隧道围岩反分析与施工数值模拟

结合殷家岩隧道施工,对隧道围岩进行了位移反分析,得到了围岩松动区的弹性模量;应用反分析结果进行数值模拟,预测后续施工步的位移和应力;同时,将预测结果与现场观测进行比较,检验反分析结果。结果表明,利用反分析得到的围岩参数预测后续施工步的位移与现场观测结果比较吻合。     

基于EMD-GA-BP与EMD-PSO-LSSVM的中国碳市场价格预测

由于碳交易市场价格的波动性大及相互影响关系的复杂性,本文试图构建碳价格长期和短期的最优预测模型。考虑到碳交易价格波动的趋势性和周期性特点,基于经验模态分解算法(EMD)、遗传算法(GA)—神经网络(BP)模型、粒子群算法(PSO)—最小二乘支持向量机(LSSVM)模型及由它们构建的组合预测模型,对中国碳市场交易价格进行短期预测和长期预测。实证分析中将影响碳交易价格的不同宏观经济因素和碳价格时间序列因素做为输入变量,分别代入组合模型进行预测。研究结果表明,在短期预测中,EMD-GA-BP模型预测效果优于GA-BP模型和PSO-LSSVM模型;而在长期预测中,组合模型EMD-PSO-LSSVM模型预测效果优于只考虑碳价格波动趋势性或周期性预测效果。     

基于回购契约的风险厌恶零售商的供应链协调

研究了由风险中性的供应商和风险厌恶的零售商组成的二级供应链协调问题.零售商的风险厌恶由CVaR来度量,研究表明：零售商的风险厌恶加剧了双重边际效应,恶化了供应链效益.为了实现供应链的协调,供应商提出回购契约以减轻零售商的风险顾虑引导其增加订货量,结果表明：当零售商的风险厌恶超过了一定的程度,回购契约不能实现供应链协调;当供应链可以通过回购契约实现协调时,供应链的协调利益可以在供应商和零售商之间进行任意的分配,具体的分配结果取决于他们的讨价还价能力.     

A short walk through quantum optomechanics

This paper gives a brief review of the basic physics of quantum optomechanics and provides an overview of some of its recent developments and current areas of focus. It first outlines the basic theory of cavity optomechanical cooling and gives a brief status report of the experimental state‐of‐the‐art. It then turns to the deep quantum regime of operation of optomechanical oscillators and covers selected aspects of quantum state preparation, control and characterization, including mechanical squeezing and pulsed optomechanics. This is followed by a discussion of the “bottom‐up” approach that exploits ultracold atomic samples instead of nanoscale systems. It concludes with an outlook that concentrates largely on the functionalization of quantum optomechanical systems and their promise in metrology applications.     

基于一种NAND闪存页缓存器设计的C/F读取算法研究

为减小共源线噪声对NAND闪存读可靠性的影响,设计了一种可实现C/F（Coarse/Fine）读取操作的页缓存器电路,并设计实现了适用于此电路的C/F读取算法,显著减小了共源线噪声.该算法通过两次子读感应读取存储单元,在第一次子读感应中分辨出阈值电压较低的存储单元并标记在页缓存器中,使其不再进行第二次子读感应,从而减小共源线噪声引起的阈值偏移.电路仿真计算表明,该支持C/F读取算法的页缓存器结构能够减小阈值偏移至少495.6mV,有效提高了NAND闪存读操作的精确性.     

Characteristics of DC magnetron sputtered ternary cobalt-nickel silicide thin films for ultra shallow junction devices

Ternary cobalt-nickel silicide thin films were synthesized by DC magnetron sputtering from an equiatomic cobalt-nickel alloy target. Grazing incidence XRD, Rutherford back scattering, high-resolution cross-sectional TEM analysis and electrical study were carried out to investigate the formation of silicide, stoichiometry, film thickness, depth profile and sheet resistance of as-deposited and post-deposition annealed films. The ternary silicide layer thickness was calculated from RBS simulated data, which was found to vary 20-43 nm for as-deposited and different vacuum annealed films. A minimum value of sheet resistance 2.73 Ω/sq corresponding to a resistivity of ∼8.4 μΩ-cm was obtained for optimized deposition and annealing conditions.     

