新型应力不敏感FBG温度传感封装结构

光纤Bragg光栅（FBG）可以同时传感多个参量,但当仅需测量一个参量时,测量结果可能会受到一个或多个其他参量的影响,其中以温度和应力交叉敏感最为突出。为此,对比了其他几种应力不敏感型FBG温度传感器的优缺点,设计了一种新型的应力不敏感FBG温度传感封装结构,并通过实验验证了其温度传感性能及应力不敏感性。     

用于监测硅片应力的红外光弹仪

为检测硅片在制造工艺中的应力变化,研制了可用于硅片应力检测/监测的红外光弹(IRPE)系统,获得了芯片的红外光弹图像.利用该系统得出了硅通孔(TSV)结构在退火过程中的应力变化,并发现虽然制造技术和工艺完全一样,但每个TSV的初始残余应力是不同的.不同的TSV取得零应力的温度点也不相同,然而当温度达到一定值时,所有TSV都将保持零应力状态.此外,该系统也用于晶圆键合质量的评价,相对于一般红外显微镜,其检测效果更佳,与超声法相比,其检测效果相当,但效率更高且不需耦合剂.     

Responses of Issatchenkia terricola WJL-G4 upon Citric Acid Stress

This study aimed to elucidate the responses of a novel characterized Issatchenkia terricola WJL-G4 against citric acid stress by performing physiological analysis, morphology observation, and structural and membrane fatty acid composition analysis. The results showed that under citric acid stress, the cell vitality of I. terricola WJL-G4 was reduced. The cell morphology changed with the unclear, uncompleted and thinner cell wall, and degraded the cell structure. When the citric acid concentration was 20 g/L, I. terricola WJL-G4 could tolerate citric acid and maintain the cell structure by increasing the intracellular pH, superoxide dismutase activity, and contents of unsaturated fatty acids. As the citric acid concentration was ≥80 g/L, the stress has exceeded the cellular anti-stress ability, causing substantial cell damage. The cell membrane permeability, the content of membrane lipids, malondialdehyde and superoxide anion increased, but the intracellular pH and superoxide dismutase activities decreased, accompanying the increase of citric acid concentrations. The findings of this work provided a theoretical basis for the responsive mechanism of I. terricola WJL-G4 under high concentrations of citric acid, and can serve as a reference for biological acid reduction in fruit processing.     

激光淬火+冲击复合强化处理QT800-2的实验研究

对经激光淬火强化处理后的球墨铸铁QT800-2的强化区域再进行激光冲击强化处理进行了研究。结果表明,复合强化处理后的球墨铸铁QT800-2与经激光淬火强化处理区域相比,各项机械性能都得到了较大提高,其中硬度提高了18％,耐磨性提高了100％,尤其是材料内部残余应力全部变成了残余压应力。     

一种最小电压应力的软开关无桥PFC技术研究

针对传统桥式整流升压功率因数校正(PFC)电路效率较低的缺点,提出了一种最小电压应力的软开关无桥PFC电路拓扑.在理论分析和仿真验证的基础上,研制了一台300 W的实验样机.结果表明,改进的无桥PFC电路拓扑具有通态损耗低、电流采样简单,能实现开关管零电压关断和零电流开通,同时实现整流二极管零电压导通和接近零电流软关断...     

Structural characteristics and residual stresses in oxide films produced on Ti by pulsed unipolar plasma electrolytic oxidation

Oxide films, 7–10 µm thick, were produced on commercially pure titanium by plasma electrolytic oxidation in a sodium orthophosphate electrolyte using a pulsed unipolar current with frequency (f) and duty cycle (δ) varying within f = 0.1–10 kHz and δ = 0.8–0.2, respectively. The coatings comprised a mixture of an amorphous phase with nanocrystalline anatase and rutile phases, where the relative rutile content range was 17–25 wt%. Incorporation of phosphorus from the electrolyte into the coating in the form of PO₂ ^–, PO₃ ^2– and PO₄ ^3–, as demonstrated by EDX and FT-IR analyses, contributed to the formation of the amorphous phase. Residual stresses associated with the crystalline coating phase constituents were evaluated using the X-ray diffraction sin² ψ method. It was found that, depending on the treatment parameters, internal direct and shear stresses in anatase ranged from–205 (±17) to–431 (±27) MPa and from–98 (±6) to–145 (±10) MPa, respectively, whereas the rutile structure is comparatively stress-free.     

