Residual stress in polyethylene pipes

This paper deals with residual stress in polyethylene (PE) pipes as an important factor that influences their lifetime. Residual hoop stress distribution in a PE pipe was determined using a methodology previously carried out by the authors on polypropylene pipes. Axial residual stress magnitude was determined by comparison of experimental data and finite element modelling. Based on the obtained results, a new simplified methodology for determining the residual hoop stress is proposed. The method needs only one circular specimen made of pipe, but, unlike older methods, provides a more precise estimation of residual hoop stress distribution taking into account its exponential shape. Some older results from literature are recalculated using this method and residual hoop stress of various PE pipe grades and dimensions are then compared. To provide an idea of residual hoop stress influence on lifetime of a pipe, a lifetime estimation is carried out for the examined pipe.     

A UPLC‐TOF/MS‐based metabolomics study of rattan stems of Schisandra chinensis effects on Alzheimer's disease rats model

A UPLC‐TOF/MS‐based metabolomics method was established to explore the therapeutic mechanisms of rattan stems of S. chinensis (SCS) in Alzheimer's disease (AD). Experimental AD model was induced by intra‐hippocampal Aβ_1–42 injection in rats. Cognitive function and oxidative stress condition in brain of AD rats were assessed using Morris water maze tests and antioxidant assays [malondialdehyde (MDA), superoxide dismutase (SOD) and glutathione peroxidase (GSH‐Px)], respectively. UPLC‐TOF/MS combined with multivariate statistical analysis were conducted to study the changes in metabolic networks in serum of rats. The results indicated that the AD model was established successfully and the inducement of Aβ_1–42 caused a decline in spatial learning and memory of rats. The injection of Aβ_1–42 in rat brains significantly elevated the level of MDA, and reduced SOD and GSH‐Px activities. In addition, SCS showed significant anti‐AD effects on model rats. A total of 30 metabolites were finally identified as potential biomarkers of AD and 14 of them had a significant recovery compared with the AD model after SCS administration. Changes in AD metabolite profiling were restored to different levels through the regulation of 13 pathways. This is first report on the use of the UPLC‐TOF/MS‐based serum metabolomics method to investigate therapeutic effects of SCS on AD, and enrich potential biomarkers and metabolic networks of AD.     

1,4-双(二苯基膦)丁烷交联的季膦化聚芳醚酮阴离子交换膜

以1,4-双(二苯基膦)丁烷为交联剂,以具有四甲基联苯结构的聚芳醚酮为基体材料,分别制备了刚性三苯基膦和柔性三丁基膦修饰的阴离子交联膜材料.交联剂在交联结构形成的过程中转变成季膦盐,在提高膜材料机械稳定性的同时保持离子交换功能基团的含量.研究了2种阴离子交换膜的尺寸稳定性、电导率、机械性能及耐碱稳定性等.研究结果表明,当交联度为20%时,三苯基膦与三丁基膦修饰的阴离子交换膜的拉伸强度分别由未交联时的27和18 MPa提高到45和30 MPa;交联的膜材料在60℃的3 mol/L KOH溶液中浸泡120 h后,三苯基膦修饰的阴离子交换膜的电导率保留率为81%,三丁基膦修饰的阴离子交换膜的电导率保留率为69%,膜的耐碱稳定性均较未交联时有明显提高.交联度相同时,三苯基膦修饰的阴离子交换膜表现出更高的拉伸强度和更好的耐碱稳定性.     

Investigation on the stress behavior of cellulose acetate and the development of highly moisture‐resistant optical films for display devices

An optical film with high optical anisotropy was prepared by the stretching of a cellulose acetate film and the consequential orienting of a retardation‐enhancing additive. The change in retardation in response to moisture absorption was explored and it was found that the degree of the retardation variation is strongly related to the stretching temperature. Stress generated by the stretching and its relaxation was systematically investigated to elucidate the effect of stretching temperature on the irreversible change in retardation upon moisture absorption. The results show that the magnitude of releasable stress plays an important role in controlling changes in optical properties. In addition, the difference in the deformation behavior between glassy and rubbery states should be taken into account in the development of a moisture‐resistant optical film. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2017 , 55, 1470–1478     

A rigid inclusion in an elastic space under the action of a uniform heat flow in the inclusion plane

A solution is presented for the three dimensional static thermoelastic problem of an absolutely rigid inclusion (anticrack) in the case when a uniform heat flow is directed along the inclusion plane. By using the potential method and the Fourier transform technique, the problem is reduced to a system of coupled two-dimensional singular integral equations for the shear stress jumps across the inclusion. As an illustration, a typical application to the circular anticrack is presented. Explicit expressions for the thermal stresses in the inclusion plane are obtained and discussed from the point of view of material failure.     