Theory and experiments on the back side reflectance of silicon wafer solar cells

New passivation layers for the back side of silicon solar cells have to show high performance in terms of electrical passivation as well as high internal reflectivity. This optical performance is often shown as values for the back side reflectance R_b which describes the rear internal reflection. In this paper, we investigate in detail the meaning of this single‐value parameter, its correct determination and the use in one‐dimensional simulations with PC1D. The free‐carrier‐absorption (FCA) as non‐carrier‐generating absorption channel is analyzed for solar cells with varying thickness. We apply the optical analysis to samples with different thickness, silicon oxide layer thickness, rear side topography as well as passivation layers (SiO₂, SiN_x, SiC and stack systems). Additionally, the optical influence of the laser‐fired contacts (LFC) process is experimentally investigated. Finally, we show that with correct parameters, the one‐dimensional simulation of very thin silicon solar cells can successfully be performed. Copyright © 2007 John Wiley & Sons, Ltd.     

Adaptive fuzzy neural network control on the acoustic field in a duct

Base on the principle of the superposition of waves, active noise control is achieved by adaptively tuning a secondary source which produces an anti-noise of equal amplitude and opposite phase with primary source. This paper presents the study on the acoustic attenuation in a duct by using the combination of fuzzy neural network with error back propagation algorithm to control secondary source. The most important advantage of fuzzy inference system is that the structured knowledge is represented in the form of fuzzy IF-THEN rules. But it lacks the ability to accommodate the change of external environments. Combining neural network with fuzzy system can help in this tuning process by adapting fuzzy sets and creating fuzzy rules. The performance of attenuation and control error can be measured by the microphone placed in the downstream of duct. The results of this study, show that the acoustic attenuation by 40 dB for pure-tone noise and nearly 30 dB for dual-tones noise are obtained.     

Optimization of interdigitated back contact silicon heterojunction solar cells: tailoring hetero‐interface band structures while maintaining surface passivation

Interdigitated back contact silicon heterojunction (IBC‐SHJ) solar cells have the potential for high open circuit voltage (V_OC) due to the surface passivation and heterojunction contacts, and high short circuit current density (J_SC) due to all back contact design. Intrinsic amorphous silicon (a‐Si:H) buffer layer at the rear surface improve the surface passivation hence V_OC and J_SC, but degrade fill factor (FF) from an “S” shape J–V curve. Two‐dimensional (2D) simulation using “Sentaurus device” demonstrates that the low FF is related to the valence band offset (energy barrier) at the hetero‐interface. Three approaches to the buffer layer are suggested to improve the FF: (1) reduced thickness, (2) increased conductivity, and/or (3) reduced band gap. Experimental IBC‐SHJ solar cells with reduced buffer thickness (<5 nm) and increased conductivity with low boron doping significantly improves FF, consistent with simulation. However, this has only marginal effect on efficiency since J_SC and V_OC also decrease due to poor surface passivation. A narrow band gap a‐Si:H buffer layer improves cell efficiency to 13.5% with unoptimized passivation quality. These results demonstrate that tailoring the hetero‐interface band structure is critical for achieving high FF. Simulations predicts that efficiences >23% are possible on planar devices with optimized pitch dimensions and achievable surface passivation, and 26% with light trapping. This work provides criterion to design IBC‐SHJ solar cell structures and optimize cell performance. Copyright © 2010 John Wiley & Sons, Ltd.     

黄葆同归国始末：1950年代留美学生回国因素探析

黄葆同院士（1921-2005）是我国高分子化学领域的资深专家。早年留学美国,1955年回国后一直在中国科学院长春应用化学研究所工作。在乙丙橡胶合成等研究领域走在全国前列。基于对“老科学家学术成长资料采集工程”所存大量书信和日记等的解读分析,论文还原了黄葆同在美留学期间加入进步组织、争取回国的历史过程以及求学经历。并以此为缩影,探讨当时促使留美学生回国的个体与社会因素,具体而微地揭示了那一代中国留学生在困境之中的家国情怀。