Back Reaction in Static Einstein Spaces—Change of Entropy

Using the thermodynamical approach and the method of York, the back-reaction of anti-de Sitter Schwarzschild black hole in thermal equilibrium with conformal spin-2 field is studied. It is found that both approaches give identical results.     

Synthesis and application as polymer electrolyte of hyperbranched polyether made by cationic ring‐opening polymerization of 3‐{2‐[2‐(2‐hydroxyethoxy)ethoxy]ethoxymethyl}‐3′‐methyl‐oxetane

A novel cyclic ether monomer 3‐{2‐[2‐(2‐hydroxyethoxy)ethoxy]ethoxy‐methyl}‐3′‐methyloxetane (HEMO) was prepared from the reaction of 3‐hydroxymethyl‐3′‐methyloxetane tosylate with triethylene glycol. The corresponding hyperbranched polyether (PHEMO) was synthesized using BF₃·Et₂O as initiator through cationic ring‐opening polymerization. The evidence from ¹H and ¹³C NMR analyses revealed that the hyperbranched structure is constructed by the competition between two chain propagation mechanisms, i.e. active chain end and activated monomer mechanism. The terminal structure of PHEMO with a cyclic fragment was definitely detected by MALDI‐TOF measurement. A DSC test implied that the resulting polyether has excellent segment motion performance potentially beneficial for the ion transport of polymer electrolytes. Moreover, a TGA assay showed that this hyperbranched polymer possesses high thermostability as compared to its liquid counterpart. The ion conductivity was measured to reach 5.6 × 10^?5 S/cm at room temperature and 6.3 × 10^?4 S/cm at 80 °C after doped with LiTFSI at a ratio of Li:O = 0.05, presenting the promise to meet the practical requirement of lithium ion batteries for polymer electrolytes. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 3650–3665, 2006     

热光双稳态的临界入射功率与临界温升

本文考虑到F—P腔夹层介质和后反射镜均具有一定的吸收时,推导出产生热致色散光学双稳态的临界入射光功率P_c和临界温升△T_c的数学解析表达式。理论计算的 △T_c值与实验值非常符合。为了得到最佳光学双稳态回线和避免腔内的纵向温度梯度,夹层介质和后反射镜应具有一定的匹配吸收。     

锥体棱镜的加工

本文简单地叙述了锥体棱镜两种加工工艺。重点介绍直接成型法加工中对角度误差~1″的控制。并提出了角度超差零件返修时的光胶方法。     

BP神经网络结合变量选择方法在牛奶蛋白质含量检测中的应用北大核心CSCD

牛奶中的蛋白质含量会影响牛奶的品质,利用高光谱图像的光谱特征信息研究对牛奶蛋白质含量预测的可行性。本文提出一种基于竞争性自适应重加权算法(competitive adaptive reweighted sampling, CARS)和连续投影算法(successive projections algorithm, SPA)结合多层前馈神经网络(back propagation, BP)的预测建模方法,实验以含有不同浓度蛋白质的牛奶为对象,利用可见光/近红外高光谱成像系统共采集到5种牛奶共计250组高光谱数据,通过实验对比选择采用标准化方法对获取到的吸收光谱预处理,然后采用CARS结合SPA筛选特征波长,得到18个特征波长,建立CARS-SPA-BP模型,经过试验,CARS-SPA-BP模型的训练集决定系数和测试集决定系数R;和R;分别达到0.971和0.968,训练集均方根误差(root mean square error of calibration,RMSEC)和测试集均方根误差(root mean square error of prediction,RMSEP)达到了0.033和0.034。研究发现,采用CARS结合SPA筛选的牛奶特征波长建立的多层前馈神经网络模型,其模型预测结果与全波长建模相比并没有明显降低,因此将CARS结合SPA用于波长筛选并且结合BP神经网络基本可以完成对牛奶蛋白质含量的预测。为验证CARS-SPA-BP模型的预测能力,在相同数据环境下,使用较为传统的偏最小二乘回归(partial least squares regression, PLSR)进行建模,实验结果表明,CARS-SPA-BP相较于PLSR,R;和RMSEP均有明显提升。研究表明,CARS-SPA-BP可充分利用牛奶光谱特征信息实现较高精度的牛奶蛋白质含量检测。     

