射频磁控溅射ZnO薄膜的光致发光

用射频磁控溅射法在硅衬底上沉积出具有良好的择优取向的多晶ZnO薄膜.在室温下进行光致发光测量,观察到明显的紫光发射(波长为402nm)和弱的紫外光发射 (波长为384nm).紫光发射源于氧空位浅施主能级到价带顶的电子跃迁;紫外光发射则源于导带与价带之间的电子跃迁.随着光激发强度的增加,紫光发射强度超线性增强,且稍有蓝移,而紫外光发光强度则近似线性增加.在氧气中高温退火后,薄膜结晶质量明显提高,紫光发射强度变弱,紫外光发射相对增强.     

中红外光学材料的高温性能研究

红外光学材料是红外技术应用的基础之一。适用于3~5μm波段的中波红外光学材料正向高性能、大尺寸、低成本等方面发展,具有广阔的应用前景。介绍了尖晶石陶瓷、蓝宝石晶体和氟化镁多晶等中红外光学材料的基本性质,开展了制备技术、光学性能、力学性能和热学性能的研究,比较了温度对发射率、抗弯强度和热导率的影响。结果表明:尖晶石陶瓷具备较高的发射率;氟化镁多晶抗弯强度较差;蓝宝石晶体综合性能较佳,适用于制备基于高温应用的弧形光学器件。     

替代衬底上的碲镉汞长波器件暗电流机理

基于暗电流模型,通过变温I-V分析长波器件(截止波长为9~10μm)的暗电流机理和主导机制.实验对比了不同衬底、不同成结方式、不同掺杂异质结构与暗电流成分的相关性.结果表明,对于B+离子注入的平面结汞空位n~+-on-p结构,替代衬底上的碲镉汞(HgCdTe)器件零偏阻抗(R0)在80 K以上与碲锌镉(CdZnTe)基碲镉汞器件结阻抗性能相当.但替代衬底上的HgCdTe因结区内较高的位错,使得从80 K开始缺陷辅助隧穿电流(I_(tat))超过产生复合电流(I_(g-r)),成为暗电流的主要成分.与平面n~+-on-p器件相比,采用原位掺杂组分异质结结构(DLHJ)的p~+-on-n台面器件,因吸收层为n型,少子迁移率较低,能够有效抑制器件的扩散电流.80 K下截止波长9.6μm,中心距30μm,替代衬底上的p~+-on-n台面器件品质参数(R0A)为38Ω·cm2,零偏阻抗较n-on-p结构的CdZnTe基碲镉汞器件高约15倍.但替代衬底上的p+-on-n台面器件仍受体内缺陷影响,在60 K以下较高的Itat成为暗电流主导成分,其R0A相比CdZnTe基n~+-on-p的HgCdTe差了一个数量级.     

Pixel‐Structured Scintillator with Polymeric Microstructures for X‐Ray Image Sensors

We introduce a pixel‐structured scintillator realized on a flexible polymeric substrate and demonstrate its feasibility as an X‐ray converter when it is coupled to photosensitive elements. The sample was prepared by filling Gd₂O₂S:Tb scintillation material into a square‐pore‐shape cavity array fabricated with polyethylene. For comparison, a sample with the conventional continuous geometry was also prepared. Although the pixelated geometry showed X‐ray sensitivity of about 58% compared with the conventional geometry, the resolving power was improved by about 70% above a spatial frequency of 3 mm^?1. The spatial frequency at 10% of the modulation‐transfer function was about 6 mm^?1.     

