterojunctions can endow PDs and OSDs with high photo responsivity and the ability to simulate synaptic functions respectively, making them appropriate for the development of energy-efficient artificial visual systems with sensory and recognition functions. This article summarizes the recent advances in this research field. The physical/chemical properties and preparation methods of organic semiconductor/halide perovskite heterojunctions are briefly introduced. Then the development of PDs and OSDs based on organic semiconductor/halide perovskite heterojunctions, as well as their innovative applications, are systematically presented. Finally, some prospective challenges and probable strategies for the future development of optoelectronic devices based on organic semiconductor/halide perovskite heterojunctions are discussed.     

压电陶瓷发电装置的能效优化系统设计

针对压电发电装置发电效率不高的问题,设计了一种基于单片机的压电陶瓷发电装置的能效优化系统,该系统可调节悬臂梁长度来改变装置的固有频率,让系统自动适应外界振动信号变化,实现装置的能效最大化。利用LTC3331电源管理芯片来进行整流、变压,将能量存储在可充电电池的同时,又将一部分电能作为整个系统的工作能源,实现优化系统的自供电。     

Improved performance of polymer photodetectors using indium–tin-oxide modified by phosphonic acid-based self-assembled monolayer treatment

For organic photodetectors (OPDs), in order to realize high incident-photon-to-current conversion efficiency (IPCE) and high on/off ratio, the characteristics of hole-only devices and polymer photodetectors with indium–tin-oxide (ITO) modified by phosphonic acid-based self-assembled monolayer treatment in a short time are investigated. 1H,1H,2H,2H-Perfluorooctanephosphonic acid (FOPA) treatment results not only in lowering of the injection barrier at the ITO/organic layer interface but also in the lowering of the contact resistance between ITO and the organic layer. An OPD based on a blend of a donor, poly(9,9-dioctylfluorene-co-bithiophene) (F8T2), and an acceptor, fullerene derivative [6-6]phenyl-C61-butyric acid methyl ester (PCBM) with FOPA treatment exhibits blue-light sensitivity and IPCE of approximately 75% at −4 V. For the F8T2:PCBM device with FOPA, the IPCE is improved, and the dark current hardly increases. F8T2:PCBM device with FOPA treatment exhibits high on/off ratio, wide detector dynamic range and cut-off frequency of more than 10 MHz under reverse voltage.     

Tuning the Charge Transfer Dynamics of the Nanostructured GaN Photoelectrodes for Efficient Photoelectrochemical Detection in the Ultraviolet Band

The intriguing surface sensitivity of the single-crystalline semiconductor nanowires offers tremendous opportunity in tuning the physical properties of nanophotonic and nanoelectronic devices for versatile applications. Particularly, in the pursuit of emerging photoelectrochemical (PEC)-type devices, significant efforts have been devoted to understanding the charge transfer dynamics between the nanowires and the electrolyte. Here, a PEC-type ultraviolet photodetector consisting of GaN p-n junction nanowires as photoelectrodes is constructed. It is found that two competing charge transport processes at the nanowires’ surface as well as in the p-n junction co-determine the photoresponsive behavior of the device. Furthermore, the surface platinum (Pt) decoration has successfully tuned the charge transfer dynamics by enhancing the charge transport efficiency at the surface, resulting in a twenty-fold increase of the photocurrent compared to the pristine GaN nanowires. Theoretical calculations reveal that the newly formed electronic states at the Pt/GaN interface account for the improved charge transfer at the surface, and the optimal hydrogen adsorption energy contributes to the boosted PEC reaction rate. The synergy of these two effects uncover the underlying mechanism of the high photoresponse of the constructed Pt/GaN-nanowires-based PEC photodetectors.     

Optical and electrical properties of two-dimensional anisotropic materials

Two-dimensional(2D) anisotropic materials, such as B-P, B-As, GeSe, GeAs, ReSe2, KP15 and their hybrid systems, exhibit unique crystal structures and extraordinary anisotropy. This review presents a comprehensive comparison of various 2D anisotropic crystals as well as relevant FETs and photodetectors, especially on their particular anisotropy in optical and electrical properties. First, the structure of typical 2D anisotropic crystal as well as the analysis of structural anisotropy is provided. Then, recent researches on anisotropic Raman spectra are reviewed. Particularly, a brief measurement principle of Raman spectra under three typical polarized measurement configurations is introduced. Finally, recent progress on the electrical and photoelectrical properties of FETs and polarization-sensitive photodetectors based on 2D anisotropic materials is summarized for the comparison between different 2D anisotropic materials. Beyond the high response speed, sensitivity and on/off ratio, these 2D anisotropic crystals exhibit highly conduction ratio and dichroic ratio which can be applied in terms of polarization sensors, polarization spectroscopy imaging, optical radar and remote sensing.     

Novel Type of Wide\|Bandwidth GaAs/AlGaAs Infrared Photodetectors

A novel asymmetrical GaAs/AlGaAs photoconductance infrared detector based on the new idea proposed in this paper has been developed,which uses the intersubband transition within the same conduction (valence) band due to infrared radiation.The detectors with two wells or six wells grown by Metalorganic Chemical Vapor Deposition (MOCVD) system are fabricated by etching a mesa size of 200μm×200μm.Evident infrared absorption on the wavelength from 5 to 10μm has been observed for two samples,so has the peak of negative differential conductance.It is demonstrated that the photocurrent together with the signal\|to\|noise ratio increases with the number of the wells,but have nothing to do with the increase of the noise current under the same electric field,i.e.,the voltage drops per period,as is different from the conventional GaAs/AlGaAs Quantum Well Infrared Photodetectors (QWIPs).The noise current is one order's magnitude lower than that of the conventional GaAs/AlGaAs QWIPs.It is anticipated that the photocurrent and detector performances can be improved further by increasing the number of wells and optimizing the structural parameters.