室温下Cu/Sn3.5Ag焊点/Cu体系中电迁移引发裂纹的形成

Electromigration （EM） behavior of Cu/Sn3.5Ag/Cu solder reaction couple was investigated with a high current density of 5 × 10^3 A/cm^2 at room temperature. One dimensional structure, copper wire/solder ball/copper wire SRC was designed and fabricated to dissipate the Joule heating induced by the current flow. In addition, thermomigration effect was excluded due to the symmetrical structure of the SRC. The experimental results indicated that micro-cracks initially appeared near the cathode interface between solder matrix and copper substrate after 474 h current stressing. With current stressing time increased, the cracks propagated and extended along the cathode interface. It should be noted that the continuous Cu6Sn5 intermetallic compounds （IMCs） layer both at the anode and at the cathode remained their sizes. Interestingly, tiny cracks appeared at the root of some long columntype Cu6Sn5 at the cathode interface due to the thermal stress.     

Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements

The diffusion barrier properties of PVD Ru and PECVD / PEALD Ru-C films, deposited by RuEtcp₂ precursor and N₂/H₂ plasma, were compared on the basis of bias temperature stress measurements. An MIS test structure was used to distinguish between thermal diffusion induced by annealing and a Cu field drift due to applied electric fields. BTS-CV, TZDB and TDDB measurements revealed that the barrier performance is significantly better for PEALD and PECVD Ru-C films. This improvement is associated with carbon impurities in the Ru films with a concentration in the order of several percent according to ToF-SIMS and ERDA. The TDDB mean time to failure at 250 °C, +5 MV/cm was 7 s for PVD Ru samples, ≈500 s for PECVD Ru-C, ≈800 s for PEALD Ru-C and >3600 s for PVD TaN. Triangular voltage sweep measurements at 300 °C, 0.1 V/s confirmed the presence of Cu ions inside the SiO₂ for degraded dots, in contrast to the Al reference sample and to PVD TaN, which performed best among all the Cu barriers under test. XRD data suggests that PEALD and PECVD Ru-C films are only weakly crystalline.     

From defects creation to circuit reliability - A bottom-up approach (invited)

This paper presents a theoretical framework about interface states creation rate from Si-H bonds at the Si/SiO₂ interface. It includes three mains ways of bond breaking. In the first case, the bond can be broken thanks to the bond ground state rising with an electrical field. In the two others cases, incident carriers will play the main role either if there are very energetic or very numerous but less energetic. This concept allows us physically modeling the reliability of MOSFET transistors, and particularly NBTI permanent part, and Channel Hot Carrier (CHC) to Cold Carrier (CCC) damage. Finally, the translation of these physical models into reliability spice models is discussed. These models pave the way to Design-in Reliability (DiR) approach which seeks to provide a quantitative assessment of reliability - CMOS device reliability in this case - at design stage thereby enabling judicious margins to be taken beforehand.     

基于残差与注意力机制的原棉杂质检测北大核心CSCD

针对原棉杂质检测准确率不高的问题,以新疆棉花为研究对象,提出基于残差与注意力机制的原棉杂质检测算法。该算法为2阶段算法,准确率较高。首先,采集原棉杂质图象后对图像进行标注,再进行数据增广,可以避免训练过程中的过拟合现象,接着在原框架引入视觉注意力机制,通过改进算法结构来提高原棉杂质检测的准确率。其次,通过分析对比几种不同网络对原棉杂质检测的准确度,选取ResNet50为特征提取网络,该网络提高了算法的复杂特征提取能力。最后,采用RoI Align来减少量化误差,从而提高检测原棉杂质的准确性。实验结果表明,改进的算法虽然略微增多检测时间,但其整体检测准确率明显优于原算法,整体识别的准确率可达到94.84%,较改进前Faster R-CNN(faster region-based convolutional neural network)的识别率提高了5.58%。同时通过对比不同网络模型,结果显示改进后的Faster R-CNN对原棉杂质检测的效果更好。