Characterization of new Pt(IV)–thiazole complexes: Analytical,spectral, molecular modeling and molecular docking studies and applications in two opposing pathways

New thiazole derivatives were synthesized and fully characterized, then coordinated with PtCl₄ salt. Also, the newly synthesized Pt(IV) complexes were investigated analytically (elemental and thermogravimetric analyses), spectrally (infrared, UV–visible, mass, ¹H NMR, ¹³C NMR, X‐ray diffraction) as well as theoretically (kinetics, modeling and docking). The data extracted led to the establishment of the best chemical and structural forms. Octahedral geometry was the only formula proposed for all complexes, which is favorable for d⁶ systems. The molecular ion peaks from mass spectral analysis coincide with all analytical data, confirming the molecular formula proposed. X‐ray diffraction (XRD) and scanning electron microscopy (SEM) allowed discrimination of features between crystalline particles and other amorphous morphology. By applying Gaussian09 as well as HyperChem 8.2 programs, the best structural forms were obtained, as well as computed significant parameters. Computed parameters such as softness, hardness, surface area and reactivity led us towards application in two opposing pathways: tumor inhibition and oxidation activation. The catalytic oxidation for CO was conducted over PtO₂, which was yielded from calcination of the most reactive complex. The success of catalytic role for synthesized PtO₂ was due to its particulate size and surface morphology, which were estimated from XRD patterns and SEM images, respectively. The antitumor activity was tested versus HCT‐116 and HepG‐2 cell lines. Mild toxicity was recorded for two of the derivatives and their corresponding complexes. This degree of toxicity is more favorable in most cases, due to exclusion of serious side effects, which is coherently attached with known antitumor drugs.     

Annealing and doping-dependent magnetoresistance in single layer poly(3-hexyl-thiophene) organic semiconductor device

We compare the current density–voltage (J–V) and magnetoconductance (MC) response of a poly(3-hexyl-thiophene) (P3HT) device (Au/P3HT(350 nm)/Al) before and after annealing above the glass transition temperature of 150 °C under vacuum. There is a decrease of more than 3 orders of magnitude in current density due to an increase of the charge injection barriers after de-doping through annealing. An increase, approaching 1 order of magnitude, in the negative MC response after annealing can be explained by a shift in the Fermi level due to de-doping, according to the bipolaron mechanism. We successfully tune the charge injection barrier through re-doping by photo-oxidation. This leads to the charge injection and transport transitioning from unipolar to ambipolar, as the bias increases, and we model the MC response using a combination of bipolaron and triplet-polaron interaction mechanisms.     

Et2Zn-mediated stoichiometric C(sp)-H silylation of 1-alkynes and chlorosilanes

A first example of an Et₂Zn mediated silylation of 1-aklynes is reported. A series of functional groups are tolerated in this reaction. Mechanistic studies support Zn alkynilides as intermediates in the reaction. This reaction protocol provides a practical method for the preparation of alkynylsilanes and expands the application of organometallic zinc in organic synthesis.     

On Potentially Abelian Geometric Representations

The finiteness is proved of the set of isomorphism classes of potentially abelian geometric Galois representations with a given set of data. This is a special case of the finiteness conjecture of Fontaine and Mazur.     

2.4GHz动态CMOS分频器的设计

对现阶段的主流高速CMOS分频器进行分析和比较,在此基础上设计一种采用TSPC(truesingle phase clock)和E-TSPC(extended TSPC)技术的前置双模分频器电路.该分频器大大提高了工作频率,采用0.6μm CMOS工艺参数进行仿真的结果表明,在5V电源电压下,最高频率达到3GHz,功耗仅为8mW.     

等离子体刻蚀工艺控制模型分析

讨论了主因素分析法以及神经网络法在等离子体刻蚀工艺中的应用.结果表明主元素分析法可以实现对数据的压缩,而神经网络算法则显示出比传统的统计过程控制算法更好的准确性.     

两个DEA的逆问题的解法的探讨

文[1]提出了两个DEA的逆问题，并用搜索法来解．而本文根据所证的定理，对每个问题一般只要解二、三个线性规划问题就能得到答案．     

嵌人式与独立存储器设计上的差异分析和研究

进入21世纪,随着集成电路的发展,SoC(System on Chip)片上系统应运而生。而作为SoC重要组成部分的嵌入式存储器,在SoC中所占的比重正逐步增加,并起着越来越重要的作用,那么嵌入式存储器与独立的存储器芯片在设计上存在着哪些差异?对此本文将以NOR型闪存为例在制造工艺的选取、衍生产品的设计、功耗与噪声、后端功能仿真、测试与修复等方面进行分析和研究。     

宽带综合IP网的MPLS技术及其应用

多协议标记交换（MPLS）技术是综合利用网络第二层交换技术的有效性和第三层IP路由的灵活性等优点而产生的多层交换技术。通过在传统的IP包里加入标记，使路由转发依赖于标记，大大地提高IP包的转发速度，同时可使传统IP网络具有服务质量（QoS）能力。现主要分析MPLS体系结构，指出MPLS的一些应用。