HIRFL-CSR重离子束内散射效应

电子冷却本质上是电子冷却作用与重离子束内散射作用的动态平衡过程. 在Bjorken和Mtingwa束内散射理论的基础上, 应用对称椭圆积分的方法做束内散射增长率的数值模拟, 并应用于HIRFL-CSR的磁铁聚焦结构. 计算结果表明, 束内散射不会成为CSR磁聚焦结构设计的障碍, 并且CSR可以达到冷却设计指标.     

Surface layer self diffusion in icosahedral Al-Pd-Mn quasicrystals

The self diffusion of Mn and Pd in a single grain icosahedral Al_69.9Pd_20.5Mn_9.6 quasicrystal has been determined by low energy ion scattering (LEIS). The diffusion was determined by depositing different elements (Pd, Mn) on the surface and measuring the rate of change in surface composition as a function of temperature by LEIS. The surface composition was monitored over the temperature range of 355-575 K for Mn and 440-745 K for Pd and compared to model calculations to allow the activation energy for diffusion to be determined. Activation energies of 0.20 ± 0.01 eV for Mn and 0.64 ± 0.03 eV for Pd have then been measured for self diffusion in i-Al-Pd-Mn, respectively. No deviation from Arrhenius behavior was detected in the temperature range covered by the present experiments. From the low values of activation energy we propose that this range of diffusion is phason related, reflecting the specific nature of the icosahedral structure.     

Metal interface formation studied by high-energy reflection energy loss spectroscopy and electron Rutherford backscattering

We demonstrate that high-energy, high-resolution reflection electron energy loss spectroscopy can provide unique insights into interface formation, especially for the case where an extended interface is formed. By changing the geometry and/or electron energy the electronic structure can be probed over a range of thicknesses (from 10s of Å to more than 1000 Å). At the same time one resolves the elastically scattered electrons into different components, corresponding to scattering of atoms with different mass (so-called ‘electron Rutherford backscattering’). Thus these high-energy REELS/elastic scattering experiments obtain information on both the electronic structure and the atomic composition of the overlayer formed.     

The effect of Pt on Ni3Al surface oxidation at low-pressures

The fully-oxidized surface that forms on (1 1 1) oriented Ni₃Al single crystals, with and without Pt addition, at 300-900 K under oxygen pressures of ca. 10⁻⁷ Torr was studied using XPS, AES, and LEIS. Two main types of surfaces form, depending upon oxidation temperature. At low-temperature, the predominant oxide is NiO, capped by a thin layer of aluminum oxide, which we refer to generically as Al_xO_y. At high-temperature (i.e., 700-800 K), NiO is replaced by a thick layer of Al_xO_y. By comparing samples that contain 0, 10 and 20 at.% Pt in the bulk, we find that the effect of Pt is to: (1) reduce the maximum amount of both NiO and Al_xO_y; and (2) shift the establishment of the thick Al_xO_y layer to lower temperatures. Platinum also decreases the adsorption probability of oxygen on the clean surface.     

Segregation of Pt at clean surfaces of (Pt, Ni)3Al

Experimental evidence for surface segregation of Pt at (1 1 1) surfaces of ternary (Pt, Ni)₃Al alloys is presented, based upon Auger electron spectroscopy, low energy ion scattering, and angle-resolved X-ray photoelectron spectroscopy. Density functional calculations in the dilute limit confirm that Pt segregation is energetically favored.     

Prediction of structure-dependent charge transfer rates for a Li atom outside a Si(0 0 1) surface

We investigate the broadening of the 2s energy level of a Li atom outside a Si(0 0 1) surface using a first principles approach. The covalent nature of the Si surface produces large variations in Li energy level widths as a function of lateral position across the surface. The widths above symmetric Si dimers are predicted to be much larger than above buckled Si dimers, suggesting that charge transfer will occur primarily above symmetric dimers. We discuss the ramifications of our results on the controversy surrounding the relative abundance of the buckled vs. symmetric dimers on the Si surface.     

Quantitative interpretation of the low-loss electron signal

Low-loss electron spectra from clean elemental standards of C, Si, Cr, Fe, Cu, Ag, and Au are presented and theoretically interpreted with the aid of two basic theories. One of these assumes a simple elastic scattering and Bethe loss regime in which the low-loss signal arises from primary electrons that have undergone a single large-angle scattering event and whose energy loss is described by the continuous slowing down approximation. However, better qualitative agreement with experiment is obtained when multiple elastic scattering is considered via the transport approximation for electron deflection. The simple low-loss electron detector used to obtain the data is also described.     

Effects of metal irises on the guided-mode properties in asymmetrical slab waveguides

The diffraction phenomenon caused by metal transverse irises placed into an asymmetrical slab waveguide is examined by using the integral equation method. We concentrate on the possibility of controlling the radiation characteristics of the structure by changing the irises positions and the slab waveguide asymmetry. The aperture electric-field distribution is expressed in terms of a finite series of Chebyshev polynomials. The dominant TE guided-mode reflection and transmission coefficients, the near-field distribution and the far-field radiation pattern are calculated, while numerical results are presented for several cases of asymmetrical slab waveguides and different irises’ positions.     

Formation of the Si/Ti interface

The formation of the Si/Ti interface during the deposition of silicon on titanium polycrystalline substrates has been studied at room temperature (RT) using X-ray photoelectron spectroscopy (XPS), angle-resolved XPS (ARXPS), ultraviolet photoelectron spectroscopy (UPS) and ion scattering spectroscopy (ISS). The experimental results are consistent with a two-stage mechanism for Si growth: a first stage characterized by the simultaneous formation of a uniform titanium silicide layer, that reaches a limiting thickness of ∼3 monolayer (ML), and pure silicon islands 1 ML thick that grow on top of this layer up to coalescence, followed by a second stage in which pure silicon islands, with an average thickness of 9 ML, grow on top of the uniform titanium silicide layer + pure silicon ML structure formed during the first stage. As a whole, pure silicon species grows according to a Stranski-Krastanov mechanism, where the first ML is formed during the first stage and the islands during the second stage. The comparison of Ti/Si and Si/Ti interfaces shows that the structure and composition of the interface do not depend substantially on the deposition sequence, suggesting that the bulk chemistry of the compound formed at the interface dominates over the surface kinetics and the bulk substrate chemistry in determining the composition and structure of the interface.     

Scattering of a Light Particle by a System of Harmonic Oscillators

We discuss the asymptotic wave function of a quantum system in ?³ composed by heavy and light particles, in the case where the light particles are in scattering states and no interaction is assumed among particles of the same kind. We first review a recent result concerning the case of K heavy and N light particles, where the one-particle potential acting on each heavy particle decays at infinity. Then we consider the case of one light particle interacting with a system of harmonic oscillators and prove the same kind of result following, with some modification, the proof of the previous case. A possible application to the analysis of the scattering of a light particle from condensed matter is also outlined.