Propagation of a pre-existing turbulent fluid fracture

The propagation of rough and smooth wall pre-existing turbulent fluid fractures is investigated. The laminar fluid fracture is included as a special case for comparison. Lubrication theory is assumed to apply in the fracture and turbulence is introduced through the wall shear stress. The Perkins–Kern–Nordgren approximation is made in which the fluid pressure is proportional to the half-width of the fracture. The fracture half-width satisfies a non-linear diffusion equation. By using a linear combination of the Lie point symmetries of the non-linear diffusion equation a group invariant solution for the fracture length, volume and half-width is derived. The evolution of the length, half-width and mean flow velocity is analysed for a range of working conditions at the fracture entry. It is found that the mean flow velocity increases approximately linearly along the fracture.     

Risk and reliability assessment about a manufacturing issue in a power MOSFET for automotive applications

In the automotive semiconductor industry, risk assessments are requested by customers on quality incidents that happen in the assembly line or in field. More rarely, in a die business context, such a study is requested about a defect observed during the optical inspection performed by the customers on the known good dice after assembly. This article deals with the case of pin holes in the top metal surface of a MOSFET component. The risk assessment is addressing detection, occurrence and severity of the defect: this implies process and failure analysis. Also, reliability has been carried out, by completing accelerated and typical stress tests.     

The effects of etching and deposition on the performance and stress evolution of open through silicon vias

The effects of silicon etching using the Bosch process and LPCVD oxide deposition on the performance of open TSVs are analyzed through simulation. Using an in-house process simulator, a structure is generated which contains scalloped sidewalls as a result of the Bosch etch process. During the LPCVD deposition step, oxide is expected to be thinner at the trench bottom when compared to the top; however, additional localized thinning is observed around each scallop. The scalloped structure is compared to a structure where the etching step is not performed, but rather a flat trench profile is assumed. Both structures are imported into a finite element tool in order to analyze the effects of processing on device performance. The scalloped structure is shown to have an increased resistance and capacitance when compared to the flat TSV. Additionally, the scalloped TSV does not perform as well at high frequencies, where the signal loss is shown to increase. However, the scallops allow the TSV to respond better to an applied stress. This is due to the scallops’ enhanced range of motion and displacement, meaning they can compensate for the stress along the entire sidewall and not only on the TSV top, as in the flat structure.     

Microstructural and mechanical analysis of Cu and Au interconnect on various bond pads

Effects of High Temperature Storage (HTS) and bonding toward microstructure change of intermetallic compound (IMC) at the wire bonding interface of 3 types of bond pad (Al, AlSiCu and NiPdAu) were presented in this paper. Optical and electron microscope analyses revealed that the IMC growth rate of samples under 175 and 200 °C HTS increased in the order of Al > AlSiCu > NiPdAu. Besides, higher HTS and bonding temperatures also promoted higher IMC thickness. The compositional study showed that higher HTS and bonding temperature developed rapid interdiffusion in bonding interface. In the mechanical ball shear test, a decrease of the shear force of Al and AlSiCu bond pads after 500 h HTS was believed due to poorly developed IMC at bonding interface. On the other hand, shear force degradation at 1000 h was due to excessive growth of IMC that in turn causes the formation of defects. For NiPdAu bond pad, increasing trend of shear force with HTS duration at 175 °C implied a good reliability of the Cu wire bonding. The rapid microscopic inspection on Cu wired Al bond pad under HTS 175 °C showed the IMC development from the periphery to the center of the ball bond. However, after 500 h voids started to develop until the crack was observed at 1000 h.