准连续波掺钛蓝宝石激光器的研究

采用三镜驻波腔和四镜驻波腔,以声光调Q内腔倍频Nd：YAG激光泵浦钛宝石激光器．实现了钛宝石激光器的准连续运转。当输出镜透过率为20％,泵浦光平均功率为7W时,获得钛宝石激光最大输出平均功率为0．95W,转换效率为13．6％,同时实现了720—820nm波长的连续调谐输出。     

The effects of process conditions and substrate on copper MOCVD using liquid injection of (hfac)Cu(vtmos)

Copper MOCVD (metalorganic chemical vapor deposition) using liquid injection for effective delivery of the (hfac)Cu(vtmos) [1,1,1,5,5,5-hexafluoro-2,4-pentadionato(vinyltrimethoxysilane) copper(I)] precursor has been performed to clarify growth behavior of copper films onto TiN, <100> Si, and Si₃N₄ substrates. Especially, we have studied the influences of process conditions and the substrate on growth rates, impurities, microstructures, and electrical characteristics of copper films. As the reactor pressure was increased, the growth rate was governed by a pick-up rate of (hfac)Cu(vtmos) in the vaporizer. The apparent activation energy for copper growth over the surface-reaction controlled regime from 155°C to 225°C was in the range 12.7–32.5 kcal/mol depending upon the substrate type. It revealed that H₂ addition at 225°C substrate temperature brought about a maximum increase of about 25% in the growth rate compared to pure Ar as the carrier gas. At moderate deposition temperatures, the degree of a <111> preferred orientation for the deposit was higher on the sequence of <Cu/Si<Cu/TiN<Cu/Si₃N₄. The relative impurity content within the deposit was in the range 1.1 to 1.8 at.%. The electrical resistivity for the Cu films on TiN illustrated three regions of the variation according to the substrate temperature, so the deposit at 165°C had the optimum resistivity value. However, the coarsened microstructures of Cu on TiN prepared above 275°C gave rise to higher electrical resistivities compared to those on Si and Si₃N₄ substrates.     

液晶显示玻璃基板激光切割热应力场的有限元仿真

激光切割玻璃基板是一个复杂的激光与材料相互作用的过程。为了掌握切割过程中热应力场的动态分布,提高切割质量,提出了一种热应力场的仿真方法。在有限元软件Ansys环境下,建立了三维液晶显示玻璃基板激光切割热应力场的有限元分析模型。采用间接法方式对温度场和热应力场进行耦合;通过APDL参数化编程语言,实现了对激光移动热源及射流冲击换热模型的仿真。仿真结果表明:在切割过程中,激光照射区内表现为压应力,压应力最大值出现在热源中心处;在激光光斑前、后一段距离内及冷却点附近均表现为拉应力。增大冷却效果及减小冷却点与激光光斑间的距离,均可增大拉应力δy的值。     

新型Ku波段基片集成波导缝隙阵列天线设计

介绍了基片集成波导缝隙天线的相关理论,以及宽边基片集成波导缝隙驻波阵的设计方法。首先,根据指标要求,利用HFSS电磁仿真软件来获取缝隙初始导纳参数;然后,使用Matlab软件进行数据拟合;最终,得到缝隙电导与缝隙偏置的数学函数。采用该方法设计了中心频率为15. 9 GHz 的4 元等幅同相的驻波直线阵,仿真得到在15. 8 GHz ~16 GHz 频段内驻波比小于1. 88。     

Si衬底和Si-SiO_2-Si柔性衬底上的GaN生长

使用MBE方法在Si(111)衬底和Si SiO2 Si柔性衬底上生长了GaN外延层 ,并对在两种衬底上生长的样品进行了对比分析 .在柔性衬底上获得了无裂纹的外延层 ,其表面粗糙度为 0 6nm .研究了GaN外延层中的应力及其光学性质 ,光致发光测试结果表明柔性衬底上生长的外延层中应力和杂质浓度明显低于直接生长在Si衬底上的样品的值 .研究结果显示了所用柔性衬底有助于改善GaN外延膜的质量     

一种非谐振式MEMS电磁能量收集器

介绍了一种新型非谐振式微电子机械系统(MEMS)电磁振动能量采集器的设计、微加工和表征测试.该能量收集器由MEMS结构、线圈、小型化NdFeB磁体和陶瓷基板组成.建立结构模型对结构固有频率、位移和应力进行仿真.利用MEMS技术制备能量收集器结构和Al线圈等关键部件,并结合嵌有永磁体的陶瓷基板进行组装,在组装过程中使用C...