n型单晶硅片的电阻率和扩散方阻对IBC太阳电池电性能的影响

叉指背接触式(IBC)太阳电池因正面没有金属栅线遮挡,具有较高的短路电流,且组件外观更加美观。但由于IBC太阳电池正负电极在背面交叉式分布,在制备过程中需要采用光刻掩模技术进行隔离,难以实现大规模生产。采用Quokka软件仿真模拟了电阻率和扩散方阻对n型IBC太阳电池效率的影响,并对不同电阻率和扩散方阻的电池片进行了实验验证,从n型单晶硅片电阻率的选择和扩散工艺优化方面为IBC太阳电池的规模化生产提供了理论基础。实验结果表明,电阻率为3~5Ω·cm、扩散方阻为70Ω/时,小批量生产的IBC太阳电池平均光电转换效率可达23.73%,开路电压为693 mV,短路电流密度为42.44 mA/cm²,填充因子为80.69%。     

催化光度返滴定法测定微量锰的研究

本文研究了催化光度反滴定法测定微量锰的原理，找到最佳实验条件，确立了实验方法，测定波长６２２ｎｍ；反应时间１ｍｉｎ４０ｓ；活化剂ＮＴＡ用量０．６０ｍＬ，ＫＩＯ４与孔雀石绿用量比为１．００：０．３５，室温下滴定；用ｐＨ＝５．４的乙酸－乙酸钠缓冲溶液控制溶液酸度；测定Ｍｎ＾２＋的浓度范围为１×１０＾－７～１×１０＾－５ｍｏｌ／Ｌ，Ｃｏ＾２＋，Ｂｉ＾３＋，Ｃａ＾２＋，Ａｌ＾３＋，Ｐｂ＾２＋，Ｃｕ＾２＋，     

Modeling the Effect of Injection Molding Process Parameters on Warpage Using Neural Network Theory

A back propagation artificial neural network (BPANN) prediction model for warpage of injection-molded polypropylene was developed based on an orthogonal design method. The BPANN model was trained by the input and output data obtained from the moldflow software platform simulations. It is proved that the BPANN model can predict the warpage with reasonable accuracy. Utilizing the BPANN model, the effects of the process parameters, packing pressure (Pp), melt temperature (T_me), mold temperature (T_mo), packing time (t_p), cooling time (t_c), and fill pressure (p_f), on the warpage were investigated. The most important process parameter affecting the warpage was Pp, and the second most important was T_me. The rest of the process parameters, T_mo, t_p, t_c, and p_f, were found to be relatively less influential. Warpage increased with elevating T_mo. In contrast, an increase in Pp and T_me caused the warpage to decrease.     

应用于大功率MMIC开关的AlGaN背势垒GaN HEMT

报道了应用于大功率开关的AlGaN背势垒0.25μm GaN HEMT。通过引入AlGaN背势垒,MOCVD淀积在3英寸SiC衬底上的AlGaN/GaN异质结材料缓冲层的击穿电压获得了大幅度的提升,相比于普通GaN缓冲层和掺Fe GaN缓冲层击穿电压提升幅度分别为4倍和2倍。采用具有AlGaN背势垒AlGaN/GaN 外延材料研制的GaN HEMT开关管在源漏间距为2μm、2.5μm、3μm、3.5μm和4μm时,估算得到的关态功率承受能力分别为25.0W、46.2W、64.0W、79.2W和88.4W。基于源漏间距为2.5μm的GaN HEMT开关管设计了DC-12GHz的单刀双掷MMIC开关。该开关采用了反射式串-并-并结构,整个带内插入损耗最大1.0dB、隔离度最小30dB,10GHz下连续波测试得到其功率承受能力达44.1dBm。