The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire

This paper presents a comparative study of the properties of GaN grown by organometallic vapor phase epitaxy, using both a GaN and A1N buffer layer, as a function of sapphire orientation (c-plane vs a-plane). Results are presented for varying the thickness of the buffer layer, varying the growth temperature of the GaN film, and also varying the ammonia/trimethylgallium mass flow ratio. The electron Hall mobilities of GaN films grown on an A1N buffer layer were, in general, higher compared to films grown using a GaN buffer layer. In addition, growth on a-plane sapphire resulted in higher quality films (over a wider range of buffer thicknesses) than growth on c-plane sapphire. The room temperature electron mobilities were also found to be dependent on, not only the growth temperature, but also the ammonia/trimethylgallium mass flow ratio.     

Subtilisin catalysis of substrate anchored in cyclodextrin

The N-benzoyl-l-tyrosine ethyl ester (BTEE) anchored in cyclodextrin (β and β-methyl CD) serves as an excellent substrate for subtilisin Carlsberg catalysis. The rate of hydrolysis was found to be approximately twofold higher than that of the methanolic substrate. The K_mapp and V_max values for the CD anchored substrates were significantly higher than the methanol-solubilized BTEE.     

可调谐的双波长钛宝石激光器

一台可调谐钛宝石激光器两个波长同时运转,在数ns以内同步,相对波长差最大可达55nm。观测到明显的两种波长激光的竞争和关联。由BBO实现了两波的和频与倍频。     

单层光学薄膜中薄膜－衬底体系的双重干涉效应及其应用

提出了单层光学薄膜中薄膜与衬底反射光之间的双重干涉效应的理论，实验结果证实了理论分析的正确性。双重干涉效应使薄膜－衬底体系的热致反射调制度高达８０％，这一效应可望有极广泛的应用     

以国产微晶纤维素膜作固体基质五种多环芳烃的室温磷光法研究

本文考察了10种国产纤维素膜用于多环芳烃固体基质室温磷光(SS-RTP)的可行性。实验表明:MN-C和MN-P两种型号的微晶纤维素膜用于多环芳烃的SS-RTP是适宜的。阴离子交换纤维素膜、CM-纤维素膜和聚酰胺-6膜也能诱导出多环芳烃的RTP来,但其性能逊于前两种。故本文应用MN-C和MN-P两种微晶纤维素膜基质考察了五种多环芳烃的RTP特征,并建立了它们的SS-RTP新方法。并与用滤纸作基质的实验结果进行了比较,表明两种新的固体基质的RTP性能优于滤纸基质。     

金属基上以YSZ为过渡层的YBCO薄膜的微观结构

采用透射电子显微术（ＴＥＭ），研究了用磁控溅射技术在柔性金属基体上制备的、钇稳定的ＺｒＯ２（ＹＳＺ）为过镀层的ＹＢａ２Ｃｕ３Ｏ７－ｙ（ＹＢＣＯ）薄膜的横断面结构。所得ＹＢＣＯ膜的超导临界转变温度Ｔｃ为９１Ｋ，临界电流密度Ｊｃ＝２×１０３Ａ／ｃｍ２（７７Ｋ，０Ｔ）。基体为Ｎｉ基合金（ＨａｓｔｅｌｏｙＣ）。ＹＳＺ层为致密、均匀的细晶组织，约１２μｍ厚，具有织构取向，并与基体紧密连接。ＹＢＣＯ层的厚度不均匀，约５００ｎｍ；ＹＢＣＯ／ＹＳＺ界面有时连接较差，在该界面上有杂质出现，杂质有可能引发裂纹。     

Sol Gel Processing of Low Permittivity,Fiber-Reinforced SiO2-Polyimide Substrates

Low permittivity ceramic substrates with a sandwich structure consisting of a porous, fiber-reinforced SiO₂ core and two thin polymer plates were fabricated by sol-gel processing, and polymer infiltration. The rheological behavior of an aqueous colloidal SiO₂ sol, containing short SiO₂ fibers was studied as a function of particle loading, fiber loading and gelation time. Short SiO₂ fibers were introduced to limit drying shrinkage and thus minimize substrate cracking during drying. After the psuedoplastic sol was tape cast and sintered at 1150°C for 2 h, a polyimide solution was infiltrated into the porous SiO₂ core. Permittivities ranging from 1.81 to 3.08 could be obtained by using 32–42% SiO₂, 5–50% polyimide and 63 to 8% porosity. The substrate strength was increased from 1.93 MPa to 3.83 MPa after polyimide infiltration.     

溶胶-凝胶法制备高取向Bi4Ti3O12/SrTiO3(100)薄膜

Bi4Ti3O12具有良好的铁电、电光等性能山、特别是Bi4Ti3O12薄膜很适合作永久性存储材料，也可用于电光器件问．在微电子学、光电子学、集成光学、集成铁电学等领域均有广泛开发和应用前景，国外已用溅射法、激光沉积法制备出c轴取向Bi。Ti3Ol。薄膜【’，＼山东大学用MOCVD法制     

Aminolysis ofO-alkylO-4-nitropyenyl chloromethylphosphonates in reverse micellar solutions of the nonionic surfactant

The reaction ofn-hexylamine withO-alkylO-4-nitrophenyl chloromethylphosphonates in toluene solutions of poly(ethylene glycol)-600 monolaurate (PM) has been studied by spectrophotometry. The reverse micelles of the nonionic surfactant increase more than tenfold the observed rate constant of aminolysis. The catalytic activity of the surfactant is practically independent of the alkyl radical length of phosphonate. An increase in the concentration of amine results in a decrease in the catalytic efficiency. The character of the dependence of the rate constant on the concentration of PM is affected by the alkyl chain length of the substrate. Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 9, pp. 1735–1738, September, 1998.