雪崩击穿条件下4.5kV IGBT器件的背面优化研究

The static avalanche breakdown behavior of 4.5 kV high-voltage IGBT is studied by theory analysis and experiment. The avalanche breakdown behaviors of the 4.5 kV IGBTs with different backside structures are investigated and compared by using the curve tracer. The results show that the snap back behavior of the breakdown waveform is related to the bipolar PNP gain, which leads to the deterioration of the breakdown voltage. There are two ways to optimize the backside structure, one is increasing the implant dose of the N C buffer layer, the other is decreasing the implant dose of the P C collector layer. It is found that the optimized structure is effective in suppressing the snap back behavior and improving the breakdown characteristic of high voltage IGBT.     

Prediction of High Performance Fibers Strength Using Back Propagation Neural Network

Nowadays, quantification of the effects of basic parameters such as precursor, temperature oxidation, residence time, low temperature carbonization (LTC) and high temperature carbonization (HTC) on production process polyacrylonitrile based carbon fibers is not completely understood. In this way, there is not a completely theoretical model that accomplishes to quantitatively describe production process carbon fibers very accurately which needs to be used by engineers in design, simulation and operation of that process. This paper presents the development of a back propagation neural network model for the prediction of carbon fibers produced from PAN fibers. The model is based on experimental data. The precursors, temperature oxidation, residence time, LTC and HTC have been considered as the input parameters and the strength as output parameter to develop the model. The developed model is then compared with experimental results and it is found that the results obtained from the neural network model are accurate in predicting the strength of carbon fibers.     

Na2EDTA返滴定法测定铜镍合金中的镍含量

采用Na₂EDTA返滴定法测定铜镍合金中的镍含量,用柠檬酸钠、硫代硫酸钠和酒石酸作掩蔽剂,丁二酮肟沉淀分离,以二甲酚橙为指示剂,加入过量的Na2EDTA,用氯化锌标准溶液返滴定,能很好地分离铜及其他杂质的干扰。方法用于测定铜镍合金中的镍含量,测定结果的相对标准偏差(RSD,n=9)为0.046%~0.24%,加标回收率为99.3%~101%。能够满足日常样品的检测要求。     

Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (I_sc = 2.09 A), power conversion efficiency (η = 15%), and quantum efficiency (QE~85%) were achieved at a carrier lifetime of 1 × 10³ μs and a doping concentration of 1 × 10¹⁷ cm⁻³ of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 μm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.     

Silver versus white sheet as a back reflector for microcrystalline silicon solar cells deposited on LPCVD‐ZnO electrodes of various textures

We compare the performance of two back reflector designs on the optoelectrical properties of microcrystalline silicon solar cells. The first one consists of a 5‐µm‐thick low‐pressure chemical vapor deposition (LPCVD)‐ZnO electrode combined with a white sheet; the second one incorporates an Ag reflector deposited on a thin LPCVD‐ZnO layer (with thickness below 200 nm). For this latter design, the optical loss in the nano‐rough Ag reflector can be strongly reduced by smoothing the surface of the thin underlying ZnO layer, by means of an Ar‐plasma treatment. Because of its superior lateral conductivity, the thin‐ZnO/Ag back reflector design provides a higher fill factor than the dielectric back reflector design. When decreasing the roughness of the front electrode with respect to our standard front LPCVD‐ZnO layer, the electrical cell performance is improved; in addition, the implementation of the thin‐ZnO/Ag back reflector leads to a significant relative gain in light trapping. Applying this newly optimized combination of front and back electrodes, the conversion efficiency is improved from 8.9% up to 9.4%, for cells with an active‐layer thickness of only 1.1 µm. We thereby highlight the necessity to optimize simultaneously the front and back electrodes. Copyright © 2014 John Wiley & Sons, Ltd.     

Back contact–absorber interface modification by inserting carbon intermediate layer and conversion efficiency improvement in Cu2ZnSn(S,Se)4 solar cell

Carbon layers have been employed as intermediate layers between Mo back contact and Cu₂ZnSn(S_1–xSe_x)₄(CZTSSe) absorber film prepared by sol–gel and post‐selenization method. Carbon layers with appropriate thickness can significantly inhibit the formation of MoSe₂ and voids at bottom region of the absorber, and therefore reduce the series resistance remarkably. The conversion efficiency can be boosted by the introducing of the carbon layer from 6.20% to 7.24% by enhancement in short current density, fill factor and open voltage in comparison to the reference sample without carbon layer. However, excess thickness of carbon layer will worse device performance due to the deteriorated absorber crystallinity. In addition, the time‐resolved photoluminescence analysis shows that inserting the carbon layer with suitable thickness does not introduce recombination and lower minority lifetime. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

接触电极功函数对反式锡基钙钛矿太阳能电池性能的影响

因反式锡基钙钛矿太阳能电池可避免J-V迟滞以及铅元素,基于SCAPS-1D设计结构为ITO/HTL/CH3NH3SnI3/PCBM/back-contact的反式锡基钙钛矿太阳能电池器件.其中NiO、Cu2O以及P3HT分别作为空穴传输层,探讨导电玻璃ITO功函数在4.6?5.0 eV范围内电池性能的变化,并分析Al、...     

应用人工神经网络鉴定高效液相色谱峰纯度

首次应用人工神经网络（ａｒｔｉｆｉｃｉａｌｎｅｕｒａｌｎｅｔｗｏｒｋ,简称ＡＮＮ）鉴定色谱峰纯度,根据判定指标,采用改良反向传播算法对系统进行描述和预报,结果正确,收敛较快,具有一定的理论和实用价值。     

2-乙基己醇萃取-原子吸收光谱法测定微量镓

在７．０ｍｏｌ／Ｌ盐酸介质中,在抗坏血酸存在下,用２－乙基己醇萃取试样溶液中的酸性铬蓝Ｋ－镓的络合物,然后用３０ｇ／Ｌ的硫脲将络合物反萃取到水相中,用ＦＡＡＳ法测定镓,据此建立了萃取反萃取－ＦＡＡＳ法测定微量镓的新方法。方法线性范围为０～６０．０ｍｇ／Ｌ,灵敏度为０．２８ｍｇ／Ｌ／１％,已用于铝酸钠溶液中微量镓的测定。